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China factory - Shenzhen Hongxinwei Technology Co., Ltd

Shenzhen Hongxinwei Technology Co., Ltd

  • China,Shenzhen ,Guangdong
  • Site Member

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China AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT
China AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

  1. China AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT
  2. China AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

  1. MOQ: 10PCS
  2. Price: NEGOTIABLE
  3. Get Latest Price
Payment Terms T/T, Western Union
Supply Ability 10000PCS/WEEK
Delivery Time 2-3DAYS
Packaging Details 400PCS/BOX TUBE
Product Category IGBT Transistors
Technology Si
Mounting Style Through Hole
Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.47 V
Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 141 A
Pd - Power Dissipation 543 W
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Height 20.7 mm
Length 15.87 mm
Width 5.31 mm
Factory packaging quantity 400PCS/BOX
Brand Name Infineon
Model Number AUIRG4PH50S
Certification ROHS
Place of Origin TAIWAN

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union Supply Ability 10000PCS/WEEK
Delivery Time 2-3DAYS Packaging Details 400PCS/BOX TUBE
Product Category IGBT Transistors Technology Si
Mounting Style Through Hole Configuration Single
Collector- Emitter Voltage VCEO Max 1.2 kV Collector-Emitter Saturation Voltage 1.47 V
Maximum Gate Emitter Voltage - 20 V, + 20 V Continuous Collector Current at 25 C 141 A
Pd - Power Dissipation 543 W Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Height 20.7 mm
Length 15.87 mm Width 5.31 mm
Factory packaging quantity 400PCS/BOX Brand Name Infineon
Model Number AUIRG4PH50S Certification ROHS
Place of Origin TAIWAN

  AUIRG4PH50S Infineon IGBT Transistors 1200V DC-1 KHZ (STD) DISCRETE AUTO IGBT

 

1.FEATURES

Standard: Optimized for minimum saturation
voltage and low operating frequencies (< 1kHz)
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
• Industry standard TO-247AC package
• Lead-Free
• Automotive Qualified *

2.BENEFITS

Generation 4 IGBT's offer highest efficiency available

IGBT's optimized for specified application conditions

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Importer

  • Year Established:

    1998

  • Total Annual:

    50000000-70000000

  • Employee Number:

    100~200

  • Ecer Certification:

    Site Member

Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t... Shenzhen Hongxinwei Technology Co., Ltd is located in the Bao’an District of Shenzhen.It is a high-tech enterprise setting research and development, production, sales into an integration. The company covers an area of 15 acres, having modern producing workshop and professional production and t...

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  • Shenzhen Hongxinwei Technology Co., Ltd
  • 3418, Duhuixuan, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
  • https://www.igbt-powermodule.com/

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