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HongKong Wei Ya Hua Electronic Technology Co.,Limited
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{"title":"IXYX110N120B4 Trench Field Stop IGBT 1200V 340A 1360W Through Hole","imgUrl":"https:\/\/img.silkroadsl.com\/nimg\/d5\/eb\/f98c50e14618807261879c893194-200x200-1\/ixyx110n120b4_trench_field_stop_igbt_1200v_340a_1360w_through_hole.jpg","attrs":{"Brand Name":"IXYS","Model Number":"IXYX110N120B4","Minimum Order Quantity":"50pcs","Price":"Negotiable"}}
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{"title":"IKWH50N65WR6XKSA1 Insulated Gate Bipolar Transistor 650V For Home Appliances","imgUrl":"https:\/\/img.silkroadsl.com\/nimg\/48\/38\/644098ae09ff57cbe6be3d724bfc-200x200-1\/ikwh50n65wr6xksa1_insulated_gate_bipolar_transistor_650v_for_home_appliances.jpg","attrs":{"Brand Name":"Infineon Technologies","Model Number":"IKWH50N65WR6XKSA1","Minimum Order Quantity":"50pcs","Price":"Negotiable"}}
IXYS IXBx14N300HV Reverse Conducting BiMOSFET™ IGBTs combine the strengths of MOSFETs and IGBTs. These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both its saturation voltage and the forward voltage drop of its intrinsic diode. The "Free" intrinsic body diodes of the IXBx14N300HV BiMOSFET IGBTs serve as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.
Using the IXBx14N300HV BiMOSFET IGBTs, power designers can eliminate multiple series-parallel lower voltage, lower current rated devices, thereby reducing the number of power components required and simplifying associated gate drive circuitry. This feature results in a much simpler system design with a lower cost and improved reliability.
The IXYS IXBx14N300HV BiMOSFET™ IGBTs are available in TO-263HV (IXBA14N300HV) and TO-268HV (IXBT14N300HV) packages. These devices feature a -55°C to +150°C junction temperature range.
FEATURES
"Free" intrinsic body diode
Saves space by eliminating multiple series-parallel lower voltage, lower current rated devices
High power density
High-frequency operation
Low conduction losses
MOS gate turn on for drive simplicity
4000V electrical isolation
Low gate drive requirements
APPLICATIONS
Switch-mode and resonant-mode power supplies
Uninterruptible power supplies (UPS)
Laser generators
Capacitor discharge circuits
AC switches
SPECIFICATIONS
3000V collector-emitter voltage (VCES)
3000V collector-gate voltage (VCGR)
±20V gate-emitter voltage (VGES)
±38A collector current at +25°C (IC25)
±100nA gate leakage current (IGES)
±14A collector current at +110°C (IC110)
2.7V collector-emitter saturation voltage (VCE(sat))
10μs short-circuit-withstand time (tsc)
200W collector power dissipation (PC)
-55°C to +150°C junction temperature range
PIN DESIGNATIONS & SCHEMATIC
TO-263HV PACKAGE OUTLINE
TO-268HV PACKAGE OUTLINE
Company Details
Bronze Gleitlager
,
Bronze Sleeve Bushings
and
Graphite Plugged Bushings
from Quality China Factory
Business Type:
Distributor/Wholesaler
Year Established:
2019
Total Annual:
3000000-5000000
Employee Number:
10~50
Ecer Certification:
Verified Supplier
HongKong Wei Ya Hua Electronic Technology Co.,Limited is a professional electronic components distributor for Bom list,hard find parts,long lead time providing solve solution. We can help you reduce your project costs. In addition,we have two warehouses in both Shenzhen and HongKong so you can get y... HongKong Wei Ya Hua Electronic Technology Co.,Limited is a professional electronic components distributor for Bom list,hard find parts,long lead time providing solve solution. We can help you reduce your project costs. In addition,we have two warehouses in both Shenzhen and HongKong so you can get y...