Payment Terms | T/T, Western Union , ESCROW |
Supply Ability | 50000PCS |
Delivery Time | STOCK |
Packaging Details | TUBE |
Categories | Transistors - FETs, MOSFETs - Single |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 59A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Power Dissipation (Max) | 200W (Tc) |
Brand Name | IR |
Model Number | IRFP064N |
Place of Origin | CHINA |
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Product Specification
Payment Terms | T/T, Western Union , ESCROW | Supply Ability | 50000PCS |
Delivery Time | STOCK | Packaging Details | TUBE |
Categories | Transistors - FETs, MOSFETs - Single | Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 59A, 10V | Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V | Power Dissipation (Max) | 200W (Tc) |
Brand Name | IR | Model Number | IRFP064N |
Place of Origin | CHINA | ||
High Light | surface mount schottky diode ,low power zener diode |
IRFP064N General Purpose Rectifier Diode N-Channel 55V 110A (Tc) 200W (Tc) Through Hole
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-247 contribute to its wide acceptance throughout the industry.
Product Attributes | Select All |
Categories | Discrete Semiconductor Products |
Transistors - FETs, MOSFETs - Single | |
Manufacturer | Infineon Technologies |
Series | HEXFET® |
Packaging | Tube |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 59A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 170nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 200W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-0755-82539981
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Exporter,Trading Company
Year Established:
2005
Total Annual:
100000 -500000
Employee Number:
5~10
Ecer Certification:
Active Member
DELI ELECTRONICS TECHNOLOGY CO.,LTD was founded in 2005. DELI has developed into a comprehensive supply chain of electronic components.The main business line of the company include Integrated circuit,Thyristor,diodes,transistors,capacitors,relaysconnectors,switches, led,sensor,in... DELI ELECTRONICS TECHNOLOGY CO.,LTD was founded in 2005. DELI has developed into a comprehensive supply chain of electronic components.The main business line of the company include Integrated circuit,Thyristor,diodes,transistors,capacitors,relaysconnectors,switches, led,sensor,in...
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