Payment Terms | T/T, Western Union , ESCROW |
Supply Ability | 30000PCS |
Delivery Time | STOCK |
Packaging Details | 3000PCS/REEL |
Categories | Transistors - FETs, MOSFETs - Single |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 160mA, 10V |
Vgs(th) (Max) @ Id | 1V @ 1mA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 48V |
Brand Name | NXP |
Model Number | BSH201 |
Place of Origin | CHINA |
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Product Specification
Payment Terms | T/T, Western Union , ESCROW | Supply Ability | 30000PCS |
Delivery Time | STOCK | Packaging Details | 3000PCS/REEL |
Categories | Transistors - FETs, MOSFETs - Single | Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 160mA, 10V | Vgs(th) (Max) @ Id | 1V @ 1mA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 3nC @ 10V | Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 48V |
Brand Name | NXP | Model Number | BSH201 |
Place of Origin | CHINA | ||
High Light | resistor equipped transistor ,epitaxial planar pnp transistor |
BSH201 NPN PNP Transistors P-Channel 60V 300mA (Ta) 417mW (Ta) Surface Mount
P-channel enhancement mode BSH201 MOS transistor
FEATURES SYMBOL QUICK REFERENCE DATA • Low threshold voltage VDS = -60 V • Fast switching • Logic level compatible ID = -0.3 A • Subminiature surface mount package RDS(ON) ≤ 2.5 Ω (VGS = -10 V)
GENERAL DESCRIPTION PINNING SOT23
P-channel, enhancement mode, PIN DESCRIPTION logic level, field-effect power transistor. This device has low 1 gate threshold voltage and extremely fast switching making it ideal for 2 source battery powered applications and high speed digital interfacing. 3 drain
The BSH201 is supplied in the SOT23 subminiature surface mounting package.
Product Attributes | Select All |
Categories | Discrete Semiconductor Products |
Transistors - FETs, MOSFETs - Single | |
Manufacturer | Nexperia USA Inc. |
Series | - |
Packaging | Tape & Reel (TR) |
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 2.5 Ohm @ 160mA, 10V |
Vgs(th) (Max) @ Id | 1V @ 1mA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 3nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 70pF @ 48V |
FET Feature | - |
Power Dissipation (Max) | 417mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-236AB |
Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-0755-82539981
Company Details
Business Type:
Manufacturer,Distributor/Wholesaler,Agent,Exporter,Trading Company
Year Established:
2005
Total Annual:
100000 -500000
Employee Number:
5~10
Ecer Certification:
Active Member
DELI ELECTRONICS TECHNOLOGY CO.,LTD was founded in 2005. DELI has developed into a comprehensive supply chain of electronic components.The main business line of the company include Integrated circuit,Thyristor,diodes,transistors,capacitors,relaysconnectors,switches, led,sensor,in... DELI ELECTRONICS TECHNOLOGY CO.,LTD was founded in 2005. DELI has developed into a comprehensive supply chain of electronic components.The main business line of the company include Integrated circuit,Thyristor,diodes,transistors,capacitors,relaysconnectors,switches, led,sensor,in...
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