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DELI ELECTRONICS TECHNOLOGY CO.,LTD

  • China,Shenzhen ,Guangdong
  • Active Member

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China CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet
China CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet

  1. China CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet
  2. China CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet

CJ2310 S10 Plastic Encapsulate Dual Gate Mosfet , High Power N Channel Mosfet

  1. MOQ: 3000 PCS
  2. Price: Negotiation
  3. Get Latest Price
Payment Terms T/T, Western Union , ESCROW
Supply Ability 30000PCS
Delivery Time STOCK
Packaging Details 3000PCS/REEL
Drain-Source Voltage 60V
Gate-Source Voltage ±20V
Continuous Drain Current 3A
Pulsed Drain Current (note 1) 10A
Power Dissipation 0.35W
Thermal Resistance from Junction to Ambient (note 2) 357℃/W
Junction Temperature 150℃
Storage Temperature -55~+150℃
Brand Name CJ
Model Number CJ2310 S10
Place of Origin CHINA

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T, Western Union , ESCROW Supply Ability 30000PCS
Delivery Time STOCK Packaging Details 3000PCS/REEL
Drain-Source Voltage 60V Gate-Source Voltage ±20V
Continuous Drain Current 3A Pulsed Drain Current (note 1) 10A
Power Dissipation 0.35W Thermal Resistance from Junction to Ambient (note 2) 357℃/W
Junction Temperature 150℃ Storage Temperature -55~+150℃
Brand Name CJ Model Number CJ2310 S10
Place of Origin CHINA
High Light resistor equipped transistorepitaxial planar pnp transistor

CJ2310 S10 NPN PNP Transistors N-Channel MOSFET Plastic-Encapsulate MOSFETS

 

 

DESCRIPTION

 

The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application.

FEATURE

 

High power and current handing capability 

Lead free product is acquired 

Surface mount package

 

APPLICATION

 

Battery Switch 

DC/DC Converter

 

 

Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Symbol Value Unit
Drain-Source Voltage VDS 60 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID 3 A
Pulsed Drain Current (note 1) I DM 10 A
Power Dissipation PD 0.35 W
Thermal Resistance from Junction to Ambient (note 2) R θJA 357 ℃/W
Junction Temperature TJ 150 ℃
Storage Temperature TSTG -55~+150 ℃

 

 

 

 

 

 

 

 

Deli electronics tehcnology co ltd
www.icmemorychip.com

Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-0755-82539981

Company Details

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  • Business Type:

    Manufacturer,Distributor/Wholesaler,Agent,Exporter,Trading Company

  • Year Established:

    2005

  • Total Annual:

    100000 -500000

  • Employee Number:

    5~10

  • Ecer Certification:

    Active Member

DELI ELECTRONICS TECHNOLOGY CO.,LTD was founded in 2005.   DELI has developed into a comprehensive supply chain of electronic components.The main business line of the company include Integrated circuit,Thyristor,diodes,transistors,capacitors,relaysconnectors,switches, led,sensor,in... DELI ELECTRONICS TECHNOLOGY CO.,LTD was founded in 2005.   DELI has developed into a comprehensive supply chain of electronic components.The main business line of the company include Integrated circuit,Thyristor,diodes,transistors,capacitors,relaysconnectors,switches, led,sensor,in...

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  • Reach Us
  • DELI ELECTRONICS TECHNOLOGY CO.,LTD
  • RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA
  • http://www.icmemorychip.com/

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