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HK LIANYIXIN INDUSTRIAL CO., LIMITED

  • China,Shenzhen
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China IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor
China IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor

  1. China IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor

IPD082N10N3 TO-252 Ic Integrated Circuit N Channel Mosfet Transistor

  1. MOQ: 1pcs
  2. Price: Negotiate
  3. Get Latest Price
Payment Terms D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability 57830pcs
Delivery Time 3
Packaging Details 4000
Stock 8000+
quality: Brand new unused
Package / box: TO-252
Brand Name INFINEON
Model Number IPD082N10N3
Place of Origin original

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms D/A, L/C, D/A, D/P, T/T, Western Union, MoneyGram Supply Ability 57830pcs
Delivery Time 3 Packaging Details 4000
Stock 8000+ quality: Brand new unused
Package / box: TO-252 Brand Name INFINEON
Model Number IPD082N10N3 Place of Origin original
High Light IPD082N10N3 Ic Integrated CircuitIc Integrated CircuitIPD082N10N3 Integrated Circuit Ic Chip

 

ISO9001.pdf

IPD082N10N3 is an N channel MOSFET transistor. The following are its applications, conclusions, and parameters:
Application:
Used as a high-voltage and high-power load switch
Used as a switch for converters and regulators
Conclusion:
High voltage capability: Vds=100V
Low conduction resistance: Rds (on)=8.2m Ω (typ.)
Fast switching speed: td (on)=16ns (typ.), td (off)=60ns (typ.)
High temperature performance: can operate at temperatures up to 175 ℃
Complies with RoHS directives and lead-free requirements
Parameters:
Vds (drain source voltage): 100V
Vgs (gate source voltage): ± 20V
Id (drain current): 80A
Rds (on) (conduction resistance): 8.2m Ω (typ.)
Qg (gate charge): 135nC (typ.)
Td (on) (start delay time): 16ns (typ.)
Td (off) (shutdown delay time): 60ns (typ.)
Tj (junction temperature): 175 ℃
Complies with RoHS directives and lead-free requirements.

Product Technical Specifications  
   
EU RoHS Compliant with Exemption聽
ECCN (US) EAR99
Part Status Unconfirmed
SVHC Yes
SVHC Exceeds Threshold Yes
Automotive Unknown
PPAP Unknown
Product Category Power MOSFET
Configuration Single
Process Technology OptiMOS 3
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) 卤20
Maximum Gate Threshold Voltage (V) 3.5
Maximum Continuous Drain Current (A) 80
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (mOhm) 8.2@10V
Typical Gate Charge @ Vgs (nC) 42@10V
Typical Gate Charge @ 10V (nC) 42
Typical Input Capacitance @ Vds (pF) 2990@50V
Maximum Power Dissipation (mW) 125000
Typical Fall Time (ns) 8
Typical Rise Time (ns) 42
Typical Turn-Off Delay Time (ns) 31
Typical Turn-On Delay Time (ns) 18
Minimum Operating Temperature (掳C) -55
Maximum Operating Temperature (掳C) 175
Packaging Tape and Reel
Mounting Surface Mount
Package Height 2.41(Max)
Package Width 6.22(Max)
Package Length 6.73(Max)
PCB changed 2
Tab Tab
Standard Package Name TO-252
Supplier Package DPAK
Pin Count 3
Lead Shape Gull-wing

Company Details

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2016

  • Total Annual:

    6000000-1200000

  • Employee Number:

    100~200

  • Ecer Certification:

    Verified Supplier

HK LIANYIXIN INDUSTRIAL CO., LIMITED is a professional component supplier, mainly acting as an agent for large European and American ASIC manufacturers. Since its establishment, LIANYIXIN has always been concerned about the development and impact of the global semiconductor industry on the global hi... HK LIANYIXIN INDUSTRIAL CO., LIMITED is a professional component supplier, mainly acting as an agent for large European and American ASIC manufacturers. Since its establishment, LIANYIXIN has always been concerned about the development and impact of the global semiconductor industry on the global hi...

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  • HK LIANYIXIN INDUSTRIAL CO., LIMITED
  • 2515 century huiduhuixuan, No. 3078, Shennan Middle Road, Huaqiangbei street, Futian District, Shenzhen, China
  • https://www.ic-integratedcircuit.com/

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