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China factory - Hi-Tech Optoelectronics Co., Ltd

Hi-Tech Optoelectronics Co., Ltd

  • China,Beijing ,Beijing
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China 808nm 100W QCW Unmounted Laser Diode Bar Direct Material Processing Diode Laser
China 808nm 100W QCW Unmounted Laser Diode Bar Direct Material Processing Diode Laser

  1. China 808nm 100W QCW Unmounted Laser Diode Bar Direct Material Processing Diode Laser

808nm 100W QCW Unmounted Laser Diode Bar Direct Material Processing Diode Laser

  1. MOQ: 50 pcs
  2. Price: Negotiable
  3. Get Latest Price
Payment Terms T/T
Supply Ability 100 pcs per month
Delivery Time 15-25 working days
Packaging Details Paper Box
Operation Mode QCW
Output Power 100 watt
Center Wavelength 808±5 nm
Fill Factor 87%
Number of Unmounted Single Emitters 100
Brand Name HTOE
Model Number LDAQ1-0808-0100
Place of Origin Beijing, China

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability 100 pcs per month
Delivery Time 15-25 working days Packaging Details Paper Box
Operation Mode QCW Output Power 100 watt
Center Wavelength 808±5 nm Fill Factor 87%
Number of Unmounted Single Emitters 100 Brand Name HTOE
Model Number LDAQ1-0808-0100 Place of Origin Beijing, China
High Light coherent 40w 808nm laser diode barhigh power packaged laser bar

100 watt High Power Laser Diode Bar , 808 nm QCW Laser Diode Unmounted Bar

Semiconductor lasers are the centerpiece of most of today’s industrial laser systems. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.

HTOE has been focusing on the semiconductor wafer technology from 1998, delivers the multimode high power at wavelengths between 635 and 1064nm.

  • High Power multimode unmounted bars up to 40W CW and 200W QCW output
  • Unmounted single emitters up to 2W CW Power
  • Available wavelengths include 635nm, 650nm, 808nm, 980nm and 1064nm

Parameters(25℃)

Parameter Unit LDAQ1-0808-0100
Optical Parameter Operation Mode - QCW
Output Power Po W 100
Center Wavelength λc nm 808 ± 5
Geometrical Fill Factor - 87%
Number of Unmounted Single Emitters - 100
Electrical Parameter Slope Efficiency Es W/A ≥1.2
Threshold Current Ith A ≤20
Operating Current If A ≤100
Operating Voltage Vf V ≤3
 

 

Notice

1. Item notice: LDAQ1( item model)-****( center wavelength)-****( output power).

2. Data sheet is based on the result of testing under 25℃,pulse width 200μs, frequency 1-100Hz, maximum duty cycle 2%, and typical application 0.4%.

3. Data sheet is based on the CS package testing.

4. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.

 

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer

  • Year Established:

    1998

  • Total Annual:

    3500000-4500000

  • Employee Number:

    100~200

  • Ecer Certification:

    Active Member

Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital:227 million RMB Located in Shahe Industrial Park, Beijing Employees... Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital:227 million RMB Located in Shahe Industrial Park, Beijing Employees...

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  • Hi-Tech Optoelectronics Co., Ltd
  • Shahe Industrial Park, Changping District, Beijing, China
  • http://www.htoelaserdiode.com/

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