Hi-Tech Optoelectronics Co., Ltd
| Payment Terms | T/T |
| Supply Ability | 1000 pcs per month |
| Delivery Time | 10-20 working days |
| Packaging Details | Paper Box |
| Output power | 300 mWatt |
| Lasing Wavelength | 650±10 nm |
| Operating Current | ≤1 A |
| Operating Voltage | ≤2.3 V |
| Package | C-Mount/TOØ3 |
| Threshold Current | ≤0.65 A |
| Brand Name | HTOE |
| Model Number | LDM-0650-300m-*3 |
| Place of Origin | Beijing, China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 1000 pcs per month |
| Delivery Time | 10-20 working days | Packaging Details | Paper Box |
| Output power | 300 mWatt | Lasing Wavelength | 650±10 nm |
| Operating Current | ≤1 A | Operating Voltage | ≤2.3 V |
| Package | C-Mount/TOØ3 | Threshold Current | ≤0.65 A |
| Brand Name | HTOE | Model Number | LDM-0650-300m-*3 |
| Place of Origin | Beijing, China | ||
| High Light | single emitter laser diode ，single longitudinal mode laser diode | ||
650nm wavelength Packaged Single Emitter Diode Laser for Illumination
LDM-0650-300m-*3 belongs to HTOE LDM series packaged single emitter diode lasers. Based on Quantum-well epitaxy and ridge waveguide structure design, HTOE LDM series packaged single emitter diodes are Fabry-Perot cavity semiconductor lasers. LDM series packaged single emitters provide excellent reliability and performance. Standard options are 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 915nm, 940nm, 980nm and 1064 nm packaged on TO mounts, CoS mounts, C-mounts and F-mounts. Moreover, LDM series packaged single emitters provide beam shaping services like fast-axis compression according to customer demands.
Features
Applications
Parameters(20℃)
| C-Mount/ TOØ3 Packaged Single Emitter | |||||
|---|---|---|---|---|---|
| Item | Parameter | Unit | LDM-0650-300m-*3 | ||
| Min. | Typical | Max. | |||
| Optical Parameter | Output power | mW | - | 300 | - |
| Lasing Wavelength | nm | 640 | 650 | 660 | |
| Spectral Width | nm | - | 1.0 | 2.0 | |
| Emitting Area width | µm | - | 100 | - | |
| Temperature Coefficient | nm/℃ | - | 0.30 | - | |
| Fast Axis Divergence | deg | - | 34 | 38 | |
| Slow Axis Divergence | deg | - | 7 | 10 | |
| Electrical Parameter | Slope Efficiency | W/A | 0.90 | - | - |
| Threshold Current | A | - | 0.45 | 0.65 | |
| Operating Current | A | - | 0.7 | 1.00 | |
| Operating Voltage | V | - | 2.00 | 2.30 | |
| Others | Package | - | C-Mount/TOØ3 | ||
| Operating Temperature | ℃ | 10 ~ 30 | |||
| Storage Temperature | ℃ | -10 ~ 60 | |||
Package Information
C-Mount Package
TOØ3 Package
Function Curve
P-I-V Curve Spectral Curve
Notice
ESD precautions must be taken when handling unit.
A dry environment should be provided when storing or operating a device with an open diode laser facet at temperatures below the ambient dew point. Failure to do so will cause condensation on the unit and can destroy it.
ESD Cautions
The primary cause of diode failure is unexpected electrostatic discharge. To help prevent device failures, be sure to handle devices with extreme care. Users should always wear an ESD wrist strap, ground all applicable work surfaces and follow anti-static techniques when handling diode lasers.
Company Details
Business Type:
Manufacturer
Year Established:
1998
Total Annual:
3500000-4500000
Employee Number:
100~200
Ecer Certification：
Active Member
Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital：227 million RMB Located in Shahe Industrial Park, Beijing Employees... Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital：227 million RMB Located in Shahe Industrial Park, Beijing Employees...
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