Payment Terms | T/T |
Supply Ability | 1000 pcs per month |
Delivery Time | 10-20 working days |
Packaging Details | Paper Box |
Output power | 3 Watt |
Lasing Wavelength | 808±5 nm |
Operating Current | ≤3.3 A |
Operating Voltage | ≤2.0 V |
Package | CoS/F-Mount/C-Mount |
Welding Temperature | ≤260 ℃ |
Brand Name | HTOE |
Model Number | LDM-0808-003W-*3 |
Place of Origin | Beijing, China |
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Product Specification
Payment Terms | T/T | Supply Ability | 1000 pcs per month |
Delivery Time | 10-20 working days | Packaging Details | Paper Box |
Output power | 3 Watt | Lasing Wavelength | 808±5 nm |
Operating Current | ≤3.3 A | Operating Voltage | ≤2.0 V |
Package | CoS/F-Mount/C-Mount | Welding Temperature | ≤260 ℃ |
Brand Name | HTOE | Model Number | LDM-0808-003W-*3 |
Place of Origin | Beijing, China | ||
High Light | single emitter laser diode ,single longitudinal mode laser diode |
808nm wavelength Single Emitter Diode Laser for Pumping and Medical Application
Packaged single emitter diode laser is a semiconductor device similar to a light-emitting diode in which the laser beam is created at the diode's junction. Driven by voltage, laser diodes can directly convert electrical energy into light. With three package design options, LDM-0808-003W-*3 is easy to mount and provides good thermal contact, making it an ideal choice for high power and OEM applications.
LDM-0808-003W-*3 is one type of HTOE LDM series packaged single emitters, which are Fabry-Perot cavity semiconductor lasers based on Quantum-well epitaxy and ridge waveguide structure design. Standard options are 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 915nm, 940nm, 980nm and 1064 nm center wavelength single emitters packaged on TO mounts, CoS mounts, C-mounts and F-mounts. HTOE packaged single emitter diodes provide superior reliability and performance by providing beam shaping services like fast-axis compression according to customer demands.
Features
High reliablity
High electro-optical effiency
Parameters (20℃)
CoS/F-Mount/C-Mount Packaged Single Emitter | |||
Parameter | Unit | LDM-0808-003W-*3 | |
Optical Parameter | Output power | W | 3 |
Lasing Wavelength | nm | 808±5 | |
Spectral Width | nm | ≤3 | |
Emitting Area width | µm | 100 | |
Temperature Coefficient | nm/℃ | 0.3 | |
Fast Axis Divergence | deg | <40 | |
Slow Axis Divergence | deg | <10 | |
Electrical Parameter | Slope Efficiency | W/A | ≥1.00 |
Threshold Current | A | ≤0.70 | |
Operating Current | A | ≤3.30 | |
Operating Voltage | V | ≤2.00 | |
Others | Package | - | CoS/F-Mount/C-Mount |
Operating Temperature | ℃ | 10 ~ 30 | |
Storage Temperature | ℃ | -40 ~ 60 | |
Welding Temperature | ℃ | ≤260 |
CoS Package
F-Mount
C-Mount
Function Curve
P-I-V Curve Spectral Curve
Notice
ESD precautions must be taken when handling unit.
A dry environment should be provided when storing or operating a device with an open diode laser facet at temperatures below the ambient dew point. Failure to do so will cause condensation on the unit and can destroy it.
ESD Cautions
The primary cause of diode failure is unexpected electrostatic discharge. To help prevent device failures, be sure to handle devices with extreme care. Users should always wear an ESD wrist strap, ground all applicable work surfaces and follow anti-static techniques when handling diode lasers.
Company Details
Business Type:
Manufacturer
Year Established:
1998
Total Annual:
3500000-4500000
Employee Number:
100~200
Ecer Certification:
Active Member
Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital:227 million RMB Located in Shahe Industrial Park, Beijing Employees... Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital:227 million RMB Located in Shahe Industrial Park, Beijing Employees...
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