Hi-Tech Optoelectronics Co., Ltd
| Payment Terms | T/T |
| Supply Ability | 1000 pcs per month |
| Delivery Time | 10-20 working days |
| Packaging Details | Paper Box |
| Output power | 300 mWatt |
| Lasing Wavelength | 670±10 nm |
| Operating Current | ≤1 A |
| Operating Voltage | ≤2.3 V |
| Package | C-Mount/TOØ3 |
| Threshold Current | ≤0.6 A |
| Brand Name | HTOE |
| Model Number | LDM-0670-300m-*3 |
| Place of Origin | Beijing, China |
View Detail Information
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Product Specification
| Payment Terms | T/T | Supply Ability | 1000 pcs per month |
| Delivery Time | 10-20 working days | Packaging Details | Paper Box |
| Output power | 300 mWatt | Lasing Wavelength | 670±10 nm |
| Operating Current | ≤1 A | Operating Voltage | ≤2.3 V |
| Package | C-Mount/TOØ3 | Threshold Current | ≤0.6 A |
| Brand Name | HTOE | Model Number | LDM-0670-300m-*3 |
| Place of Origin | Beijing, China | ||
| High Light | c mount laser diode ，single longitudinal mode laser diode | ||
300mW Output Power 670nm Wavelength Packaged Single Emitter Diode Laser
As one of HTOE LDM series packaged single emitters, LDM-0670-300m-*3 is Fabry-Perot cavity semiconductor laser diode based on Quantum-well epitaxy and ridge waveguide structure design. HTOE packaged single emitters provide excellent reliability and performance. Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm. Package designs include TO mounts, CoS mounts, C-mounts and F-mounts. Provide beam shaping services like fast-axis compression according to customer demands
A laser diode is electrically a PIN diode. The active region of the laser diode is in the intrinsic (I) region, and the carriers (electrons and holes) are pumped into that region from the N and P regions respectively. While initial diode laser research was conducted on simple P-N diodes, all modern lasers use the double-hetero-structure implementation, where the carriers and the photons are confined in order to maximize their chances for recombination and light generation.
Features
Parameters(20℃)
| C-Mount/ TOØ3 Packaged Single Emitter | |||||
|---|---|---|---|---|---|
| Item | Parameter | Unit | LDM-0670-300m-*3 | ||
| Min. | Typical | Max. | |||
| Optical Parameter | Output power | mW | - | 300 | - |
| Lasing Wavelength | nm | 660 | 670 | 680 | |
| Spectral Width | nm | - | 1.0 | 2.0 | |
| Emitting Area width | µm | - | 100 | - | |
| Temperature Coefficient | nm/℃ | - | 0.30 | - | |
| Fast Axis Divergence | deg | - | 34 | 38 | |
| Slow Axis Divergence | deg | - | 7 | 10 | |
| Electrical Parameter | Slope Efficiency | W/A | 0.90 | - | - |
| Threshold Current | A | - | 0.50 | 0.60 | |
| Operating Current | A | - | 0.80 | 1.00 | |
| Operating Voltage | V | - | 2.00 | 2.30 | |
| Others | Package | - | C-Mount/TOØ3 | ||
| Operating Temperature | ℃ | 10 ~ 30 | |||
| Storage Temperature | ℃ | -10 ~ 60 | |||
Package Information
C-Mount Package
TOØ3 Package
Function Curve
P-I-V Curve Spectral Curve
Notice
Please store or use the LD under dry and air flow ambient.To avoid any situation of condensation which will damage the LD.
Working under high temperature will increase the threshold current and decrease the efficiency conversion,speed up the aging of the LD.
The exceed power output will speed up the aging of the LD.
Company Details
Business Type:
Manufacturer
Year Established:
1998
Total Annual:
3500000-4500000
Employee Number:
100~200
Ecer Certification：
Active Member
Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital：227 million RMB Located in Shahe Industrial Park, Beijing Employees... Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital：227 million RMB Located in Shahe Industrial Park, Beijing Employees...
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