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China factory - Hi-Tech Optoelectronics Co., Ltd

Hi-Tech Optoelectronics Co., Ltd

  • China,Beijing ,Beijing
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China 808nm Wavelength 500mW output power Bare Laser Diode Chip
China 808nm Wavelength 500mW output power Bare Laser Diode Chip

  1. China 808nm Wavelength 500mW output power Bare Laser Diode Chip

808nm Wavelength 500mW output power Bare Laser Diode Chip

  1. MOQ: 100 pcs
  2. Price: Negotiable
  3. Get Latest Price
Payment Terms T/T
Supply Ability 1000 pcs per month
Delivery Time 15-30 working days
Packaging Details Paper box
Output Power 500 mW
Center Wavelength 808±5 nm
Emitter Width 50 μm
Cavity Length 600 μm
Width 500 μm
Operating Current ≤ 0.6 A
Brand Name HTOE
Model Number CLDM-0808-0500-02
Place of Origin Beijing, China

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability 1000 pcs per month
Delivery Time 15-30 working days Packaging Details Paper box
Output Power 500 mW Center Wavelength 808±5 nm
Emitter Width 50 μm Cavity Length 600 μm
Width 500 μm Operating Current ≤ 0.6 A
Brand Name HTOE Model Number CLDM-0808-0500-02
Place of Origin Beijing, China
High Light semiconductor laser diodemultimode laser diode

500m watt , 808 nm Unmounted Single Emitter , Unmounted Laser Diode

Semiconductor lasers are the centerpiece of most of today’s industrial laser systems. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.

HTOE has been focusing on the semiconductor wafer technology since 1998, delivers the multimode high power at wavelengths between 635 and 1064nm.

  • High Power multimode unmounted bars up to 40W CW and 200W QCW output;
  • Unmounted single emitters up to 2W CW Power;
  • Available wavelengths include 635nm, 650nm, 808nm, 980nm and 1064nm.

Parameters(25℃)

Parameter Unit CLDM-0808-0500-02
Optical Parameter Output Power Po mW 500
Center Wavelength λc nm 808 ± 5
Beam Divergence θ×θ deg 38x10
COD W ≥ 1.00
Geometrical Emitter Width μm 50
Width μm 500
Cavity Length μm 600
Electrical Parameter Slope Efficiency Es W/A ≥ 1.10
Threshold Current Ith A ≤ 0.12
Operating Current If A ≤ 0.6
Operating Voltage Vf V ≤ 1.9
 

Notice

1. Item notice: CLDM( item model)-0808( center wavelength)-0500( output power)-02.

2. Data sheet is based on the result of testing under 25℃.

3. Data sheet is based on the C-Mount package testing.

4. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.

 

 

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

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 from Quality China Factory
  • Business Type:

    Manufacturer

  • Year Established:

    1998

  • Total Annual:

    3500000-4500000

  • Employee Number:

    100~200

  • Ecer Certification:

    Active Member

Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital:227 million RMB Located in Shahe Industrial Park, Beijing Employees... Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital:227 million RMB Located in Shahe Industrial Park, Beijing Employees...

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  • Hi-Tech Optoelectronics Co., Ltd
  • Shahe Industrial Park, Changping District, Beijing, China
  • http://www.htoelaserdiode.com/

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