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China factory - Hi-Tech Optoelectronics Co., Ltd

Hi-Tech Optoelectronics Co., Ltd

  • China,Beijing ,Beijing
  • Active Member

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China Infrared IR TO Can Laser Diode 808nm 450mW Output Power High Performance
China Infrared IR TO Can Laser Diode 808nm 450mW Output Power High Performance

  1. China Infrared IR TO Can Laser Diode 808nm 450mW Output Power High Performance

Infrared IR TO Can Laser Diode 808nm 450mW Output Power High Performance

  1. MOQ: 200 pcs
  2. Price: Negotiable
  3. Get Latest Price
Payment Terms T/T
Supply Ability 1000 pcs per month
Delivery Time 10-20 working days
Packaging Details Paper Box
Output power 450m Watt
Lasing Wavelength 808±4 nm
Operating Current ≤0.56 A
Operating Voltage ≤2.0 V
Package TOØ9
Operating Temperature 10 ~ 50 ℃
Brand Name HTOE
Model Number LDMA-0808-450m-A2
Place of Origin Beijing, China

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability 1000 pcs per month
Delivery Time 10-20 working days Packaging Details Paper Box
Output power 450m Watt Lasing Wavelength 808±4 nm
Operating Current ≤0.56 A Operating Voltage ≤2.0 V
Package TOØ9 Operating Temperature 10 ~ 50 ℃
Brand Name HTOE Model Number LDMA-0808-450m-A2
Place of Origin Beijing, China
High Light laser diode moduleto mount laser diode

808nm , 500mW output power, TO-9 Packaged Laser Diode with FAC

 

HTOE LDMA-0808-450m-A2 is a highly efficient semiconductor laser diode which provides emission wavelength of 808nm and standard light output of 450mW (CW). LDMA-0808-500m-A2 adopts a TO-9 package, while installes Fast Axis Collimation Lens. The shaped laser beam provides smaller divergency for fast axis. The colimated laser beam is more convenient for customers to design their own optical system. Featured and benefited a high reliable operating and a narrow emitting width 50µm, LDMA-0808-450m-A2 allows to operate with a high quality laser beam, It's ideal for pumping Nd:YAG and illumination applications.

 

LDMA-0808-450m-A2 belongs to HTOE's LDMA series, which based on Quantum-well epitaxy and ridge waveguide structure design. HTOE packaged single emitters provide excellent reliability and performance. Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm. Package designs include TO mounts, CoS mounts, C-mounts and F-mounts. Provide beam shaping services like fast-axis compression according to customer demands.
 

Features

  • 808nm center wavelength
  • 450mW output power
  • Standard TO-9 package
  • With FAC 
  • With photodiode
  • High electro-optical effiency
  • High reliablity

Applications

  • Laser Pumping
  • Medical
  • Illumination

 

Parameters(25℃)

TOØ9 Packaged Single Emitter
ItemParameterUnitLDMA-0808-450m-A2
Min.TypicalMax.
Optical ParameterOutput powermW 450-
Lasing Wavelengthnm804808812
Spectral Widthnm-1.02.0
Emitting Area widthµm-50-
Temperature Coefficientnm/℃-0.30-
Fast Axis Divergencedeg 8 
Slow Axis Divergencedeg-8 
Electrical ParameterSlope EfficiencyW/A1.00--
Threshold CurrentA-0.100.15
Operating CurrentA-0.500.56
Operating VoltageV-1.752.00
OthersPackage-TOØ9
Operating Temperature10 ~ 50
Storage Temperature-10 ~ 60
 
 

Package Information


 
TOØ9 Package
 
 
Function Curve




                           P-I-V Curve                                Spectral Curve
 
 
Notice
 
1. Item model notice: LDMA (Item model), **** (Center wavelength), **** (Output power), ** (Heat sink structure and item width).
2. Data in the sheet are all based on TOØ9 package testing.
3. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.
 
ESD Cautions
 
The primary cause of diode failure is unexpected electrostatic discharge. To help prevent device failures, be sure to handle devices with extreme care. Users should always wear an ESD wrist strap, ground all applicable work surfaces and follow anti-static techniques when handling diode lasers.
 
Operating Considerations
 
Operating the diode laser outside of its maximum ratings may present a safety hazard or cause a device failure. Additionally, excessive drive current or switching transients can damage CW diode lasers. DO NOT exceed the maximum peak optical power. Before turning the power supply on, connect the component to the power supply and ensure the output voltage value is zero. After the component has been successfully connected, increase the current slowly and monitor both the output power and drive current. Device degradation accelerates with increased temperature; therefore, careful attention to minimizing the case temperature is advised. A proper heat-sink for the diode laser on a thermal radiator will greatly enhance laser life.
























Company Details

Bronze Gleitlager

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 from Quality China Factory
  • Business Type:

    Manufacturer

  • Year Established:

    1998

  • Total Annual:

    3500000-4500000

  • Employee Number:

    100~200

  • Ecer Certification:

    Active Member

Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital:227 million RMB Located in Shahe Industrial Park, Beijing Employees... Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital:227 million RMB Located in Shahe Industrial Park, Beijing Employees...

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  • Hi-Tech Optoelectronics Co., Ltd
  • Shahe Industrial Park, Changping District, Beijing, China
  • http://www.htoelaserdiode.com/

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