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Hi-Tech Optoelectronics Co., Ltd

  • China,Beijing ,Beijing
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China Single Emitter TO Can Laser Diode Flat Cap Ridge Waveguide Structure Design
China Single Emitter TO Can Laser Diode Flat Cap Ridge Waveguide Structure Design

  1. China Single Emitter TO Can Laser Diode Flat Cap Ridge Waveguide Structure Design

Single Emitter TO Can Laser Diode Flat Cap Ridge Waveguide Structure Design

  1. MOQ: 200 pcs
  2. Price: Negotiable
  3. Get Latest Price
Payment Terms T/T
Supply Ability 1000 pcs per month
Delivery Time 10-20 working days
Packaging Details Paper Box
Output power 500m Watt
Lasing Wavelength 980±10 nm
Operating Current ≤ 0.7 A
Operating Voltage ≤ 2.0 V
Package TOØ9
Threshold Current ≤ 0.15 A
Brand Name HTOE
Model Number LDM-0980-500m-*2
Place of Origin Beijing, China

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability 1000 pcs per month
Delivery Time 10-20 working days Packaging Details Paper Box
Output power 500m Watt Lasing Wavelength 980±10 nm
Operating Current ≤ 0.7 A Operating Voltage ≤ 2.0 V
Package TOØ9 Threshold Current ≤ 0.15 A
Brand Name HTOE Model Number LDM-0980-500m-*2
Place of Origin Beijing, China
High Light to mount laser diodecollimated laser diode module

500m watt Single Emitter Diode Laser , 980 nm TO Package ( flat cap) Laser Diode

Single emitter diode laser is a semiconductor device similar to a light-emitting diode in which the laser beam is created at the diode's junction. Driven by voltage, laser diodes can directly convert electrical energy into light.

 

Type LDM-0980-500m-*2 packaged single emitters are Fabry-Perot cavity semiconductor lasers based on Quantum-well epitaxy and ridge waveguide structure design. 9mm in TO package with flat window, HTOE LDM-0980-500m-*2 packaged laser diode provide excellent reliability and performance.

 

Features

  • 980 nm Center wavelength 
  • TO mount Package design
  • Provide beam shaping services like fast-axis compression according to customer demands

Parameters(20℃)

TOØ9 Packaged Single Emitter
Item Parameter Unit LDM-0980-500m-*2
Min. Typical Max.
Electrical Parameter Output power mW - 500 -
Lasing Wavelength nm 970 980 990
Spectral Width nm - 1.2 2.5
Emitting Area width µm - 50 -
Temperature Coefficient nm/℃ - 0.30 -
Fast Axis Divergence deg - 34 38
Slow Axis Divergence deg - 7 10
Optical Parameter Slope Efficiency W/A 0.90 - -
Threshold Current A - 0.11 0.15
Operating Current A - 0.59 0.70
Operating Voltage V - 1.65 2.00
Others Package - TOØ9
Operating Temperature 10 ~ 50
Storage Temperature -10 ~ 60
 
 

Package Information

 

TOØ9 Package

 

Function Curve

                           P-I-V Curve                                Spectral Curve

 

Notice

  1. Item model notice: LDM (Item model), 0980 (Center wavelength), 500m (Output power), *2 (Heat sink structure and item width).
  2. Data in the sheet are all based on TOØ9 package testing.
  3. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.

Safety Advice

 

This type of laser diode is an industrial electronic component and used for Industrial application, testament, Lab, DIY.

Please keep the lens clean to make the laser beam clear and bright. Before carrying on some laser DIY activities, please read about the technical information first and protect your eyes before laser ray. Be sure the operator has experience in optics DIY or test.

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer

  • Year Established:

    1998

  • Total Annual:

    3500000-4500000

  • Employee Number:

    100~200

  • Ecer Certification:

    Active Member

Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital:227 million RMB Located in Shahe Industrial Park, Beijing Employees... Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital:227 million RMB Located in Shahe Industrial Park, Beijing Employees...

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  • Hi-Tech Optoelectronics Co., Ltd
  • Shahe Industrial Park, Changping District, Beijing, China
  • http://www.htoelaserdiode.com/

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