Hi-Tech Optoelectronics Co., Ltd
| Payment Terms | T/T |
| Supply Ability | 1000 pcs per month |
| Delivery Time | 15-30 working days |
| Packaging Details | Paper box |
| Output Power | 2 W |
| Center Wavelength | 808±5 nm |
| Emitter Width | 100/150 μm |
| Cavity Length | 1500/1000 μm |
| Width | 500 μm |
| Operating Current | ≤ 2.3 A |
| Brand Name | HTOE |
| Model Number | HTOE-E-500-0808-TE-002W-1000 |
| Place of Origin | Beijing, China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 1000 pcs per month |
| Delivery Time | 15-30 working days | Packaging Details | Paper box |
| Output Power | 2 W | Center Wavelength | 808±5 nm |
| Emitter Width | 100/150 μm | Cavity Length | 1500/1000 μm |
| Width | 500 μm | Operating Current | ≤ 2.3 A |
| Brand Name | HTOE | Model Number | HTOE-E-500-0808-TE-002W-1000 |
| Place of Origin | Beijing, China | ||
| High Light | semiconductor laser diode ，multimode laser diode | ||
2W Output Power 808nm Wavelength Unmounted Laser Diode Single Emitter
Semiconductor lasers are the centerpiece of most of today’s industrial laser systems. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.
HTOE has been focusing on the semiconductor wafer technology since 1998, delivers the multimode high power at wavelengths between 635 and 1064nm. HTOE-E-500-0808-TE-002W-1000 unmounted laser diode single emitter is an excellent choice for customers seeking state-of-art performance for laser development and customer applications. It outputs 2 watt (CW) power at 808nm center wavelength with narrow emitter width of 150 μm.
Features
Special Designed for cleaving into single emitters
Applications
Parameters(25℃)
| Parameter | Unit | HTOE-E-500-0808-TE-002W-1000 | |
|---|---|---|---|
| Optical Parameter | Output Power Po | mW | 2000 |
| Center Wavelength λc | nm | 808 ± 5 | |
| Beam Divergence θ⊥×θ∥ | deg | 38x10 | |
| COD | W | ≥ 4.00 | |
| Geometrical | Emitter Width | μm | 150 |
| Width | μm | 500 | |
| Cavity Length | μm | 1000 | |
| Electrical Parameter | Slope Efficiency Es | W/A | ≥ 1.15 |
| Threshold Current Ith | A | ≤ 0.6 | |
| Operating Current If | A | ≤ 2.3 | |
| Operating Voltage Vf | V | ≤ 2 | |
Notice
1. Item notice: HTOE-E-500(Width)-0808(center wavelength)-TE(polarization mode)-002W(output power)-1000(cavity length).
2. Data sheet is based on the result of testing under 25℃.
3. Data sheet is based on the C-Mount package testing.
4. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.
Company Details
Business Type:
Manufacturer
Year Established:
1998
Total Annual:
3500000-4500000
Employee Number:
100~200
Ecer Certification：
Active Member
Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital：227 million RMB Located in Shahe Industrial Park, Beijing Employees... Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital：227 million RMB Located in Shahe Industrial Park, Beijing Employees...
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