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Hi-Tech Optoelectronics Co., Ltd

  • China,Beijing ,Beijing
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China 808nm Wavelength TO Can Laser Diode 200mW Output Power Single Emitter
China 808nm Wavelength TO Can Laser Diode 200mW Output Power Single Emitter

  1. China 808nm Wavelength TO Can Laser Diode 200mW Output Power Single Emitter

808nm Wavelength TO Can Laser Diode 200mW Output Power Single Emitter

  1. MOQ: 200 pcs
  2. Price: Negotiable
  3. Get Latest Price
Payment Terms T/T
Supply Ability 1000 pcs per month
Delivery Time 10-20 working days
Packaging Details Paper Box
Output power 200m Watt
Lasing Wavelength 808±4 nm
Operating Current ≤ 0.22 A
Operating Voltage ≤ 2.00 V
Package TOØ56
Threshold Current ≤ 0.06 A
Brand Name HTOE
Model Number LDM-0808-200m-*0
Place of Origin Beijing, China

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  1. Product Details
  2. Company Details

Product Specification

Payment Terms T/T Supply Ability 1000 pcs per month
Delivery Time 10-20 working days Packaging Details Paper Box
Output power 200m Watt Lasing Wavelength 808±4 nm
Operating Current ≤ 0.22 A Operating Voltage ≤ 2.00 V
Package TOØ56 Threshold Current ≤ 0.06 A
Brand Name HTOE Model Number LDM-0808-200m-*0
Place of Origin Beijing, China
High Light to mount laser diodecollimated laser diode module

808nm wavelength, 200mW output power, TO Packaged Single Emitter Diode Laser

HTOE's LDM-0808-200m-50 is a high-performance multiple transverse mode Fabry-Perot laser diode. The laser emits 200mW optical power with CW mode at 808nm wavelength. LDM-0808-200m-50 is sealed by standard TO-56 package with a flat window. Features and benefits a high electro-optical efficiency and narrow beam, LDM-0808-200m-50 provides reliable operating with a high bright laser beam, It's ideal for pumping Nd:YAG, illumination applications.

 

LDM-0808-200m-50 belongs to HTOE's LDM series, which based on Quantum-well epitaxy and ridge waveguide structure design. HTOE packaged single emitters provide excellent reliability and performance. Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm. Package designs include TO mounts, CoS mounts, C-mounts and F-mounts. Provide beam shaping services like fast-axis compression according to customer demands.

 

Features

  • 808nm center wavelength
  • 200mW optical output power
  • 20µm narrow emitting width 
  • High electro-optical effiency
  • High reliablity
  • With apact TO-56 package

 

Parameters(20℃)

TOØ56 Packaged Single Emitter
Item Parameter Unit LDM-0808-200m-50
Min. Typical Max.
Optical Parameter Output power mW - 200 -
Lasing Wavelength nm 804 808 812
Spectral Width nm - 1.0 2.0
Emitting Area width µm - 20 -
Temperature Coefficient nm/℃ - 0.30 -
Fast Axis Divergence deg - 31 38
Slow Axis Divergence deg - 15 20
Electrical Parameter Slope Efficiency W/A 1.0 - -
Threshold Current A - 0.03 0.06
Operating Current A - 0.20 0.22
Operating Voltage V - 1.80 2.00
Others Package - TOØ56
Operating Temperature 10 ~ 50
Storage Temperature -10 ~ 60
 
 

Package Information

 

TOØ56 Package

 

Function Curve

                                          P-I-V Curve                                                             Spectral Curve

 

Notice

 

1. Item model notice: LDM (Item model), **** (Center wavelength), **** (Output power), ** (Heat sink structure and item width).

2. Data in the sheet are all based on TOØ56 package testing.

3. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.

 

ESD Cautions

 

The primary cause of diode failure is unexpected electrostatic discharge. To help prevent device failures, be sure to handle devices with extreme care. Users should always wear an ESD wrist strap, ground all applicable work surfaces and follow anti-static techniques when handling diode lasers.

 

SAFETY INFORMATION 

 

The laser light emitted from this laser diode is invisible but may be harmful to the human eye. Avoid eye exposure to the beam, both direct and reflected. Products are subject to the risks normally associated with sensitive electronic devices including static discharge, transients, and overload. Please ensure ESD protection prior to handling the products. 

 

 

Company Details

Bronze Gleitlager

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 from Quality China Factory
  • Business Type:

    Manufacturer

  • Year Established:

    1998

  • Total Annual:

    3500000-4500000

  • Employee Number:

    100~200

  • Ecer Certification:

    Active Member

Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital:227 million RMB Located in Shahe Industrial Park, Beijing Employees... Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital:227 million RMB Located in Shahe Industrial Park, Beijing Employees...

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  • Hi-Tech Optoelectronics Co., Ltd
  • Shahe Industrial Park, Changping District, Beijing, China
  • http://www.htoelaserdiode.com/

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