Hi-Tech Optoelectronics Co., Ltd
| Payment Terms | T/T |
| Supply Ability | 1000 pcs per month |
| Delivery Time | 10-20 working days |
| Packaging Details | Paper Box |
| Output power | 300m Watt |
| Lasing Wavelength | 808±4 nm |
| Operating Current | ≤ 0.33 A |
| Operating Voltage | ≤ 2.00 V |
| Package | TOØ56 |
| Threshold Current | ≤ 0.1 A |
| Brand Name | HTOE |
| Model Number | LDM-0808-300m-*1 |
| Place of Origin | Beijing, China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 1000 pcs per month |
| Delivery Time | 10-20 working days | Packaging Details | Paper Box |
| Output power | 300m Watt | Lasing Wavelength | 808±4 nm |
| Operating Current | ≤ 0.33 A | Operating Voltage | ≤ 2.00 V |
| Package | TOØ56 | Threshold Current | ≤ 0.1 A |
| Brand Name | HTOE | Model Number | LDM-0808-300m-*1 |
| Place of Origin | Beijing, China | ||
| High Light | to mount laser diode ，collimated laser diode module | ||
808nm wavelength, 300mW Laser Diode, TO Packaged Single Emitter Diode Laser
HTOE's LDM-0808-300m-59 is a high-performance multiple transverse mode Fabry-Perot laser diode. The laser emits 300mW optical power with CW mode at 808nm wavelength. LDM-0808-300m-59 is sealed by standard TO-56 package with a flat window. Features and benefits a high electro-optical efficiency and narrow beam, LDM-0808-300m-59 provides reliable operating with a high bright laser beam, It's ideal for pumping Nd:YAG, illumination applications.
LDM-0808-300m-59 belongs to HTOE's LDM series, which based on Quantum-well epitaxy and ridge waveguide structure design. HTOE packaged single emitters provide excellent reliability and performance. Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm. Package designs include TO mounts, CoS mounts, C-mounts and F-mounts. Provide beam shaping services like fast-axis compression according to customer demands.
Features
· 808nm center wavelength
· 300mW optical output power
· High electro-optical effiency
· High reliablity
· With compact TO-56 package
Parameters(20℃)
| TOØ56 Packaged Single Emitter | |||||
| Item | Parameter | Unit | LDM-0808-300m-59 | ||
| Min. | Typical | Max. | |||
| Optical Parameter | Output power | mW | - | 300 | - |
| Lasing Wavelength | nm | 804 | 808 | 812 | |
| Spectral Width | nm | - | 1.0 | 2.0 | |
| Emitting Area width | µm | - | 40 | - | |
| Temperature Coefficient | nm/℃ | - | 0.30 | - | |
| Fast Axis Divergence | deg | 31 | 38 | ||
| Slow Axis Divergence | deg | - | 15 | 20 | |
| Electrical Parameter | Slope Efficiency | W/A | 1.0 | - | - |
| Threshold Current | A | - | 0.06 | 0.10 | |
| Operating Current | A | - | - | 0.33 | |
| Operating Voltage | V | - | 1.8 | 2.00 | |
| Others | Package | - | TOØ56 | ||
| Operating Temperature | ℃ | 10 ~ 50 | |||
| Storage Temperature | ℃ | -10 ~ 60 | |||
Package Information
TOØ56 Package
Function Curve
P-I-V Curve Spectral Curve
Notice
1. Item model notice: LDM (Item model), **** (Center wavelength), **** (Output power), ** (Heat sink structure and item width).
2. Data in the sheet are all based on TOØ56 package testing.
3. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.
ESD Cautions
The primary cause of diode failure is unexpected electrostatic discharge. To help prevent device failures, be sure to handle devices with extreme care. Users should always wear an ESD wrist strap, ground all applicable work surfaces and follow anti-static techniques when handling diode lasers.
SAFETY INFORMATION
The laser light emitted from this laser diode is invisible but may be harmful to the human eye. Avoid eye exposure to the beam, both direct and reflected. Products are subject to the risks normally associated with sensitive electronic devices including static discharge, transients, and overload. Please ensure ESD protection prior to handling the products.
Company Details
Business Type:
Manufacturer
Year Established:
1998
Total Annual:
3500000-4500000
Employee Number:
100~200
Ecer Certification：
Active Member
Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital：227 million RMB Located in Shahe Industrial Park, Beijing Employees... Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center. Established in 1999 Registered Capital：227 million RMB Located in Shahe Industrial Park, Beijing Employees...
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