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{"title":"GaN on Sapphire wafer manufacturer 2 Inch GaN Substrate","imgUrl":"https:\/\/img.silkroadsl.com\/nimg\/\/b4\/4a\/79f9ec5f5b99deab2ee2b42646e7-200x200-1\/gan_on_sapphire_wafer_manufacturer_2_inch_gan_substrate.jpg","attrs":{"Brand Name":"","Model Number":"","Certification":"","Place of Origin":""}}
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4 inch GaN-on-Si epi wafer manufacturer Power HEMT
Homray Material Technology Supply 4inch,6 inch and 8 inch diameter GaN-on-Si epi wafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate for power & RF applications.Each layer can be customized. The benifits of using GaN epi wafers:
5G-related RF devices, such as power amplifier
High-efficiency power electronics devices, such as power supplies, DC/DC converter, etc.
Durable and reliable devices in harsh environments
High-end sensor devices
Company Details
Bronze Gleitlager
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Bronze Sleeve Bushings
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