Homray Material Technology
| Payment Terms | T/T |
| Supply Ability | |
| Delivery Time | |
| Brand Name | HMT |
| Model Number | 6 inch |
| Certification | |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Supply Ability | |
| Delivery Time | Brand Name | HMT | |
| Model Number | 6 inch | Certification | |
| Place of Origin | CHINA |
SI type SiC ingot manufacturer sell semi-insulating sic wafer
HMT as the leading supplier and manufacturer of SiC ingot, our SiC crystal ingot have 4 inch and 6 inch with N type and SI type. Quality SiC Substrate Supplier & Manufacture in China, Contact Now! Quality Assurance.
Semi-insulating silicon carbide substrates are mainly used in gallium nitride rf devices. By growing gan epitaxy layer on semi-insulating silicon carbide substrate, silicon carbide based GAN epitaxy sheet can be further made into GAN radio frequency device. Microwave radio frequency components is the foundation of realize the signal sending and receiving components, is the core of the wireless communication, mainly including rf switch, LNA, power amplifier, filter and other devices, among them, the power amplifier is rf signal amplification device, directly determine the mobile terminal and base station of wireless communication distance, key parameters such as the signal quality.
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