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{"title":"GaN on Sapphire wafer manufacturer 2 Inch GaN Substrate","imgUrl":"https:\/\/img.silkroadsl.com\/nimg\/\/b4\/4a\/79f9ec5f5b99deab2ee2b42646e7-200x200-1\/gan_on_sapphire_wafer_manufacturer_2_inch_gan_substrate.jpg","attrs":{"Brand Name":"","Model Number":"","Certification":"","Place of Origin":""}}
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SiC Ingot Factory Conductive SiC Substrate Supplier 6 inch
China HMT company supply high quality SiC ingot at competitive price. The thickness of SiC ingot is 15~20mm per PCS.
The third generation semiconductor uses Silicon Carbide (SiC)and Gallium Nitride (GaN) as the main materials, which is different from the first generation semiconductor which uses Silicon (Si) and Germanium (Ge) as the main materials, and the second generation semiconductor uses Gallium Arsenide (GaAs), Indium Phosphide (InP) and Aluminum Gallium Arsenide (AlGaAs) as the main materials. In high power applications, the third generation semiconductor has wide energy gap, high temperature resistance and high power density characteristics; In high frequency applications, it has the characteristics of low energy consumption and good heat dissipation. Demand for electric vehicles, 5G infrastructure and fast charging are the main growth drivers.
Company Details
Bronze Gleitlager
,
Bronze Sleeve Bushings
and
Graphite Plugged Bushings
from Quality China Factory
Ecer Certification：
Active Member
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