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Homray Material Technology

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China 4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer
China 4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer

  1. China 4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer

4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer

  1. MOQ: 5 PCS
  2. Price:
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Supply Ability
Delivery Time
Brand Name HMT
Model Number 6 INCH
Certification
Place of Origin CHINA

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  1. Product Details
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Product Specification

Payment Terms Supply Ability
Delivery Time Brand Name HMT
Model Number 6 INCH Certification
Place of Origin CHINA

4H-N SiC wafer manufacturer 4H-SI SIicon Carbide substrate semiconductor wafer supplier

Homray Material Technologyprovide high quality silicon carbide SiC wafer to electronic and opto electronicindustry. Silicon carbide SiC waferis a next generation semiconductor material, with unique electricalpropertiesand excellent thermal properties , compared to silicon wafer and galliumarsenide wafer ,silicon carbide waferis more suitable for high temperature and high power device.Silicon carbide wafercan be supplied in diameter 4inch,6inch , both 4H-N and 4H-SI. Please contact HMT for more detailed spec.

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  • Homray Material Technology
  • 苏州吴中区苏蠡路
  • http://www.homray-material.com

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