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Shenzhen GS Electronic Technology Co., Ltd. CN

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China Original New In Stock MOSFET Transistor Diode Thyristor SOT-23 MMBT3906LT1G IC
China Original New In Stock MOSFET Transistor Diode Thyristor SOT-23 MMBT3906LT1G IC

  1. China Original New In Stock MOSFET Transistor Diode Thyristor SOT-23 MMBT3906LT1G IC

Original New In Stock MOSFET Transistor Diode Thyristor SOT-23 MMBT3906LT1G IC

  1. MOQ: 1
  2. Price: USD 0.01-9.99/ Unit
  3. Get Latest Price
Description MMBT3906LT1G
Stock 10000
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram
Shipping Method LCL, AIR, FCL, Express
P/N MMBT3906LT1G
PKG SOT-23
Brand ON
QTY 1pcs
D/C 2023+
D/T In stock

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  1. Product Details
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Product Specification

Description MMBT3906LT1G Stock 10000
Payment Terms L/C, D/A, D/P, T/T, Western Union, MoneyGram Shipping Method LCL, AIR, FCL, Express
P/N MMBT3906LT1G PKG SOT-23
Brand ON QTY 1pcs
D/C 2023+ D/T In stock

Good quality Electronic Component provider from China——GS Electronics,

MMBT3906LT1G - Product Details

 

Introduction:
The MMBT3906LT1G is a high-quality PNP transistor that offers excellent performance and reliability in a compact package. Designed for a wide range of applications, this transistor is well-suited for use in amplifiers, switches, and other electronic circuits. Its exceptional electrical characteristics and small form factor make it an ideal choice for projects where space is limited and performance is crucial.

 

Key Features:

  1. PNP Transistor: The MMBT3906LT1G is a PNP (Positive-Negative-Positive) transistor, enabling efficient amplification and switching of electrical signals.

  2. Small Signal Amplification: This transistor is specifically designed for small signal amplification applications, making it suitable for audio amplifiers, oscillators, and other low-power circuits.

  3. High Gain: The MMBT3906LT1G offers high current gain (hFE) of up to 300, ensuring effective signal amplification and accurate reproduction.

  4. Low Noise: With a low noise figure, this transistor minimizes unwanted noise and interference, making it ideal for sensitive audio and radio frequency applications.

  5. Fast Switching Speed: The MMBT3906LT1G features a fast switching speed, allowing for rapid on/off transitions in digital circuits and switching applications.

  6. Wide Voltage Range: This transistor operates within a wide voltage range of -40V, making it suitable for a broad range of electronic designs.

  7. SMD Package: The MMBT3906LT1G comes in a compact SMD (Surface Mount Device) package, facilitating easy integration into densely populated circuit boards and space-constrained applications.

 

Electrical Characteristics:

To provide you with a better understanding of the MMBT3906LT1G's electrical performance, please refer to the table below:

Parameter Symbol Value
Collector Current (DC) Ic 200 mA
Collector Power (Max) Pc 350 mW
Collector-Emitter Voltage (Max) Vceo -40 V
Collector-Base Voltage (Max) Vcbo -40 V
Emitter-Base Voltage (Max) Vebo -5 V
Transition Frequency ft 250 MHz
Operating Temperature Range Top -55°C to +150°C

 

Applications:

The MMBT3906LT1G transistor finds applications in a wide range of electronic circuits, including:

  1. Amplifiers: Use the MMBT3906LT1G in audio amplifiers, preamplifiers, and other low-power amplification stages.

  2. Switching Circuits: Employ this transistor in switching circuits, such as digital switches, relay drivers, and logic gates.

  3. Oscillators: The MMBT3906LT1G can be used in oscillator circuits for generating stable and accurate frequencies.

  4. Signal Processing: Utilize this transistor in signal processing applications, such as filters, mixers, and modulators.

  5. RF (Radio Frequency) Circuits: The MMBT3906LT1G's low noise and high gain make it suitable for RF circuits, including RF amplifiers and receivers.

 

Please note that this is just a brief overview of the MMBT3906LT1G transistor's features and applications. For a more detailed understanding of its characteristics and usage, please refer to the product datasheet and application notes.

In conclusion, the MMBT3906LT1G PNP transistor is a compact and reliable component that delivers high performance in a wide range of electronic circuits. With its small form factor, high gain, low noise, and fast switching speed, it is an excellent choice for amplification, switching, and signal processing tasks.

 

Incorporate the MMBT3906LT1G into your designs to enhance performance and achieve optimal results.

For more information, datasheets, and support, please visit our website or contact our sales team.

 

Amplifier,Power Management ICs,Memory ICs,MCU,Microcontroller,Data Acquisition ICs,Embedded Processor,Clock Timing ICs,Interface ICs,Logic ICs,Radio Frequency ICs,Sensor,Discrete Semiconductor Products,Electronics Passive Components

 

Visit www.gselectro.com for more information

Company Details

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 from Quality China Factory
  • Business Type:

    Distributor/Wholesaler

  • Year Established:

    2013

  • Total Annual:

    5000000-8000000

  • Ecer Certification:

    Verified Supplier

GS, a famous and competitive electronics distributor in Asia, also is an excellent strategic partner for EMS OEM to quickly find authentic & traceable electronic components for purchasing. our goal is consistently "zero defect" of shipped products. GS’s sustained success is the r... GS, a famous and competitive electronics distributor in Asia, also is an excellent strategic partner for EMS OEM to quickly find authentic & traceable electronic components for purchasing. our goal is consistently "zero defect" of shipped products. GS’s sustained success is the r...

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  • Shenzhen GS Electronic Technology Co., Ltd. CN
  • 4B10, Building B, Overseas Decoration,122 Zhenhua Road,Futian Shenzhen Guangdong,China
  • https://www.gselectro.com/

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