XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| product name | float zone silicon wafe |
| feature | high resistivity |
| Diameter | 150±0.5 mm |
| Thickness | 675±15 um |
| Type/Dopant | P/Boron |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
View Detail Information
Explore similar products
2 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 100 Prime Grade 2"
2 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 111 Prime Grade 2"
2 Inch Silicon Wafer FZ P Type Boron Doped Orientation 100 Prime Grade 2"
2 Inch Silicon Wafer FZ P Type Boron Doped Orientation 111 Prime Grade 2"
Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | product name | float zone silicon wafe |
| feature | high resistivity | Diameter | 150±0.5 mm |
| Thickness | 675±15 um | Type/Dopant | P/Boron |
| Brand Name | PAM-XIAMEN | Place of Origin | China |
| High Light | cz silicon wafer ，epitaxial silicon wafer | ||
Float-Zone Silicon Wafer With High-Resistivity And Good Lifetime.
FZ-Silicon
The mono-crystalline silicon with the characteristics of low foreign-material content, low defect density and perfect crystal structure is produced with the float-zone process; no foreign material is introduced during the crystal growth. The FZ-Silicon conductivity is usually above 1000 Ω-cm, and the FZ-Silicon is mainly used to produce the high inverse-voltage elements and photoelectronic devices.
NTDFZ-Silicon
The mono-crystalline silicon with high-resistivity and uniformity can be achieved by neutron irradiation of FZ-silicon, to ensure the yield and uniformity of produced elements, and is mainly used to produce the silicon rectifier (SR), silicon control (SCR), giant transistor (GTR), gate-turn-off thyristor (GTO), static induction thyristor (SITH), insulate-gate bipolar transistor (IGBT), extra HV diode (PIN), smart power and power IC, etc; it is the main functional material for various frequency converters, rectifiers, large-power control elements, new power electronic devices, detectors, sensors, photoelectronic devices and special power devices..
GDFZ-Silicon
Utilizing the foreign-material diffusion mechanism, add the gas-phase foreign-material during the float-zone process of monocrystalline silicon, to solve the doping problem of float-zone process from the root, and to get the GDFZ-silicon which is N-type or P-type, has the resistivity 0.001-300 Ω.cm, relative good resistivity uniformity and neutron irradiation. It is applicable for producing various semi-conductor power elements, insulate-gate bipolar transistor (IGBT) and high-efficiency solar cell, etc.
CFZ-Silicon
The monocrystalline-silicon is produced with the combination of Czochralski and float-zone processes, and has the quality between the CZ monocrystalline silicon and FZ monocrystalline silicon; the special elements can be doped, such as the Ga, Ge and others. The new-generation CFZ silicon solar wafers are better than various silicon wafers in global PV industry on each performance index; the conversion efficiency of solar panel is up to 24-26%. The products are mainly applied in the high-efficiency solar batteries with the special structure, back-contact, HIT and other special processes, and more widely used in the LED, power elements, automobile, satellite and other various products and fields.
Our advantages at a glance
1.Advanced epitaxy growth equipment and test equipment.
2.Offer the highest quality with low defect density and good surface roughness.
3.Strong research team support and technology support for our customers
FZ monocrystalline silicon specification
| Type | Conduction Type | Orientation | Diameter(mm) | Conductivity(Ω•cm) |
| High resistance | N&P | <100>&<111> | 76.2-200 | >1000 |
| NTD | N | <100>&<111> | 76.2-200 | 30-800 |
| CFZ | N&P | <100>&<111> | 76.2-200 | 1-50 |
| GD | N&P | <100>&<111> | 76.2-200 | 0.001-300 |
Wafer specification
| Ingot Parameter | Item | Description |
| Growing method | FZ | |
| Orientation | <111> | |
| Off-orientation | 4±0.5 degree to the nearest <110> | |
| Type/Dopant | P/Boron | |
| Resistivity | 10-20 W.cm | |
| RRV | ≤15% (Max edge-Cen)/Cen |
| Wafer Parameter | Item | Description |
| Diameter | 150±0.5 mm | |
| Thickness | 675±15 um | |
| Primary Flat Length | 57.5±2.5 mm | |
| Primary Flat Orientation | <011>±1 degree | |
| Secondary Flat Length | None | |
| Secondary Flat Orientation | None | |
| TTV | ≤5 um | |
| Bow | ≤40 um | |
| Warp | ≤40 um | |
| Edge Profile | SEMI Standard | |
| Front Surface | Chemical-Mechenical Polishing | |
| LPD | ≥0.3 um@≤15 pcs | |
| Back Surface | Acid Etched | |
| Edge Chips | None | |
| Package | Vacuum Packing; Inner Plastic, Outer Aluminum |
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
Get in touch with us
Leave a Message, we will call you back quickly!