XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | InSb Wafer |
| Wafer Diamter | 2 inch |
| Conduction Type | N Type |
| Grade | Test Grade |
| Wafer Thickness | 50.5±0.5mm |
| keyword | single crystal InSb Wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | InSb Wafer | Wafer Diamter | 2 inch |
| Conduction Type | N Type | Grade | Test Grade |
| Wafer Thickness | 50.5±0.5mm | keyword | single crystal InSb Wafer |
| Brand Name | PAM-XIAMEN | Place of Origin | China |
| High Light | as cut wafer ，polished silicon wafer | ||
N Type , InSb Wafer , 2”, Test Grade -Semiconductor Wafer Manufacturing
PAM-XIAMEN provides single crystal InSb(Indium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. Indium Antimonide (InSb) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness.PAM-XIAMEN can provide epi ready grade InSb wafer for your MOCVD & MBE epitaxial application .
Please contact our engineer team for more wafer information.
N Type, InSb Wafer, 2”, Test Grade
| Wafer Specification | |
| Item | Specifications |
| Wafer Diameter |
2″50.5±0.5mm |
| Crystal Orientation |
2″(111)AorB±0.1° |
| Thickness |
2″625±25um |
| Primary flat length |
2″16±2mm |
| Secondary flat length |
2″8±1mm |
| Surface Finish | P/E, P/P |
| Package | Epi-Ready,Single wafer container or CF cassette |
| Electrical and Doping Specification | ||||
| Conduction Type | n-type | n-type | n-type | n-type |
| Dopant | Undoped | Tellurium | Low tellurium | High tellurium |
| EPD cm-2 | ≤50 | |||
| Mobility cm² V-1s-1 | ≥4*105 | ≥2.5*104 | ≥2.5*105 | Not Specified |
| Carrier Concentration cm-3 | 5*1013-3*1014 | (1-7)*1017 | 4*1014-2*1015 | ≥1*1018 |
Band structure and carrier concentration of InSb Wafer
Band structure and carrier concentration of InSb Wafer include Basic Parameters,Temperature, Dependences,Dependence of the Energy Gap on Hydrostatic Pressure, Effective Masses, Donors and Acceptors
Basic Parameters
Temperature Dependences
Dependence of the Energy Gap on Hydrostatic Pressure
Effective Masses
Donors and Acceptors
| Energy gap | 0.17 eV |
| Energy separation (EΓL) between Γ and L valleys | 0.51 eV |
| Energy separation (EΓX) between Γ and X valleys | 0.83 eV |
| Energy spin-orbital splitting | 0.80 eV |
| Intrinsic carrier concentration | 2·1016 cm-3 |
| Intrinsic resistivity | 4·10-3 Ω·cm |
| Effective conduction band density of states | 4.2·1016 cm-3 |
| Effective valence band density of states | 7.3·1018 cm-3 |
| Band structure and carrier concentration of InSb 300 K Eg = 0.17 eV EL = 0.68 eV EX= 1.0 eV Eso = 0.8 eV |
Eg = 0.24 - 6·10-4·T2/(T+500) (eV),
where T is temperatures in degrees K (0 < T < 300).
Nc~ 8·1012·T3/2 (cm-3)
Nn ~ 1.4·1015·T3/2 (cm-3).
ni = (Nc·Nν)1/2exp(-Eg/(2kbT))
For 200K < T < 800 K ni = 2.9·1011(2400 - T)3/4 ·(1+2.7·10-4·T)·T3/2 ·exp(-(0.129 - 1.5·10-4T)/(2kbT)) (cm-3)
| The temperature dependences of the intrinsic carrier concentration. |
| Fermi level versus temperature for different concentrations of shallow donors and acceptors. |
Eg≈Eg(0) + 13.7·10-3P - 3.6·10-5P2 (eV)
EL≈EL(0) + 4.7·10-3P - 1.1·10-5P2 (eV)
EX≈EX(0) - 3.5·10-3P + 0.64·10-5P2 (eV),
where P is pressure in kbar.
| Electrons: | |
| For Γ-valley | mΓ = 0.0.14mo |
| Non-parabolicity: E(1+αE) = h2k2/(2mΓ) | α = 4.1 (eV-1) |
| In the L-valley effective mass of density of states | mL=0.25mo |
| Electron effective mass versus electron concentration |
| Holes: | mh = 0.43mo |
| Heavy | mh = 0.43mo |
| Light | mlp = 0.015mo |
| Split-off band | mso = 0.19mo |
| Effective mass of density of states | mv = 0.43mo |
Se, S, Te.
| Cd | Zn | Cr | Cu° | Cu- |
| 0.01 | 0.01 | 0.07 | 0.028 | 0.056 |
Are You Looking for an InSb substrate?
PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InSb wafers, send us enquiry today to learn more about how we can work with you to get you the InSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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