XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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N Type , InSb Substrate , 3”, Prime Grade -Semiconductor Wafer Manufacturing
N Type , LEC InSb(Indium Antimonide) Wafer , 2”, Prime Grade , Epi Ready
Undoped , Indium Antimonide Wafer , 3”, Dummy Grade
Undoped InSb Wafer , 2”, As - Cut Wafer , Mechanical Wafer , Or Polished Wafer
Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | Brand Name | PAM-XIAMEN |
| Place of Origin | China | ||
| High Light | indium antimonide wafer ，as cut wafer | ||
PAM-XIAMEN offers Compound Semiconductor InSb wafer - Indium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Indium antimonide (InSb) is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductor material from the III-V group used in infrared detectors, including thermal imaging cameras,FLIR systems, infrared homing missile guidance systems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiation source as it is a strong photo-Dember emitter.
| Wafer Specification | |
| Item | Specifications |
| Wafer Diameter | 2"50.5±0.5mm 3"76.2±0.4mm 4"1000.0±0.5mm |
| Crystal Orientation | 2"(111)AorB±0.1° 3"(111)AorB±0.1° 4"(111)AorB±0.1° |
| Thickness | 2"625±25um 3" 800or900±25um 4"1000±25um |
| Primary flat length | 2"16±2mm 3"22±2mm 4"32.5±2.5mm |
| Secondary flat length | 2"8±1mm 3"11±1mm 4"18±1mm |
| Surface Finish | P/E, P/P |
| Package | Epi-Ready,Single wafer container or CF cassette |
| Electrical and Doping Specification | |||||
| Conduction Type | n-type | n-type | n-type | n-type | p-type |
| Dopant | Undoped | Tellurium | Low tellurium | High tellurium | Genmanium |
| EPD cm-2 | 2"3"4"≤50 | 2"≤100 | |||
| Mobility cm² V-1s-1 | ≥4*105 | ≥2.5*104 | ≥2.5*105 | Not Specified | 8000-4000 |
| Carrier Concentration cm-3 | 5*1013-3*1014 | (1-7)*1017 | 4*1014-2*1015 | ≥1*1018 | 5*1014-3*1015 |
1)2"(50.8mm)InSb
Orientation:(100)
Type/Dopant:N/undoped
Diameter:50.8mm
Thickness:300±25µm;500um
Nc:<2E14a/cm3
Polish:SSP
2)2"(50.8mm)InSb
Orientation:(100)
Type/Dopant:N/Te
Diameter:50.8mm
Carrier Concentration: 0.8 – 2.1 x 1015 cm-3
Thickness:450+/- 25 um;525±25µm
EPD < 200 cm-2
Polish:SSP
3)2"(50.8mm)InSb
Orientation:(111) + 0.5°
Thickness:450+/- 50 um
Type/Dopant:N/undoped
Carrier Concentration: < 5 x 10^14 cm-3
EPD < 5 x 103 cm-2
Surface roughness: < 15 A
Bow/Warp: < 30 um
Polish:SSP
4)2"(50.8mm)InSb
Orientation:(111) + 0.5°
Type/Dopant:P/Ge
Polish:SSP
5)2"(50.8mm)InSb
Thickness:525±25µm,
Orientation:[111A]±0.5°
Type/Dopant:N/Te
Ro=(0.020-0.028)Ohmcm,
Nc=(4-8)E14cm-3/cc,
u=(4.05E5-4.33E5)cm²/Vs,
EPD<100/cm²,
Mobility:4E5cm2/Vs
One side edge;
In(A) Face: Chemically-mechanically final polished to 0.1µm (Final Polish),
Sb(B) Face: Chemically-mechanically final polished to <5µm (Lasermark),
NOTE: Nc and Mobility are at 77ºK.
Polish:SSP;DSP
6)2"(50.8mm) GaSb
Thickness:525±25µm,
Orientation:[111B]±0.5°,
Type/Dopant:P/undoped;N/undoped
Polish:SSP;DSP
Surface Condition and other Specification
Indium Antimonide (InSb) wafer can be offered as wafers with as-cut, etched or polished finishes with wide range of doping concentration and thickness. The wafer could be high quality epi-ready finishing.
Orientation Specification
Wafer surface orientations are supplied to an accuracy of +/- 0.5 degrees using a triple axis X-Ray diffractometer system. Substrates can also be supplied with very precise misorientations in any direction from the growth plane. The available orientaiton could be (100),(111), (110) or other orientation or mis degree.
Packaging condition
Polished wafer:individually sealed in two outer bags in inert atmosphere. Cassette shipments are available if required).
As-cut Wafer:Cassette shipment. (Glassine bag available on request).
Words Wiki
Indium antimonide (InSb) wafer is a crystalline compound made from the elements indium (In) and antimony (Sb). It is a narrow-gap semiconductormaterial from the III-V group used in infrared detectors, including thermal imaging cameras, FLIR systems, infrared homing missile guidancesystems, and in infrared astronomy. The indium antimonide detectors are sensitive between 1–5 µm wavelengths. Indium antimonide was a very common detector in the old, single-detector mechanically scanned thermal imaging systems. Another application is as a terahertz radiationsource as it is a strong photo-Dember emitter.
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Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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