XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| product name | As-Cut Wafer GaSb Wafer |
| Conduction Type | P type |
| Dopant | Undoped |
| Wafer Thickness | 500±25um |
| other name | GaSb Mechanical Wafer |
| Wafer Diameter | 2 inch |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | product name | As-Cut Wafer GaSb Wafer |
| Conduction Type | P type | Dopant | Undoped |
| Wafer Thickness | 500±25um | other name | GaSb Mechanical Wafer |
| Wafer Diameter | 2 inch | Brand Name | PAM-XIAMEN |
| Place of Origin | China | ||
| High Light | gallium antimonide ，2 inch wafer | ||
Undoped GaSb Wafer, 2”, As-Cut Wafer, Mechanical Wafer, Or Polished Wafer
PAM-XIAMEN offers GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.It has a lattice constant of about 0.61 nm. GaSb can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.
2" GaSb Wafer Specification
| Item | Specifications |
| Dopant | Undoped |
| Conduction Type | P-type |
| Wafer Diameter | 2" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 500±25um |
| Primary Flat Length | 16±2mm |
| Secondary Flat Length | 8±1mm |
| Carrier Concentration | (1-2)x1017cm-3 |
| Mobility | 600-700cm2/V.s |
| EPD | <2x103cm-2 |
| TTV | <10um |
| BOW | <10um |
| WARP | <12um |
| Laser Marking | upon request |
| Suface Finish | P/E, P/P |
| Epi Ready | yes |
| Package | Single wafer container or cassette |
Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Temperature, Dependences,Dependence of the Energy Gap on Hydrostatic Pressure, Effective Masses, Donors and Acceptors
Basic Parameters
| Energy gap | 0.726 eV |
| Energy separation (EΓL) between Γ and L valleys | 0.084 eV |
| Energy separation (EΓX) between Γ and X valleys | 0.31 eV |
| Energy spin-orbital splitting | 0.80 eV |
| Intrinsic carrier concentration | 1.5·1012 cm-3 |
| Intrinsic resistivity | 103 Ω·cm |
| Effective conduction band density of states | 2.1·1017 cm-3 |
| Effective valence band density of states | 1.8·1019 cm-3 |
| Band structure and carrier concentration of GaSb. 300 K Eg= 0.726 eV EL = 0.81 eV EX = 1.03 eV Eso = 0.8 eV |
Eg = 0.813 - 3.78·10-4·T2/(T+94) (eV),
where T is temperature in degrees K (0 < T < 300).
EL = 0.902 - 3.97·10-4·T2/(T+94) (eV)
EX = 1.142 - 4.75·10-4·T2/(T+94) (eV)
Nc = 4.0·1013·T3/2 (cm-3)
Nc = 4.0·1013·T3/2 (cm-3)
Nv = 3.5·1015·T3/2 (cm-3)
| The temperature dependences of the intrinsic carrier concentration. |
Eg = Eg(0) + 14.5·10-3P (eV)
EL = EL(0) + 5.0·10-3P (eV)
EX = EX(0) - 1.5·10-3P (eV),
where P is pressure in kbar.
| Energy gap narrowing versus acceptor acceptor doping density. Curve is calculated for p-GaSb according to Points show experimental results |
Eg = 13.6·10-9·Nd1/3 + 1.66·10-7·Nd1/4 + 119·10-12·Nd1/2 (eV)
Eg = 8.07·10-9·Na1/3 + 2.80·10-7·Na1/4+ 4.12·10-12·Na1/2 (eV)
| For Γ-valley | mΓ = 0.041mo |
| In the L- valley the surfaces of equal energy are ellipsoids | |
| ml= 0.95mo | |
| mt= 0.11mo | |
| Effective mass of density of states | |
| mL= 16(mlmt2)1/3= 0.57mo | |
| In the X- valley the surfaces of equal energy are ellipsoids | |
| ml= 1.51mo | |
| mt= 0.22mo | |
| Effective mass of density of states | |
| mX= 9(mlmt2)1/3= 0.87mo | |
| Heavy | mh = 0.4mo |
| Light | mlp = 0.05mo |
| Split-off band | mso = 0.14mo |
| Effective mass of density of states | mv = 0.8mo |
| Effective mass of density of conductivity | mvc = 0.3mo |
| The diagram of IV group donor states |
| Te(L) | Te(X) | Se(L) | Se(X) | S(L) | S(X) |
| ~0.02 | ≤0.08 | ~0.05 | ~0.23 | ~0.15 | ~0.30 |
For typical donor concentrations Nd≥ 1017 cm-3 the shallow donor states connected with Γ-valley did not appear.
The dominant acceptor of undoped GaSb seems to be a native defect.
This acceptor is doubly ionizable
| Ea1 | Ea2 | Si | Ge | Zn |
| 0.03 | 0.1 | ~0.01 | ~0.009 | ~0.037 |
Are You Looking for an GaSb Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including GaSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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