XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| product name | GaSb Wafer |
| Conduction Type | N Type |
| Dopant | Tellurium |
| Grade | Prime Grade |
| other name | single crystal Gallium Antimonide Wafer |
| Wafer Diameter | 2" |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | product name | GaSb Wafer |
| Conduction Type | N Type | Dopant | Tellurium |
| Grade | Prime Grade | other name | single crystal Gallium Antimonide Wafer |
| Wafer Diameter | 2" | Brand Name | PAM-XIAMEN |
| Place of Origin | China | ||
| High Light | gallium antimonide ，2 inch wafer | ||
N Type , Te-Doped GaSb Wafer , 2”, Prime Grade , Epi Ready
PAM-XIAMEN manufactures high purity single crystal GaSb(Gallium Antimonide) Wafers Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. It has a band gap of 0.67 eV. Our standard wafer diameters range from 1 inch to 4 inches, wafers can be produced in various thicknesses and different orientations (100),(111),(110) with polished wafers and blank wafers. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, mechanical grade, and optical grade. PAM-XIAMEN also offer GaSb material to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.
| 2" GaSb Wafer Specification | ||
| Item | Specifications | |
| Dopant | Tellurium | |
| Conduction Type | N-type | |
| Wafer Diameter | 2" | |
| Wafer Orientation | (100)±0.5° | |
| Wafer Thickness | 500±25um | |
| Primary Flat Length | 16±2mm | |
| Secondary Flat Length | 8±1mm | |
| Carrier Concentration | (1-20)x1017cm-3 | |
| Mobility | 2000-3500cm2/V.s | |
| EPD | <2x103cm-2 | |
| TTV | <10um | |
| BOW | <10um | |
| WARP | <12um | |
| Laser Marking | upon request | |
| Suface Finish | P/E, P/P | |
| Epi Ready | yes | |
| Package | Single wafer container or cassette | |
Basic Parameters at 300 K of GaSb Wafer
| Crystal structure | Zinc Blende |
| Group of symmetry | Td2-F43m |
| Number of atoms in 1 cm3 | 3.53·1022 |
| Debye temperature | 266 K |
| Density | 5.61 g cm-3 |
| Dielectric constant (static) | 15.7 |
| Dielectric constant (high frequency) | 14.4 |
| Effective electron mass | 0.041mo |
| Effective hole masses mh | 0.4mo |
| Effective hole masses mlp | 0.05mo |
| Electron affinity | 4.06 eV |
| Lattice constant | 6.09593 A |
| Optical phonon energy | 0.0297 eV |
Are You Looking for an GaSb Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including GaSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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