XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| product name | GaSb Substrate wafer |
| Conduction Type | N Type |
| Dopant | Tellurium |
| Grade | Prime Grade |
| other name | Gallium Antimonide Wafer |
| Wafer Diameter | 3 inch |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | product name | GaSb Substrate wafer |
| Conduction Type | N Type | Dopant | Tellurium |
| Grade | Prime Grade | other name | Gallium Antimonide Wafer |
| Wafer Diameter | 3 inch | Brand Name | PAM-XIAMEN |
| Place of Origin | China | ||
| High Light | gallium antimonide ，2 inch wafer | ||
N Type , GaSb Crystal Wafer Substrate , 3”, Prime Grade, Epi-Ready
PAM-XIAMEN offers GaSb wafer – Gallium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Gallium antimonide (GaSb) is a crystalline compound made from the elements Gallium (Ga) and antimony (Sb).
3" GaSb Wafer Specification
| Item | Specifications |
| Conduction Type | N-type |
| Dopant | Tellurium |
| Wafer Diameter | 3" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 600±25um |
| Primary Flat Length | 22±2mm |
| Secondary Flat Length | 11±1mm |
| Carrier Concentration | (1-20)x1017cm-3 |
| Mobility | 2000-3500cm2/V.s |
| EPD | <2x103cm-2 |
| TTV | <12um |
| BOW | <12um |
| WARP | <15um |
| Laser marking | upon request |
| Suface finish | P/E, P/P |
| Epi ready | yes |
| Package | Single wafer container or cassette |
Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Mobility and Hall Effect,Transport Properties in High Electric Fields
,Impact Ionization,Recombination Parameters
Basic Parameters
| Breakdown field | ≈5·104 |
| Mobility electrons | ≤ 3000 cm2 V-1 s-1 |
| Mobility holes | ≤ 1000 cm2 V-1 s-1 |
| Diffusion coefficient electrons | ≤ 75 cm2/s |
| Diffusion coefficient holes | ≤ 25 cm2/s |
| Electron thermal velocity | 5.8·105 m/s |
| Hole thermal velocity | 2.1·105 m/s |
| Electron Hall mobility versus temperature for different doping levels. 1. Nd= 1.7·1018 cm-3 2. Nd= 2.8·1017 cm-3 Broken curves represent the experimental data. Continuous curves represent theoretical calculations. |
| Electron Hall mobility versus electron concentration no. T=77 K. Open circles represent measurements with a group of samples having approximately the same residual acceptor concentrations Na. Full symbols:specimens with lower residual acceptor concentrations. Solid lines represent the theoretical calculations for different values of compensating acceptor densities - either singly (Na-) or doubly (Na--) ionized. 1. Na- = 1.2·1017 or Na-- = 0.4·1017 cm-3 2. Na- =2.85·1017 or Na-- =0.95·1017 cm-3 3. Na- = 4.5·1017 or Na-- = 1.5·1017 cm-3 |
| Hole Hall mobility versus temperature at different compensation levels. 1. Na= 1.39·1017 cm-3; Nd= 9·1015 cm-3; 2. Na= 1.3·1017 cm-3; Nd= 9.5·1016 cm-3; 3. Na= 1.1·1017cm-3; Nd= 9.5·1016 cm-3 |
| Temperature dependence of hole Hall mobility. MBE technique. Hole concentration at 300 K: 1. - 2.28·1016 cm-3; 2. - 1.9·1019 cm-3. |
| The hole Hall mobility versus hole concentration, 300 K. Experimental data are taken from five different papers |
| Calculated field dependence of the electron drift velocity, 300 K. |
| Calculated (solid) end experimental (points) current density dependencies versus the electric field, 300 K. |
| Fraction of electrons in Γ, L, X valleys as a function of electric field,300 K n=6.8·1016 cm-3 |
| Electron temperature as a function of the electric field, T=77 K. full and open circle - experimental data curve are calculated |
| The dependences of αi and βi> versus 1/F. T=77 K Open symbols : F (111). Filled symbols : F (100). |
| The dependences of αi and βi versus 1/F). T=300 K F (100). |
| Radiative lifetime versus donor concentration, T =77 K, GaSb(Te). To extract these dependences from experimental data the values of internal quantum efficiency η were taken: open circles η=0.8; filled circles η=1; |
| Nonradiative lifetime versus donor concentrations, T =77K, GaSb(Te). open circles η= 0.8; filled circles η= 1; (Agaev et al. [1984]). |
| Electron radiative (triangles) and nonradiative (squares) lifetime versus acceptor concentration, p-GaSb, T=77 K. |
| Electron lifetime versus temperature at different acceptor concentrations. Na (cm-3): 1. 5·1018; 2. 2.2·1019; 3. 3.5·1019. |
| Radiative recombination coefficient | ~10-10 cm3 s-1 |
| Auger coefficient | |
| 77K | 2·10-29 cm6s-1 |
| 300 K | 5·10-30 cm6s-1 |
Are You Looking for an GaSb Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including GaSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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