XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| product name | GaSb wafer |
| Conduction Type | N Type |
| Dopant | Tellurium |
| Grade | dummy grade |
| other name | gallium antimonide Wafer |
| Wafer Diameter | 3" |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | product name | GaSb wafer |
| Conduction Type | N Type | Dopant | Tellurium |
| Grade | dummy grade | other name | gallium antimonide Wafer |
| Wafer Diameter | 3" | Brand Name | PAM-XIAMEN |
| Place of Origin | China | ||
| High Light | gallium antimonide ，4 inch wafer | ||
N Type , High Conductive GaSb Substrate , 3”, Dummy Grade
PAM-XIAMEN offers GaSb wafer – gallium antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family.It has a lattice constant of about 0.61 nm. GaSb can be used for Infrared detectors,infrared LEDs and lasers and transistors, and thermophotovoltaic systems.
3" GaSb Wafer Specification
| Item | Specifications |
| Conduction Type | N-type |
| Dopant | Tellurium |
| Wafer Diameter | 3" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 600±25um |
| Primary Flat Length | 22±2mm |
| Secondary Flat Length | 11±1mm |
| Carrier Concentration | (1-20)x1017cm-3 |
| Mobility | 2000-3500cm2/V.s |
| EPD | <2x103cm-2 |
| TTV | <12um |
| BOW | <12um |
| WARP | <15um |
| Laser marking | upon request |
| Suface finish | P/E, P/P |
| Epi ready | yes |
| Package | Single wafer container or cassette |
Optical properties of GaSb Wafer
| Index of refraction | 3.8 |
| Radiative recombination coefficient | ~ 10-10 cm3s-1 |
Infrared refractive index
n = k1/2≈3.71·(1+8.25·10-5T)
Long-wave TO phonon energy hνTO = 27.78 meV (300 K).
Long-wave LO phonon energy hνLO = 28.89 meV (300 K).
| Refractive index n versus photon energy, 300 K |
| Reflectivity versus photon energy, 300 K |
| Intrinsic absorption coefficient near the intrinsic absorption edge in pure p-type samples. T(K): 1. 300, 2. 77, 3. 4.2 |
| Intrinsic absorption edge in p-type GaSb. Na = 3·1019 cm-3; T(K): 1. 215; 2. 140; 3. 77 |
| Intrinsic absorption edge at 77 K for different doping levels, p-GaSb. Na(cm-3): 1. 2.9·1017; 2. 5·1018; 3. 1.8·1019; 4. 3·1019 |
A ground state Rydberg energy RX1 = 2.8 meV.
| The absorption coefficient versus photon energy, T=300 K |
| The impurity absorption at low photon energies, T=80 K Undoped sample (p = 2.4·1017 cm-3 at 300 K) Te added (p = 7.5·1016 cm-3) Se added (p = 4.1·1016 cm-3) |
Are You Looking for an GaSb substrate?
PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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