XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| product name | Undoped GaSb Wafer |
| Conduction Type | P type |
| Dopant | Undoped |
| Wafer Thickness | 500±25um |
| other name | GaSb Polished Wafer |
| Wafer Diameter | 2 inch |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | product name | Undoped GaSb Wafer |
| Conduction Type | P type | Dopant | Undoped |
| Wafer Thickness | 500±25um | other name | GaSb Polished Wafer |
| Wafer Diameter | 2 inch | Brand Name | PAM-XIAMEN |
| Place of Origin | China | ||
| High Light | gallium antimonide ，2 inch wafer | ||
Undoped GaSb Wafer, 2”, Polished Wafer, Epi Ready
PAM-XIAMEN offers GaSb wafer – Gallium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Gallium antimonide (GaSb) is a crystalline compound made from the elements Gallium (Ga) and antimony (Sb).
2" GaSb Wafer Specification
| Item | Specifications |
| Dopant | Undoped |
| Conduction Type | P-type |
| Wafer Diameter | 2" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 500±25um |
| Primary Flat Length | 16±2mm |
| Secondary Flat Length | 8±1mm |
| Carrier Concentration | (1-2)x1017cm-3 |
| Mobility | 600-700cm2/V.s |
| EPD | <2x103cm-2 |
| TTV | <10um |
| BOW | <10um |
| WARP | <12um |
| Laser Marking | upon request |
| Suface Finish | P/E, P/P |
| Epi Ready | yes |
| Package | Single wafer container or cassette |
Basic Parameters at 300 K of GaSb Wafer
| Crystal structure | Zinc Blende |
| Group of symmetry | Td2-F43m |
| Number of atoms in 1 cm3 | 3.53·1022 |
| Debye temperature | 266 K |
| Density | 5.61 g cm-3 |
| Dielectric constant (static) | 15.7 |
| Dielectric constant (high frequency) | 14.4 |
| Effective electron mass | 0.041mo |
| Effective hole masses mh | 0.4mo |
| Effective hole masses mlp | 0.05mo |
| Electron affinity | 4.06 eV |
| Lattice constant | 6.09593 A |
| Optical phonon energy | 0.0297 eV |
Are You Looking for an GaSb substrate?
PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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