XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| product name | powerway Silicon Wafer |
| brand | powerway |
| Dopant | Boron |
| Crystalline structure | Monocrystalline |
| other name | powerway Wafer |
| size | 4 inch |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | product name | powerway Silicon Wafer |
| brand | powerway | Dopant | Boron |
| Crystalline structure | Monocrystalline | other name | powerway Wafer |
| size | 4 inch | Brand Name | PAM-XIAMEN |
| Place of Origin | China | ||
| High Light | float zone wafer ，cz silicon wafer | ||
4 Inch CZ Prime Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4"
PAM-XIAMEN offer silicon dioxide wafer (Thermal Oxide (SiO2) on Silicon Wafers) size from 2” to 6” taken place from 850°C up to 1200°C , SiO2 thin film layers on substrate is mainly used as dielectric material and more recently, which are integrated in MEMS (Micro Electro Mechanical Systems) devices., currently the simplest way to produce silicon oxide layers on silicon wafers is to oxidize silicon with oxygen. Usually, thermal oxidation is made on both faces of a silicon wafer. To get only one side oxidized, a protection is used, then the opposite side is dissolved in BHF. As the thermal oxidation is made by run of 25 to 50 wafers and the dissolution is made wafer by wafer; double and single side silicon oxide wafers can be purchased in the same batch.
4inch CZ Prime Silicon Wafer With Insulating Thermal Oxidation Film Thickness 300nm 4"
| Type | Conduction Type | Orientation | Diameter(mm) | Resistivity(Ω•cm) |
| CZ | N&P | <100><110>&<111> | 50-300 | 1-300 |
| MCZ | N&P | <100><110>&<111> | 50-200 | 1-300 |
| Heavy-doping | N&P | <100><110>&<111> | 50-200 | 0.001-1 |
| Parameter | Unit | Value |
| Crystalline structure | - | Monocrystalline |
| Growth technique | - | CZ |
| Crystal Orientation | - | 100±0.5° |
| Conductance type | - | P |
| Dopant | - | Boron |
| Diameter | mm | 100 |
| Resistivity | Ω/cm2 | >10Ωcm |
| Thickness | um | 675 ± 25µm |
| TTV | um | ≤15 um |
| Warp | um | ≤35 um |
| (G)STIR | um | Customer standard |
| Site Flatness-STIR | um | Customer standard |
| Edge Exclusion Zone | mm | SEMI STD or Customer Request |
| LPD's | - | 0.3µm, <qty30 or Customer Request |
| Oxygen Concentration | ppma | <1E16/cc |
| Carbon Concentration | ppma | <1E16/cc |
| RRG | - | ≤15% |
| Front Surface | - | Polished |
| Back Surface | - | Polished |
| Edge Surface Condition | SEMI STD or Customer Request | |
| Primary Flat Length | mm | SEMI STD |
| Primary Flat Orientation(100/111) & Angle(°) | SEMI STD | |
| Secondary Flat Length | mm | SEMI STD |
| Secondary Flat Orientation(100/111) & Angle(°) | SEMI STD | |
| Laser mark | - | SEMI STD or Customer Request |
| The insulating thermal oxidation film thickness 300nm | ||
| Packaging | Packaged in a class 100 clean room environment, Heat-sealed plastic inner/aluminium foil outer bags, Vacuum Packing |
|
| If specific requirement by customer, will adjust accordingly | ||
How is Thermal Oxide Applied to Silicon Wafers?
Regularly there are three detail application:
1/Grown Dry Oxidation - By default dry oxide is grown on just one side of the wafer.
2/Wet Oxidation Grown - Wave guides technology and Silicon on Insulator wafers (SOI) can benefit greatly from our thick Thermal Oxide layers. We provide thermal oxide up to 15um in thickness. Grown on both sides of the wafers by default.
3/Deposited CVD - When you cannot oxidize Silicon, then you can use Chemical Vapor Deposition to deposit the oxide on top of your substrate.
Are You Looking for an Silicon Wafer?
PAM-XIAMEN is your go-to place for semiconductor wafers, including Silicon wafers, as we have been doing it for almost 30 years! Send us enquiry to learn more about the wafers that we offer and how we can help you with your next project. Our group team can give you technology support. send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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