XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| name | 4H N Type SIC Wafer |
| Grade | Research Grade |
| Description | SIC Wafer |
| Carrier Type | N Type |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | name | 4H N Type SIC Wafer |
| Grade | Research Grade | Description | SIC Wafer |
| Carrier Type | N Type | Diameter | (50.8 ± 0.38) mm |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm | Brand Name | PAM-XIAMEN |
| Place of Origin | China | ||
| High Light | silicon carbide wafer ，semi standard wafer | ||
4H N Type SiC (Silicon Carbide)Wafer, Research Grade,Epi Ready,2”Size
PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)waferfor electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available. Please contact us for more information.
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å | |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 | |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
4H N Type SiC Wafer, Research Grade,Epi Ready,2”Size
| SUBSTRATE PROPERTY | S4H-51-N-PWAM-330 S4H-51-N-PWAM-430 | |
| Description | Research Grade 4H SiC Substrate | |
| Polytype | 4H | |
| Diameter | (50.8 ± 0.38) mm | |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm | |
| Carrier Type | n-type | |
| Dopant | Nitrogen | |
| Resistivity (RT) | 0.012 – 0.0028 Ω·cm | |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) | |
| FWHM | <50 arcsec | |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 | |
| Surface Orientation | ||
| On axis | <0001>± 0.5° | |
| Off axis | 4°or 8° toward <11-20>± 0.5° | |
| Primary flat orientation | Parallel {1-100} ± 5° | |
| Primary flat length | 16.00 ± 1.70) mm | |
| Secondary flat orientation | Si-face:90° cw. from orientation flat ± 5° | |
| C-face:90° ccw. from orientation flat ± 5° | ||
| Secondary flat length | 8.00 ± 1.70 mm | |
| Surface Finish | Single or double face polished | |
| Packaging | Single wafer box or multi wafer box | |
| Usable area | ≥ 90 % | |
| Edge exclusion | 1 mm | |
sic crystal defects
Most of the defects which were observed in SiC were also observed in other crystalline materials. Like the dislocations, stacking faults (SFs), low angle boundaries (LABs) and twins. Some others appear in materials having the Zing- Blend or the Wurtzite structure, like the IDBs. Micropipes and inclusions from other phases mainly appear in SiC.
Refraction Index:
In optics the refractive index (or index of refraction) n of a substance (optical medium) is a number that describes how light, or any other radiation, propagates through that medium.
Refractive index of materials varies with the wavelength. This is called dispersion; it causes the splitting of white light in prisms and rainbows, and chromatic aberration in lenses. Inopaque media, the refractive index is a complex number: while the real part describes refraction, the imaginary part accounts for absorption.
The concept of refractive index is widely used within the full electromagnetic spectrum, from x-rays to radio waves. It can also be used with wave phenomena other than light (e.g.,sound). In this case the speed of sound is used instead of that of light and a reference medium other than vacuum must be chosen.
For infrared light refractive indices can be considerably higher. Germanium is transparent in a wavelength of 589 nanometers and has a refractive index of about 4, making it an important material for infrared optics.
SiC refraction index: 2.55 (infrared; all polytypes)
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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