XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | P Type GaAs Substrate Wafer |
| Wafer Diamter | 3 inch |
| Conduction Type | SC/p-type with Zn dope Available |
| Grade | Dummy Grade |
| usage | LED Application |
| keyword | GaAs wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | P Type GaAs Substrate Wafer | Wafer Diamter | 3 inch |
| Conduction Type | SC/p-type with Zn dope Available | Grade | Dummy Grade |
| usage | LED Application | keyword | GaAs wafer |
| Brand Name | PAM-XIAMEN | Place of Origin | China |
| High Light | gallium arsenide wafer ，p type silicon wafer | ||
P Type , GaAs(Gallium Arsenide) Substrate ,3”, Dummy Grade -Wafer Manufacturing
PAM-XIAMEN develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications. We are always dedicated to improve the quality of currently substates and develop large size substrates.
(GaAs)Gallium Arsenide Wafers for LED Applications
| Item | Specifications | |
| Conduction Type | SC/p-type with Zn dope Available | |
| Growth Method | VGF | |
| Dopant | Mg | |
| Wafer Diamter | 3, inch | |
| Crystal Orientation | (100)2°/6°/15° off (110) | |
| OF | EJ or US | |
| Carrier Concentration | E19 | |
| Resistivity at RT | — | |
| Mobility | 1500~3000cm2/V.sec
| |
| Etch Pit Density | <5000/cm2 | |
| Laser Marking | upon request
| |
| Surface Finish | P/E or P/P
| |
| Thickness | 220~450um
| |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
Properties of GaAs Crystal
| Properties | GaAs |
| Atoms/cm3 | 4.42 x 1022 |
| Atomic Weight | 144.63 |
| Breakdown Field | approx. 4 x 105 |
| Crystal Structure | Zincblende |
| Density (g/cm3) | 5.32 |
| Dielectric Constant | 13.1 |
| Effective Density of States in the Conduction Band, Nc (cm-3) | 4.7 x 1017 |
| Effective Density of States in the Valence Band, Nv (cm-3) | 7.0 x 1018 |
| Electron Affinity (V) | 4.07 |
| Energy Gap at 300K (eV) | 1.424 |
| Intrinsic Carrier Concentration (cm-3) | 1.79 x 106 |
| Intrinsic Debye Length (microns) | 2250 |
| Intrinsic Resistivity (ohm-cm) | 108 |
| Lattice Constant (angstroms) | 5.6533 |
| Linear Coefficient of Thermal Expansion, | 6.86 x 10-6 |
| ΔL/L/ΔT (1/deg C) | |
| Melting Point (deg C) | 1238 |
| Minority Carrier Lifetime (s) | approx. 10-8 |
| Mobility (Drift) | 8500 |
| (cm2/V-s) | |
| µn, electrons | |
| Mobility (Drift) | 400 |
| (cm2/V-s) | |
| µp, holes | |
| Optical Phonon Energy (eV) | 0.035 |
| Phonon Mean Free Path (angstroms) | 58 |
| Specific Heat | 0.35 |
| (J/g-deg C) | |
| Thermal Conductivity at 300 K | 0.46 |
| (W/cm-degC) | |
| Thermal Diffusivity (cm2/sec) | 0.24 |
| Vapor Pressure (Pa) | 100 at 1050 deg C; |
| 1 at 900 deg C |
| Wavelength | Index |
| (µm) | |
| 2.6 | 3.3239 |
| 2.8 | 3.3204 |
| 3 | 3.3169 |
| 3.2 | 3.3149 |
| 3.4 | 3.3129 |
| 3.6 | 3.3109 |
| 3.8 | 3.3089 |
| 4 | 3.3069 |
| 4.2 | 3.3057 |
| 4.4 | 3.3045 |
| 4.6 | 3.3034 |
| 4.8 | 3.3022 |
| 5 | 3.301 |
| 5.2 | 3.3001 |
| 5.4 | 3.2991 |
| 5.6 | 3.2982 |
| 5.8 | 3.2972 |
| 6 | 3.2963 |
| 6.2 | 3.2955 |
| 6.4 | 3.2947 |
| 6.6 | 3.2939 |
| 6.8 | 3.2931 |
| 7 | 3.2923 |
| 7.2 | 3.2914 |
| 7.4 | 3.2905 |
| 7.6 | 3.2896 |
| 7.8 | 3.2887 |
| 8 | 3.2878 |
| 8.2 | 3.2868 |
| 8.4 | 3.2859 |
| 8.6 | 3.2849 |
| 8.8 | 3.284 |
| 9 | 3.283 |
| 9.2 | 3.2818 |
| 9.4 | 3.2806 |
| 9.6 | 3.2794 |
| 9.8 | 3.2782 |
| 10 | 3.277 |
| 10.2 | 3.2761 |
| 10.4 | 3.2752 |
| 10.6 | 3.2743 |
| 10.8 | 3.2734 |
| 11 | 3.2725 |
| 11.2 | 3.2713 |
| 11.4 | 3.2701 |
| 11.6 | 3.269 |
| 11.8 | 3.2678 |
| 12 | 3.2666 |
| 12.2 | 3.2651 |
| 12.4 | 3.2635 |
| 12.6 | 3.262 |
| 12.8 | 3.2604 |
| 13 | 3.2589 |
| 13.2 | 3.2573 |
| 13.4 | 3.2557 |
| 13.6 | 3.2541 |
| Bulk modulus | 7.53·1011 dyn cm-2 |
| Melting point | 1240 °C |
| Specific heat | 0.33 J g-1°C -1 |
| Thermal conductivity | 0.55 W cm-1 °C -1 |
| Thermal diffusivity | 0.31cm2s-1 |
| Thermal expansion, linear | 5.73·10-6 °C -1 |
| Temperature dependence of thermal conductivity n-type sample, no (cm-3): 1. 1016; 2. 1.4·1016; 3. 1018; p-type sample, po (cm-3): 4. 3·1018; 5. 1.2·1019. |
| Temperature dependence of thermal conductivity (for high temperature) n-type sample, no (cm-3): 1. 7·1015; 2. 5·1016; 3. 4·1017; 4. 8·1018; p-type sample, po (cm-3): 5. 6·1019. |
| Temperature dependence of specific heat at constant pressure Ccl= 3kbN = 0.345 J g-1°C -1. N is the number of atoms in 1 g og GaAs. Dashed line: Cp= (4π2Ccl / 5θo3)·T3 for θo= 345 K. |
| Temperature dependence of linear expansion coefficient α |
| Melting point | Tm=1513 K |
| For 0 < P < 45 kbar | Tm= 1513 - 3.5P (P in kbar) |
| Saturated vapor pressure | (in Pascals) |
| 1173 K | 1 |
| 1323 K | 100 |
Are You Looking for GaAs substrate?
PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for GaAs wafers, send us enquiry today to learn more about how we can work with you to get you the GaAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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