XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Item | PAM-FS-GAN-50-SI |
| product name | SI-GaN GaN Substrates |
| Conduction Type | Semi-Insulating |
| Dimension | 50.8 ±1 mm |
| Thickness | 350 ±25 μm 430±25μm |
| other name | Gallium Nitride substrate |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Item | PAM-FS-GAN-50-SI | product name | SI-GaN GaN Substrates |
| Conduction Type | Semi-Insulating | Dimension | 50.8 ±1 mm |
| Thickness | 350 ±25 μm 430±25μm | other name | Gallium Nitride substrate |
| Brand Name | PAM-XIAMEN | Place of Origin | China |
| High Light | gallium nitride wafer ，gallium nitride gan | ||
2 Inch Freestanding Si-GaN GaN(Gallium Nitride) Substrates And Wafers
PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density.
PAM-XIAMEN offers full range of GaN and Related III-N Materials including GaN substrates of various orientations and electrical conductivity,crystallineGaN&AlN templates, and custom III-N epiwafers.
2inch Freestanding Si-GaN GaN Substrates
| Item | PAM-FS-GaN-50-SI |
| Dimension | 50.8 ±1 mm |
| Thickness | 350 ±25 μm 430±25μm |
| Orientation | C plane (0001) off angle toward M-axis 0.35 ±0.15° |
| Orientation Flat | (1-100) 0 ±0.5°, 16 ±1 mm |
| Secondary Orientation Flat | (11-20) 0 ±3°, 8 ±1 mm |
| Conduction Type | Semi-Insulating |
| Resistivity (300K) | >106 Ω·cm |
| TTV | ≤ 15 μm |
| BOW | -20 μm ≤ BOW ≤ 20 μm |
| Surface Roughness: | Front side: Ra<0.2nm, epi-ready; Back side: Fine Ground or polished. |
| Dislocation Density | From 1 x 105 to 5 x 10 6cm -2(calculated by CL)* |
| Macro Defect Density | < 2 cm-2 |
| Useable Area | > 90% (edge and macro defects exclusion) |
| Package | each in single wafer container, under nitrogen atmosphere, packed in class 100 clean room |
Application of GaN Substrate
Solid State Lighting:GaN devices are used as ultra high brightness light emitting diodes (LEDs), TVs, automobiles, and general lighting
DVD Storage: Blue laser diodes
Power Device: GaN devices are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites
Wireless Base Stations: RF power transistors
Wireless Broadband Access: high frequency MMICs,RF-Circuits MMICs
Pressure Sensors:MEMS
Heat Sensors: Pyro-electric detectors
Power Conditioning: Mixed signal GaN/Si Integration
Automotive Electronics: High temperature electronics
Power Transmission Lines: High voltage electronics
Frame Sensors: UV detectors
Solar Cells:GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride
(InGaN) alloys perfect for creating solar cell material. Because of this advantage, InGaN solar cells grown on GaN substrates are poised to become one of the most important new applications and growth market for GaN substrate wafers.
Ideal for HEMTs, FETs
GaN Schottky diode project: We accept custom spec of Schottky diodes fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types.
Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au.
| Remarks | Referens | ||
| Energy gaps, Eg | 3.28 eV | 0 K | Bougrov et al. (2001) |
| Energy gaps, Eg | 3.2 eV | 300 K | |
| Electron affinity | 4.1 eV | 300 K | |
| Conduction band | |||
| Energy separation between Γ valley and X valleys EΓ | 1.4 eV | 300 K | Bougrov et al. (2001) |
| Energy separation between Γ valley and L valleys EL | 1.6 ÷ 1.9 eV | 300 K | |
| Effective conduction band density of states | 1.2 x 1018 cm-3 | 300 K | |
| Valence band | |||
| Energy of spin-orbital splitting Eso | 0.02 eV | 300 K | |
| Effective valence band density of states | 4.1 x 1019 cm-3 | 300 K |
| Band structure of zinc blende(cubic) GaN. Important minima of the conduction band and maxima of the valence band. 300K; Eg=3.2 eVeV; EX= 4.6 eV; EL= 4.8-5.1 eV; Eso = 0.02 eV For details see Suzuki, Uenoyama & Yanase (1995) . |
| Brillouin zone of the face centered cubic lattice, the Bravais lattice of the diamond and zincblende structures. |
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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