XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
View Detail Information
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | Brand Name | PAM-XIAMEN |
| Place of Origin | China | ||
| High Light | gallium nitride wafer ，gallium nitride gan | ||
Freestanding GaN Substrate, N Type, Semi-Insulating For Rf,Power,Led And Ld
Freestanding GaN substrate
PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density.
Specification of Freestanding GaN substrate
Here shows detail specification:
2″(50.8mm)Free-standing (gallium nitride) GaN Substrate
| Item | PAM-FS-GaN50-N | PAM-FS-GaN50-SI |
| Conduction Type | N-type | Semi-insulating |
| Size | 2″(50.8)+/-1mm | |
| Thickness | 330-450um | |
| Orientation | C-axis(0001)+/-0.5° | |
| Primary Flat Location | (1-100)+/-0.5° | |
| Primary Flat Length | 16+/-1mm | |
| Secondary Flat Location | (11-20)+/-3° | |
| Secondary Flat Length | 8+/-1mm | |
| Resistivity(300K) | <0.5Ω·cm | >106Ω·cm |
| Dislocation Density | <5x106cm-2 | |
| Marco Defect Density | A grade<=2cm-2 B grade>2cm-2 | |
| TTV | <=15um | |
| BOW | <=20um | |
| Surface Finish | Front Surface:Ra<0.2nm.Epi-ready polished | |
| Back Surface:1.Fine ground | ||
| 2.Rough grinded | ||
| Usable Area | ≥ 90 % | |
1.5″(38.1mm)Free-standing GaN Substrate
| Item | PAM-FS-GaN38-N | PAM-FS-GaN38-SI | |
| Conduction Type | N-type | Semi-insulating | |
| Size | 1.5″(38.1)+/-0.5mm | ||
| Thickness | 330-450um | ||
| Orientation | C-axis(0001)+/-0.5o | ||
| Primary Flat Location | (1-100)+/-0.5o | ||
| Primary Flat Length | 12+/-1mm | ||
| Secondary Flat Location | (11-20)+/-3o | ||
| Secondary Flat Length | 6+/-1mm | ||
| Resistivity(300K) | <0.5Ω·cm | >106Ω·cm | |
| Dislocation Density | <5x106cm-2 | ||
| Marco Defect Density | A grade<=2cm-2 B grade>2cm-2 | ||
| TTV | <=15um | ||
| BOW | <=20um | ||
| Surface Finish | Front Surface:Ra<0.2nm.Epi-ready polished | ||
| Back Surface:1.Fine ground 2.Rough grinded | |||
| Usable Area | ≥ 90 % | ||
15mm,10mm,5mm Free-standing GaN Substrate
| Item | PAM-FS-GaN15-N PAM-FS-GaN10-N PAM-FS-GaN5-N | PAM-FS-GaN15-SI PAM-FS-GaN10-SI PAM-FS-GaN5-SI | |
| Conduction Type | N-type | Semi-insulating | |
| Size | 14.0mm*15mm 10.0mm*10.5mm 5.0*5.5mm | ||
| Thickness | 330-450um | ||
| Orientation | C-axis(0001)+/-0.5o | ||
| Primary Flat Location | |||
| Primary Flat Length | |||
| Secondary Flat Location | |||
| Secondary Flat Length | |||
| Resistivity(300K) | <0.5Ω·cm | >106Ω·cm | |
| Dislocation Density | <5x106cm-2 | ||
| Marco Defect Density | 0cm-2 | ||
| TTV | <=15um | ||
| BOW | <=20um | ||
| Surface Finish | Front Surface:Ra<0.2nm.Epi-ready polished | ||
| Back Surface:1.Fine ground | |||
| 2.Rough grinded | |||
| Usable Area | ≥ 90 % | ||
Note:
Validation Wafer:Considering convenience of usage, PAM-XIAMEN offer 2″ Sapphire Validation wafer for below 2″ size Freestanding GaN Substrate
Application of GaN Substrate
Solid State Lighting:GaN devices are used as ultra high brightness light emitting diodes (LEDs), TVs, automobiles, and general lighting
DVD Storage: Blue laser diodes
Power Device: GaN devices are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites
Ideal for III-Nitrides re-growth
Wireless Base Stations: RF power transistors
Wireless Broadband Access: high frequency MMICs,RF-Circuits MMICs
Pressure Sensors:MEMS
Heat Sensors: Pyro-electric detectors
Power Conditioning: Mixed signal GaN/Si Integration
Automotive Electronics: High temperature electronics
Power Transmission Lines: High voltage electronics
Frame Sensors: UV detectors
Solar Cells:GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride
(InGaN) alloys perfect for creating solar cell material. Because of this advantage, InGaN solar cells grown on GaN substrates are poised to become one of the most important new applications and growth market for GaN substrate wafers.
Ideal for HEMTs, FETs
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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