XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Delivery Time | 10,000 wafers/month |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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N Type , InP(Indium Phosphide) Substrate,3”, Prime Grade -Compound Semiconductor
P Type , High Purity Single Crystal Indium Phosphide Wafer , 4”, Prime Grade
P Type , VGF InP Wafer With CMP Polished , 2”, Prime Grade , Epi Ready
Semi-Insulating , Iron-Doped Indium Phosphide Substrate , 4”, Prime Grade
Product Specification
| Payment Terms | T/T | Delivery Time | 10,000 wafers/month |
| Brand Name | PAM-XIAMEN | Place of Origin | China |
| High Light | indium phosphide wafer ，epi ready wafer | ||
PAM-XIAMEN offers Compound Semiconductor InP wafer - Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic ("zinc blende") crystal structure, identical to that of GaAs and most of the III-V semiconductors.Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
| Item | Specifications | |||
| Dopant | N-type | N-type | P-type | SI-type |
| Conduction Type | Undoped | Sulphur | Zinc | lron |
| Wafer Diameter | 2" | |||
| Wafer Orientation | (100)±0.5° | |||
| Wafer Thickness | 350±25um | |||
| Primary Flat Length | 16±2mm | |||
| Secondary Flat Length | 8±1mm | |||
| Carrier Concentration | 3x1016cm-3 | (0.8-6)x1018cm-3 | (0.6-6)x1018cm-3 | N/A |
| Mobility | (3.5-4)x103cm2/V.s | (1.5-3.5)x103cm2/V.s | 50-70x103cm2/V.s | >1000cm2/V.s |
| Resistivity | N/A | N/A | N/A | N/A |
| EPD | <1000cm-2 | <500cm-2 | <1x103cm-2 | <5x103cm-2 |
| TTV | <10um | |||
| BOW | <10um | |||
| WARP | <12um | |||
| Laser marking | upon request | |||
| Suface finish | P/E, P/P | |||
| Epi ready | yes | |||
| Package | Single wafer container or cassette | |||
3" InP Wafer Specification
| Item | Specifications | |||
| Dopant | N-type | N-type | P-type | SI-type |
| Conduction Type | Undoped | Sulphur | Zinc | lron |
| Wafer Diameter | 3" | |||
| Wafer Orientation | (100)±0.5° | |||
| Wafer Thickness | 600±25um | |||
| Primary Flat Length | 16±2mm | |||
| Secondary Flat Length | 8±1mm | |||
| Carrier Concentration | ≤3x1016cm-3 | (0.8-6)x1018cm-3 | (0.6-6)x1018cm-3 | N/A |
| Mobility | (3.5-4)x103cm2/V.s | (1.5-3.5)x103cm2/V.s | 50-70x103cm2/V.s | >1000cm2/V.s |
| Resistivity | N/A | N/A | N/A | N/A |
| EPD | <1000cm-2 | <500cm-2 | <1x103cm-2 | <5x103cm-2 |
| TTV | <12um | |||
| BOW | <12um | |||
| WARP | <15um | |||
| Laser marking | upon request | |||
| Suface finish | P/E, P/P | |||
| Epi ready | yes | |||
| Package | Single wafer container or cassette | |||
| Item | Specifications | |||
| Dopant | N-type | N-type | P-type | SI-type |
| Conduction Type | Undoped | Sulphur | Zinc | lron |
| Wafer Diameter | 4" | |||
| Wafer Orientation | (100)±0.5° | |||
| Wafer Thickness | 600±25um | |||
| Primary Flat Length | 16±2mm | |||
| Secondary Flat Length | 8±1mm | |||
| Carrier Concentration | ≤3x1016cm-3 | (0.8-6)x1018cm-3 | (0.6-6)x1018cm-3 | N/A |
| Mobility | (3.5-4)x103cm2/V.s | (1.5-3.5)x103cm2/V.s | 50-70x103cm2/V.s | >1000cm2/V.s |
| Resistivity | N/A | N/A | N/A | N/A |
| EPD | <1000cm-2 | <500cm-2 | <1x103cm-2 | <5x103cm-2 |
| TTV | <15um | |||
| BOW | <15um | |||
| WARP | <15um | |||
| Laser marking | upon request | |||
| Suface finish | P/E, P/P | |||
| Epi ready | yes | |||
| Package | Single wafer container or cassette | |||
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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