XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | Undoped InAs Wafer |
| Wafer Diamter | 3 inch |
| Conduction Type | N Type |
| Grade | Prime Grade |
| Wafer Thickness | 600±25um |
| keyword | Indium arsenide InAs wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
View Detail Information
Explore similar products
P Type , Single Crystal InAs Substrate , 3”, Prime Grade
P Type , Zn-doped Single Crystal InAs Wafer , 2”, Test Grade
P Type , Zn-doped InAs Wafer , 2”, Prime Grade , Epi Ready
Undoped InAs Semiconductor Wafer , 3”, Dummy Grade
Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | Undoped InAs Wafer | Wafer Diamter | 3 inch |
| Conduction Type | N Type | Grade | Prime Grade |
| Wafer Thickness | 600±25um | keyword | Indium arsenide InAs wafer |
| Brand Name | PAM-XIAMEN | Place of Origin | China |
| High Light | indium arsenide wafer ，n type wafer | ||
Undoped InAs Semiconductor Wafer , 3”, Prime Grade
PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111),(100) or (110). PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.
3" InAs Wafer Specification
| Item | Specifications |
| Dopant | Undoped |
| Conduction Type | N-type |
| Wafer Diameter | 3" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 600±25um |
| Primary Flat Length | 22±2mm |
| Secondary Flat Length | 11±1mm |
| Carrier Concentration | 5x1016cm-3 |
| Mobility | ≥2x104cm2/V.s |
| EPD | <5x104cm-2 |
| TTV | <12um |
| BOW | <12um |
| WARP | <15um |
| Laser marking | upon request |
| Suface finish | P/E, P/P |
| Epi ready | yes |
| Package | Single wafer container or cassette |
What is a InAs test Wafer?
Most test wafers are wafers which have fallen out of prime specifications. Test wafers may be used to run marathons, test equipment and for high-end R & D. They are often a cost-effective alternative to prime wafers.
| Infrared refractive index | ≈3.51 (300 K) |
| Radiative recombination coefficient | 1.1·10-10 cm3/s |
| Long-wave TO phonon energy hνTO | ≈27 meV (300 K) |
| Long-wave LO phonon energy hνLO | ≈29 meV (300 K) |
| Refractive index n versus photon energy. Solid curve is theoretical calculation. Points represent experimental data, 300 K. |
For 3.75 µm < λ < 33 µm
n = [11.1 + 0.71/(1-6.5·λ-2) + 2.75/(1-2085·λ-2) - 6·10-4·λ2)]1/2,
where λ is the wavelength in µn (300 K)
| Normal incidence reflectivity versus photon energy, 300 K |
| Absorption coefficient near the intrinsic absorption edge for n-InAs. T=4.2 K |
| Absorption coefficient versus photon energy for different donor concentration, 300 K n (cm-3): 1. 3.6·1016, 2. 6·1017, 3. 3.8·1018. |
A ground state Rydberg energy RX1= 3.5 meV
| Absorption coefficient versus photon energy, T = 300 K |
| Free carrier absorption versus wavelength at different electron concentrations. T=300 K. no (cm-3): 1. 3.9·1018; 2. 7.8·1017; 3. 2.5·1017; 4. 2.8·1016; |
Are You Looking for an InAs Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including InAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
Get in touch with us
Leave a Message, we will call you back quickly!