XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | single crystal InAs Wafer |
| Wafer Diamter | 2 inch |
| Conduction Type | N Type |
| Grade | Test Grade |
| Wafer Thickness | 500±25um |
| keyword | Indium arsenide wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | single crystal InAs Wafer | Wafer Diamter | 2 inch |
| Conduction Type | N Type | Grade | Test Grade |
| Wafer Thickness | 500±25um | keyword | Indium arsenide wafer |
| Brand Name | PAM-XIAMEN | Place of Origin | China |
| High Light | indium arsenide wafer ，n type wafer | ||
Undoped InAs Substrate , 2”, Test Grade -Indium Arsenide Wafer Supplier
PAM-XIAMEN provides single crystal InAs(Indium arsenide) wafer for infrared detectors, photovoltaic photodiodes detectors, diode lasers in lower noise or higher-power applications at room temperature. in diameter up to 4 inch. Indium Arsenide ( InAs ) crystal is formed by two elements , Indium and Arsenide , growth by Liquid Encapsulated Czochralski ( LEC ) method or VGF method . InAs wafer is is similar to gallium arsenide and is a direct bandgap material.
Indium arsenide is sometimes used together with indium phosphide. Alloyed with gallium arsenide it forms indium gallium arsenide - a material with band gap dependent on In/Ga ratio, a method principally similar to alloying indium nitride with gallium nitride to yield indium gallium nitride. PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.
2" InAs Wafer Specification
| Item | Specifications |
| Dopant | Undoped |
| Conduction Type | N-type |
| Wafer Diameter | 2" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 500±25um |
| Primary Flat Length | 16±2mm |
| Secondary Flat Length | 8±1mm |
| Carrier Concentration | 5x1016cm-3 |
| Mobility | ≥2x104cm2/V.s |
| EPD | <5x104cm-2 |
| TTV | <10um |
| BOW | <10um |
| WARP | <12um |
| Laser marking | upon request |
| Suface finish | P/E, P/P |
| Epi ready | yes |
| Package | Single wafer container or cassette |
What is the InAs Process?
InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.
| Energy gap | 0.354 eV |
| Energy separation (EΓL) between Γ and L valleys | 0.73 eV |
| Energy separation (EΓX) between Γ and X valleys | 1.02 eV |
| Energy spin-orbital splitting | 0.41 eV |
| Intrinsic carrier concentration | 1·1015 cm-3 |
| Intrinsic resistivity | 0.16 Ω·cm |
| Effective conduction band density of states | 8.7·1016 cm-3 |
| Effective valence band density of states | 6.6·1018 cm-3 |
| Band structure and carrier concentration of InAs. Important minima of the conduction band and maxima of the valence band. Eg= 0.35 eV EL= 1.08 eV EX= 1.37 eV Eso = 0.41 eV |
Eg = 0.415 - 2.76·10-4·T2/(T+83) (eV),
where T is temperature in degrees K (0 <T < 300).
Nc≈1.68·1013·T3/2 (cm-3).
Nv≈ 1.27·1015·T3/2(cm-3).
| The temperature dependences of the intrinsic carrier concentration. |
| Fermi level versus temperature for different concentrations of shallow donors and acceptors. |
Eg≈Eg(0) + 4.8·10-3P (eV)
EL≈ EL(0) + 3.2·10-3P (eV)
where P is pressure in kbar
| Energy gap narrowing versus donor (Curve 1) and acceptor (Curve 2 ) doping density. Curves are calculated according Points show experimental results for n-InAs |
ΔEg = 14.0·10-9·Nd1/3 + 1.97·10-7·Nd1/4 + 57.9·10-12·Nd1/2 (eV)
ΔEg = 8.34·10-9·Na1/3 + 2.91·10-7·Na1/4 + 4.53·10-12·Na1/2 (eV)
Electrons:
| Electron effective mass versus electron concentration |
| For Γ-valley | mΓ = 0.023mo |
| Nonparabolicity: E(1+αE) = h2k2/(2mΓ) | α = 1.4 (eV-1) |
| In the L-valley effective mass of density of states | mL=0.29mo |
| In the X-valley effective mass of density of states | mX=0.64mo |
Holes:
| Heavy | mh = 0.41mo |
| Light | mlp = 0.026mo |
| Split-off band | mso = 0.16mo |
Effective mass of density of states mv = 0.41mo
≥ 0.001(eV): Se, S, Te, Ge, Si, Sn, Cu
| Sn | Ge | Si | Cd | Zn |
| 0.01 | 0.014 | 0.02 | 0.015 | 0.01 |
Are You Looking for an InAs Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including InAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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