XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | InAs Substrate Wafer |
| Wafer Diamter | 3 inch |
| Conduction Type | N Type |
| Grade | Prime Grade |
| Wafer Thickness | 600±25um |
| keyword | Indium Arsenide InAs wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | InAs Substrate Wafer | Wafer Diamter | 3 inch |
| Conduction Type | N Type | Grade | Prime Grade |
| Wafer Thickness | 600±25um | keyword | Indium Arsenide InAs wafer |
| Brand Name | PAM-XIAMEN | Place of Origin | China |
| High Light | indium arsenide wafer ，3 inch wafer | ||
N Type , InAs( Indium Arsenide ) Substrate , 3”, Prime Grade
PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111),(100) or (110). PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.
3" InAs Wafer Specification
| Item | Specifications | |
| Dopant | Stannum | Sulphur |
| Conduction Type | N-type | N-type |
| Wafer Diameter | 3" | |
| Wafer Orientation | (100)±0.5° | |
| Wafer Thickness | 600±25um | |
| Primary Flat Length | 22±2mm | |
| Secondary Flat Length | 11±1mm | |
| Carrier Concentration | (5-20)x1017cm-3 | (1-10)x1017cm-3 |
| Mobility | 7000-20000cm2/V.s | 6000-20000cm2/V.s |
| EPD | <5x104cm-2 | <3x104cm-2 |
| TTV | <12um | |
| BOW | <12um | |
| WARP | <15um | |
| Laser marking | upon request | |
| Suface finish | P/E, P/P | |
| Epi ready | yes | |
| Package | Single wafer container or cassette | |
What is the InAs Process?
InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.
| Breakdown field | ≈4·104 V cm-1 |
| Mobility of electrons | ≤4·104 cm2V-1s-1 |
| Mobility of holes | ≤5·102 cm2 V-1s-1 |
| Diffusion coefficient of electrons | ≤103 cm2s-1 |
| Diffusion coefficient of holes | ≤13 cm2 s-1 |
| Electron thermal velocity | 7.7·105 m s-1 |
| Hole thermal velocity | 2·105 m s-1 |
| Electron Hall mobility versus temperature for different electron concentration: full triangles no= 4·1015 cm-3, circles no= 4·1016cm-3, open triangles no= 1.7·1016cm-3. Solid curve-calculation for pure InAs. | ||||||||||||||||||||||||||||||||
| Electron Hall mobility versus electron concentration. T = 77 K. | ||||||||||||||||||||||||||||||||
| Electron Hall mobility versus electron concentration T = 300 K | ||||||||||||||||||||||||||||||||
| Electron Hall mobility (R·σ) in compensated material
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| Electron Hall mobility versus transverse magnetic field, T = 77 K. Nd (cm-3): 1. 1.7·1016; 2. 5.8·1016. |
At T = 300 K the electron Hall factor in pure n-InAs rH ~1.3.
| Hole Hall mobility (R·σ) versus temperature for different acceptor densities. Hole concentration at 300 K po (cm-3): 1. 5.7·1016; 2. 2.6·1017; 3. 4.2·1017; 4. 1.3·1018. |
| Hall coefficient versus temperature for different acceptor densities. Hole concentration at 300 K po (cm-3): 1. 5.7·1016; 2. 2.6·1017; 3. 4.2·1017; 4. 1.3·1018. |
| Steady state field dependence of the electron drift velocity, 300 K, F || (100). Theoretical calculation |
| Field dependence of the electron drift velocity at different transverse magnetic fields for long (microsecond) pulses. Experimental results, 77 K Magnetic field B(T): 1. 0.0; 2. 0.3; 3. 0.9; 4. 1.5. |
| Field dependence of the electron drift velocity, 77 K. Solid lines show results of theoretical calculation for different non-parabolicity α (eV-1): 1. 2.85; 2. 2.0; 3. 1.5. Points show experimental results for very short (pico-second pulses) |
| The dependence of ionization rates for electrons αi and holes βi versus 1/F, T =77K |
αi = αoexp(-Fno/ F)
αo = 1.8·105 cm-1;
Fno = 1.6·105 V cm-1 (77 K)
βi = βoexp(-Fpo/ F)
At 77 K
| 1.5·104 V cm-1 < F < 3·104 V cm-1 | 3·104 V cm-1 < F < 6·104 V cm-1 |
| βo = 4.7·105 cm-1; | βo = 4.5·106 cm-1; |
| Fpo = 0.85·105 V cm-1. | Fpo = 1.54·105 V cm-1 |
| Generation rate g versus electric field for relatively low fields, T = 77 K. Solid line shows result of calculation. Experimental results: open and full circles -undoped InAs, open triangles - compensated InAs. |
| Breakdown voltage and breakdown field versus doping density for an abrupt p-n junction, 77 K. |
| Pure n-type material (no =2·10-15cm-3) | |
| The longest lifetime of holes | τp ~ 3·10-6 s |
| Diffusion length Lp | Lp ~ 10 - 20 µm. |
| Pure p-type material | |
| The longest lifetime of electrons | τn ~ 3·10-8 s |
| Diffusion length Ln | Ln ~ 30 - 60 µm |
Characteristic surface recombination rates (cm s-1) 102 - 104.
| 77 K | 1.2·10-9 cm3s-1 |
| 298 K | 1.1·10-10 cm3s-1 |
| 300 K | 2.2·10-27cm3s-1 |
Are You Looking for an InAs Wafer?
PAM-XIAMEN is your go-to place for everything wafers, including InAs wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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