XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | N Type InSb Wafer |
| Wafer Diamter | 4 inch |
| application | photoelectromagnetic device |
| Grade | Prime Grade |
| Wafer Thickness | 1000.0±0.5mm |
| keyword | Indium Antimonide wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | N Type InSb Wafer | Wafer Diamter | 4 inch |
| application | photoelectromagnetic device | Grade | Prime Grade |
| Wafer Thickness | 1000.0±0.5mm | keyword | Indium Antimonide wafer |
| Brand Name | PAM-XIAMEN | Place of Origin | China |
| High Light | indium antimonide wafer ，polished silicon wafer | ||
N Type , Te-doped InSb Wafer , 4”, Prime Grade -Powerway Wafer
PAM-XIAMEN provides single crystal InSb(Indium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. Indium Antimonide (InSb) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness.PAM-XIAMEN can provide epi ready grade InSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.
N Type, InSb Wafer, 4”, Prime Grade
| Wafer Specification | |
| Item | Specifications |
| Wafer Diameter |
4″ 1000.0±0.5mm |
| Crystal Orientation |
4″ (111)AorB±0.1° |
| Thickness |
4″ 1000±25um |
| Primary flat length |
4″ 32.5±2.5mm |
| Secondary flat length |
4″ 18±1mm |
| Surface Finish | P/E, P/P |
| Package | Epi-Ready,Single wafer container or CF cassette |
| Electrical and Doping Specification | |||
| Conduction Type | n-type | n-type | n-type |
| Dopant | Tellurium | Low tellurium | High tellurium |
| EPD cm-2 | ≤50 | ||
| Mobility cm² V-1s-1 | ≥2.5*104 | ≥2.5*105 | Not Specified |
| Carrier Concentration cm-3 | (1-7)*1017 | 4*1014-2*1015 | ≥1*1018 |
Thermal properties of InSb Wafer
| Bulk modulus | 4.7·1011 dyn cm-1 |
| Melting point | 527 °C |
| Specific heat | 0.2 J g-1°C-1 |
| Thermal conductivity | 0.18 W cm-1 °C-1 |
| Thermal diffusivity | 0.16 cm2 s-1 |
| Thermal expansion, linear | 5.37·10-6 °C-1 |
| Temperature dependence of thermal conductivity n-InSb. Electron concentration at 78 K n (cm-3): 1. 2·1014; 2. 4.8·1016; 3. 4·1018. Solid line shows the temperature dependence of thermal conductivity at high temperatures |
| Temperature dependence of thermal conductivity p-InSb. Electron concentration at 78K p (cm-3): 1. 2.7·1014; 2. 5.3·1015; 3. 7.2·1017; 4. 6·1018. |
| Temperature dependence of specific heat at constant pressure. |
| Temperature dependence of linear expansion coefficient (low temperatures) |
| Temperature dependence of linear expansion coefficient (high temperatures) |
| Temperature dependence of Sb saturation vapor pressure |
Melting point Tm = 800K.
PAM-XIAMEN is your go-to place for everything wafers, including InSb wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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