XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | N Type GaAs Substrate Wafer |
| Wafer Diamter | 3 inch |
| Package | Single wafer container or cassette |
| Grade | Dummy Grade |
| Wafer Thickness | 220~450um |
| keyword | GaAs wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | N Type GaAs Substrate Wafer | Wafer Diamter | 3 inch |
| Package | Single wafer container or cassette | Grade | Dummy Grade |
| Wafer Thickness | 220~450um | keyword | GaAs wafer |
| Brand Name | PAM-XIAMEN | Place of Origin | China |
| High Light | gallium arsenide wafer ，n type silicon wafer | ||
N Type , Si-Doped GaAs(Gallium Arsenide) Substrate , 3”, Dummy Grade
PAM-XIAMEN Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer. We has used advanced crystal growth technology, vertical gradient freeze(VGF) and (GaAs)Gallium Arsenide wafer processing technology. The required electrical properties are obtained by adding dopants such as silicon or zinc. The result is n-type or p-type high-resistance (>10^7 ohm.cm) or low-resistance (<10 - 2 ohm.cm) semiconductors. The wafer surfaces are generally epi-ready (extremely low contamination) i.e. their quality is suitable for direct use in epitaxial processes.
(GaAs)Gallium Arsenide Wafers for LED Applications
| Item | Specifications | |
| Conduction Type | SC/n-type | |
| Growth Method | VGF | |
| Dopant | Silicon | |
| Wafer Diamter | 3, inch | |
| Crystal Orientation | (100)2°/6°/15° off (110) | |
| OF | EJ or US | |
| Carrier Concentration | (0.4~2.5)E18/cm3
| |
| Resistivity at RT | (1.5~9)E-3 Ohm.cm | |
| Mobility | 1500~3000cm2/V.sec
| |
| Etch Pit Density | <5000/cm2 | |
| Laser Marking | upon request
| |
| Surface Finish | P/E or P/P
| |
| Thickness | 220~450um
| |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
(GaAs)Gallium Arsenide Wafers for LD Applications
| Item | Specifications | Remarks |
| Conduction Type | SC/n-type | |
| Growth Method | VGF | |
| Dopant | Silicon | |
| Wafer Diamter | 3, inch | Ingot or as-cut available |
| Crystal Orientation | (100)2°/6°/15°off (110) | Other misorientation available |
| OF | EJ or US | |
| Carrier Concentration | (0.4~2.5)E18/cm3 | |
| Resistivity at RT | (1.5~9)E-3 Ohm.cm | |
| Mobility | 1500~3000 cm2/V.sec | |
| Etch Pit Density | <500/cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/E or P/P | |
| Thickness | 220~350um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
Properties of GaAs Crystal
| Properties | GaAs | |
| Atoms/cm3 | 4.42 x 1022 | |
| Atomic Weight | 144.63 | |
| Breakdown Field | approx. 4 x 105 | |
| Crystal Structure | Zincblende | |
| Density (g/cm3) | 5.32 | |
| Dielectric Constant | 13.1 | |
| Effective Density of States in the Conduction Band, Nc (cm-3) | 4.7 x 1017 | |
| Effective Density of States in the Valence Band, Nv (cm-3) | 7.0 x 1018 | |
| Electron Affinity (V) | 4.07 | |
| Energy Gap at 300K (eV) | 1.424 | |
| Intrinsic Carrier Concentration (cm-3) | 1.79 x 106 | |
| Intrinsic Debye Length (microns) | 2250 | |
| Intrinsic Resistivity (ohm-cm) | 108 | |
| Lattice Constant (angstroms) | 5.6533 | |
| Linear Coefficient of Thermal Expansion, | 6.86 x 10-6 | |
| ΔL/L/ΔT (1/deg C) | ||
| Melting Point (deg C) | 1238 | |
| Minority Carrier Lifetime (s) | approx. 10-8 | |
| Mobility (Drift) | 8500 | |
| (cm2/V-s) | ||
| µn, electrons | ||
| Mobility (Drift) | 400 | |
| (cm2/V-s) | ||
| µp, holes | ||
| Optical Phonon Energy (eV) | 0.035 | |
| Phonon Mean Free Path (angstroms) | 58 | |
| Specific Heat | 0.35 | |
| (J/g-deg C) | ||
| Thermal Conductivity at 300 K | 0.46 | |
| (W/cm-degC) | ||
| Thermal Diffusivity (cm2/sec) | 0.24 | |
| Vapor Pressure (Pa) | 100 at 1050 deg C; | |
| 1 at 900 deg C |
| Wavelength | Index |
| (µm) | |
| 2.6 | 3.3239 |
| 2.8 | 3.3204 |
| 3 | 3.3169 |
| 3.2 | 3.3149 |
| 3.4 | 3.3129 |
| 3.6 | 3.3109 |
| 3.8 | 3.3089 |
| 4 | 3.3069 |
| 4.2 | 3.3057 |
| 4.4 | 3.3045 |
| 4.6 | 3.3034 |
| 4.8 | 3.3022 |
| 5 | 3.301 |
| 5.2 | 3.3001 |
| 5.4 | 3.2991 |
| 5.6 | 3.2982 |
| 5.8 | 3.2972 |
| 6 | 3.2963 |
| 6.2 | 3.2955 |
| 6.4 | 3.2947 |
| 6.6 | 3.2939 |
| 6.8 | 3.2931 |
| 7 | 3.2923 |
| 7.2 | 3.2914 |
| 7.4 | 3.2905 |
| 7.6 | 3.2896 |
| 7.8 | 3.2887 |
| 8 | 3.2878 |
| 8.2 | 3.2868 |
| 8.4 | 3.2859 |
| 8.6 | 3.2849 |
| 8.8 | 3.284 |
| 9 | 3.283 |
| 9.2 | 3.2818 |
| 9.4 | 3.2806 |
| 9.6 | 3.2794 |
| 9.8 | 3.2782 |
| 10 | 3.277 |
| 10.2 | 3.2761 |
| 10.4 | 3.2752 |
| 10.6 | 3.2743 |
| 10.8 | 3.2734 |
| 11 | 3.2725 |
| 11.2 | 3.2713 |
| 11.4 | 3.2701 |
| 11.6 | 3.269 |
| 11.8 | 3.2678 |
| 12 | 3.2666 |
| 12.2 | 3.2651 |
| 12.4 | 3.2635 |
| 12.6 | 3.262 |
| 12.8 | 3.2604 |
| 13 | 3.2589 |
| 13.2 | 3.2573 |
| 13.4 | 3.2557 |
| 13.6 | 3.2541 |
What is GaAs wafer?
Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct band gap semiconductor with a zinc blende crystal structure.
GaAs wafer is an important semiconducor material. It belongs to group III-V compound semiconductor. It is a sphalerite type lattice structure with a lattice constant of 5.65x 10-10m, a melting point of 1237 ℃ and a band gap of 1.4 EV. Gallium arsenide can be made into semi insulating high resistance materials with resistivity higher than silicon and germanium by more than three orders of magnitude, which can be used to make integrated circuit substrate, infrared detector, γ photon detector, etc. Because its electron mobility is 5-6 times larger than that of silicon, it has been widely used in microwave devices and high-speed digital circuits. The semiconductor device made of GaAs has the advantages of high frequency, high temperature and low temperature, low noise and strong radiation resistance. In addition, it can also be used to make bulk effect devices.
What is the Optical properties of GaAs Wafer?
| Infrared refractive index | 3.3 |
| Radiative recombination coefficient | 7·10-10 cm3/s |
Infrared refractive index
n = k1/2 = 3.255·(1 + 4.5·10-5T)
for 300 K n= 3.299
Long-wave TO phonon energy
hνTO = 33.81·(1 - 5.5·10-5 T) (meV)
for 300 K hνTO = 33.2 meV
Long-wave LO phonon energy
hνLO= 36.57·(1 - 4·10-5 T) (meV)
for 300 K hνLO = 36.1 meV
| Refractive index n versus photon energy for a high-purity GaAs.(no~5·1013 cm-3). Solid curve is deduced from two-beam reflectance measurements at 279 K. Dark circles are obtained from refraction measurements. Light circles are calculated from Kramers-Kronig analysis |
| Normal incidence reflectivity versus photon energy. . |
| Intrinsic absorption coefficient near the intrinsic absorption edge for different temperatures. |
A ground state Rydberg energy RX1= 4.2 meV
| Intrinsic absorption edge at 297 K at different doping levels. n-type doping |
| Intrinsic absorption edge at 297 K at different doping levels. p-type doping |
| The absorption coefficient versus photon energy from intrinsic edge to 25 eV. |
| Free carrier absorption versus wavelength at different doping levels, 296 K Conduction electron concentrations are: 1. 1.3·1017cm-3; 2. 4.9·1017cm-3; 3. 1018cm-3; 4. 5.4·1018cm-3 |
| Free carrier absorption versus wavelength at different temperatures. no = 4.9·1017cm-3 Temperatures are: 1. 100 K; 2. 297 K; 3. 443 K. |
At 300 K
For λ~2 µm α=6·10-18 no (cm-1) (no - in cm-1)
For λ > 4µm and 1017<no<1018cm-3α ≈ 7.5·10-20no·λ3 (cm-1) (no - in cm-3, λ - µm)
Are You Looking for GaAs substrate?
PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for GaAs wafers, send us enquiry today to learn more about how we can work with you to get you the GaAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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