XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Delivery Time | 5-50 working days |
| name | GaAs wafer |
| application | LD and Microelectronics |
| size | 2-6 inch |
| type | Gallium Arsenide Wafer |
| Dopant | Silicon |
| Thickness | 220~450um |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Delivery Time | 5-50 working days |
| name | GaAs wafer | application | LD and Microelectronics |
| size | 2-6 inch | type | Gallium Arsenide Wafer |
| Dopant | Silicon | Thickness | 220~450um |
| Brand Name | PAM-XIAMEN | Place of Origin | China |
| High Light | gallium arsenide wafer ，n type silicon wafer | ||
(GaAs) Gallium Arsenide Wafers
PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.
(GaAs)Gallium Arsenide Wafers for LED Applications
| Item | Specifications | Remarks |
| Conduction Type | SC/n-type | SC/p-type with Zn dope Available |
| Growth Method | VGF | |
| Dopant | Silicon | Zn available |
| Wafer Diamter | 2, 3 & 4 inch | Ingot or as-cut availalbe |
| Crystal Orientation | (100)2°/6°/15° off (110) | Other misorientation available |
| OF | EJ or US | |
| Carrier Concentration | (0.4~2.5)E18/cm3 | |
| Resistivity at RT | (1.5~9)E-3 Ohm.cm | |
| Mobility | 1500~3000cm2/V.sec | |
| Etch Pit Density | <5000/cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/E or P/P | |
| Thickness | 220~450um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
(GaAs)Gallium Arsenide Wafers for LD Applications
| Item | Specifications | Remarks |
| Conduction Type | SC/n-type | |
| Growth Method | VGF | |
| Dopant | Silicon | |
| Wafer Diamter | 2, 3 & 4 inch | Ingot or as-cut available |
| Crystal Orientation | (100)2°/6°/15°off (110) | Other misorientation available |
| OF | EJ or US | |
| Carrier Concentration | (0.4~2.5)E18/cm3 | |
| Resistivity at RT | (1.5~9)E-3 Ohm.cm | |
| Mobility | 1500~3000 cm2/V.sec | |
| Etch Pit Density | <500/cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/E or P/P | |
| Thickness | 220~350um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
| Conduction Type | Insulating | |
| Growth Method | VGF | |
| Dopant | Undoped | |
| Wafer Diamter | 2, 3 & 4 inch | Ingot available |
| Crystal Orientation | (100)+/- 0.5° | |
| OF | EJ, US or notch | |
| Carrier Concentration | n/a | |
| Resistivity at RT | >1E7 Ohm.cm | |
| Mobility | >5000 cm2/V.sec | |
| Etch Pit Density | <8000 /cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/P | |
| Thickness | 350~675um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
| Conduction Type | Semi-insulating | |
| Grow Method | VGF | |
| Dopant | Undoped | |
| Type | N | |
| Diamater(mm) | 150±0.25 | |
| Orientation | (100)0°±3.0° | |
| NOTCH Orientation | 〔010〕±2° | |
| NOTCH Deepth(mm) | (1-1.25)mm 89°-95° | |
| Carrier Concentration | N/A | |
| Resistivity(ohm.cm) | ＞1.0×107 or 0.8-9 x10-3 | |
| Mobility(cm2/v.s) | N/A | |
| Dislocation | N/A | |
| Thickness(µm) | 675±25 | |
| Edge Exclusion for Bow and Warp(mm) | N/A | |
| Bow(µm) | N/A | |
| Warp(µm) | ≤20.0 | |
| TTV(µm) | ≤10.0 | |
| TIR(µm) | ≤10.0 | |
| LFPD(µm) | N/A | |
| Polishing | P/P Epi-Ready |
2″(50.8mm) LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications
| Item | Specifications | Remarks |
| Diamater(mm) | Ф 50.8mm ± 1mm | |
| Thickness | 1-2um or 2-3um | |
| Marco Defect Density | ≤ 5 cm-2 | |
| Resistivity(300K) | >108 Ohm-cm | |
| Carrier | ＜0.5ps | |
| Dislocation Density | <1x106cm-2 | |
| Useable Surface Area | ≥80% | |
| Polishing | Single side polished | |
| Substrate | GaAs Substrate |
(GaAs) Gallium Arsenide Wafers
PWAM Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer.We has used advanced crystal growth technology,vertical gradient freeze(VGF) and GaAs wafer processing technology,established a production line from crystal growth, cutting, grinding to polishing processing and built a 100-class clean room for wafer cleaning and packaging. Our GaAs wafer include 2~6 inch ingot/wafers for LED,LD and Microelectronics applications.We are always dedicated to improve the quality of currently substates and develop large size substrates.
(GaAs)Gallium Arsenide Wafers for LED Applications
| Item | Specifications | Remarks |
| Conduction Type | SC/n-type | SC/p-type with Zn dope Available |
| Growth Method | VGF | |
| Dopant | Silicon | Zn available |
| Wafer Diamter | 2, 3 & 4 inch | Ingot or as-cut availalbe |
| Crystal Orientation | (100)2°/6°/15° off (110) | Other misorientation available |
| OF | EJ or US | |
| Carrier Concentration | (0.4~2.5)E18/cm3 | |
| Resistivity at RT | (1.5~9)E-3 Ohm.cm | |
| Mobility | 1500~3000cm2/V.sec | |
| Etch Pit Density | <5000/cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/E or P/P | |
| Thickness | 220~450um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
(GaAs)Gallium Arsenide Wafers for LD Applications
| Item | Specifications | Remarks |
| Conduction Type | SC/n-type | |
| Growth Method | VGF | |
| Dopant | Silicon | |
| Wafer Diamter | 2, 3 & 4 inch | Ingot or as-cut available |
| Crystal Orientation | (100)2°/6°/15° off (110) | Other misorientation available |
| OF | EJ or US | |
| Carrier Concentration | (0.4~2.5)E18/cm3 | |
| Resistivity at RT | (1.5~9)E-3 Ohm.cm | |
| Mobility | 1500~3000 cm2/V.sec | |
| Etch Pit Density | <500/cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/E or P/P | |
| Thickness | 220~350um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
| Conduction Type | Insulating | |
| Growth Method | VGF | |
| Dopant | Undoped | |
| Wafer Diamter | 2, 3 & 4 inch | Ingot available |
| Crystal Orientation | (100)+/- 0.5° | |
| OF | EJ, US or notch | |
| Carrier Concentration | n/a | |
| Resistivity at RT | >1E7 Ohm.cm | |
| Mobility | >5000 cm2/V.sec | |
| Etch Pit Density | <8000 /cm2 | |
| Laser Marking | upon request | |
| Surface Finish | P/P | |
| Thickness | 350~675um | |
| Epitaxy Ready | Yes | |
| Package | Single wafer container or cassette | |
6″ (150mm)(GaAs)Gallium Arsenide Wafers,Semi-insulating for Microelectronics Applications
| Item | Specifications | Remarks |
| Conduction Type | Semi-insulating | |
| Grow Method | VGF | |
| Dopant | Undoped | |
| Type | N | |
| Diamater(mm) | 150±0.25 | |
| Orientation | (100)0°±3.0° | |
| NOTCH Orientation | 〔010〕±2° | |
| NOTCH Deepth(mm) | (1-1.25)mm 89°-95° | |
| Carrier Concentration | N/A | |
| Resistivity(ohm.cm) | ＞1.0×107 or 0.8-9 x10-3 | |
| Mobility(cm2/v.s) | N/A | |
| Dislocation | N/A | |
| Thickness(µm) | 675±25 | |
| Edge Exclusion for Bow and Warp(mm) | N/A | |
| Bow(µm) | N/A | |
| Warp(µm) | ≤20.0 | |
| TTV(µm) | ≤10.0 | |
| TIR(µm) | ≤10.0 | |
| LFPD(µm) | N/A | |
| Polishing | P/P Epi-Ready |
2″ (50.8mm)LT-GaAs (Low Temperature-Grown Galium Arsenide) Wafer Specifications
| Item | Specifications | Remarks |
| Diamater(mm) | Ф 50.8mm ± 1mm | |
| Thickness | 1-2um or 2-3um | |
| Marco Defect Density | ≤ 5 cm-2 | |
| Resistivity(300K) | >108 Ohm-cm | |
| Carrier | ＜0.5ps | |
| Dislocation Density | <1x106cm-2 | |
| Useable Surface Area | ≥80% | |
| Polishing | Single side polished | |
| Substrate | GaAs Substrate |
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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