XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | Indium Phosphide Wafer |
| Wafer Diamter | 2 inch |
| Conduction Type | N Type |
| Grade | Test Grade |
| application | optoelectronics |
| keyword | single crystal InP Wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | Indium Phosphide Wafer | Wafer Diamter | 2 inch |
| Conduction Type | N Type | Grade | Test Grade |
| application | optoelectronics | keyword | single crystal InP Wafer |
| Brand Name | PAM-XIAMEN | Place of Origin | China |
| High Light | test grade wafer ，epi ready wafer | ||
N Type , InP(Indium Phosphide) Semiconductor Wafer , 2”, Test Grade
PAM-XIAMEN manufactures high purity single crystal Indium Phosphide Wafers for optoelectronics applications. Our standard wafer diameters range from 25.4 mm (1 inch) to 200 mm (6 inches) in size; wafers can be produced in various thicknesses and orientations with polished or unpolished sides and can include dopants. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, technical grade, and optical grade. PAM-XIAMEN also offer materials to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.
N Type, InP Wafer, 2”, Test Grade
| 2"InP Wafer Specification | ||||
| Item | Specifications | |||
| Conduction Type | N-type | N-type | ||
| Dopant | Undoped | Sulphur | ||
| Wafer Diameter | 2" | |||
| Wafer Orientation | 100±0.5° | |||
| Wafer Thickness | 350±25um | |||
| Primary Flat Length | 16±2mm | |||
| Secondary Flat Length | 8±1mm | |||
| Carrier Concentration | ≤3x1016cm-3 | (0.8-6)x1018cm-3 | (0.6-6)x1018cm-3 | N/A |
| Mobility | (3.5-4)x103cm2/V.s | (1.5-3.5)x103cm2/V.s | 50-70cm2/V.s | ＞1000cm2/V.s |
| Resistivity | N/A | N/A | N/A | ＞0.5x107Ωcm |
| EPD | <1000cm-2 | <500cm-2 | <1x103cm-2 | <5x103cm-2 |
| TTV | <10um | |||
| BOW | <10um | |||
| WARP | <12um | |||
| Laser Marking | upon request | |||
| Suface Finish | P/E, P/P | |||
| Epi Ready | yes | |||
| Package | Single wafer container or cassette | |||
What is InP wafer?
Indium phosphide is a semiconducting material similar to GaAs and silicon but is very much a niche product. It’s very effective at developing very high-speed processing and is more expensive than GaAs because of the great lengths to gather and develop the ingredients. Let’s take a look at some more facts about indium phosphide as it pertains to an InP Wafer.
Recombination Parameters
| Pure n-type material (no ~ 10-14cm-3) | |
| The longest lifetime of holes | τp ~ 3·10-6 s |
| Diffusion length Lp = (Dp·τp)1/2 | Lp ~ 40 µm. |
| Pure p-type material(po ~ 1015cm-3) | |
| (a)Low injection level | |
| The longest lifetime of electrons | τn ~ 2·10-9 s |
| Diffusion length Ln = (Dn·τn)1/2 | Ln ~ 8 µm |
| (b) High injection level (filled traps) | |
| The longest lifetime of electrons | τ ~ 10-8 s |
| Diffusion length Ln | Ln ~ 25 µm |
| Surface recombination velocity versus the heat of reaction per atom of each metal phosphide ΔHR (Rosenwaks et al. [1990]). |
If the surface Fermi level EFS is pinned close to midgap (EFS~Eg/2) the surface recombination velocity increases from ~5·10-3cm/s for doping level no~3·1015 cm-3 to ~106 cm/s for doping level no ~ 3·1018cm-3 (Bothra et al. [1991]).
| Radiative recombination coefficient (300 K) | 1.2·10-10 cm3/s |
| Auger coefficient (300 K) | ~9·10-31 cm6/s |
InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
It was used with indium gallium arsenide to make a record breaking pseudomorphic heterojunction bipolar transistor that could operate at 604 GHz.
It also has a direct bandgap, making it useful for optoelectronics devices like laser diodes. The company Infinera uses indium phosphide as its major technological material for manufacturing photonic integrated circuits for the optical telecommunications industry, to enable wavelength-division multiplexing applications.
InP is also used as a substrate for epitaxial indium gallium arsenide based opto-electronic devices.
PAM-XIAMEN is your go-to place for everything wafers, including InP wafers, as we have been doing it for almost 30 years! Enquire us today to learn more about the wafers that we offer and how we can help you with your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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