XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | Indium Phosphide InP wafer |
| Wafer Diamter | 6 inch |
| Conduction Type | N Type |
| Grade | Prime Grade |
| application | electronics |
| keyword | Prime InP Wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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Product Specification
| Payment Terms | T/T | Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days | Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | Indium Phosphide InP wafer | Wafer Diamter | 6 inch |
| Conduction Type | N Type | Grade | Prime Grade |
| application | electronics | keyword | Prime InP Wafer |
| Brand Name | PAM-XIAMEN | Place of Origin | China |
| High Light | indium phosphide wafer ，test grade wafer | ||
N Type , Undoped Or S-Doped Indium Phosphide Wafer , 6”, Prime Grade
PAM-XIAMEN offers InP wafer – Indium Phosphide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or semi-insulating in different orientation(111)or(100).
Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus. It has a face-centered cubic (“zinc blende”) crystal structure, identical to that of GaAs and most of the III-V semiconductors.Indium phosphide can be prepared from the reaction of white phosphorus and indium iodide[clarification needed] at 400 °C.,[5] also by direct combination of the purified elements at high temperature and pressure, or by thermal decomposition of a mixture of a trialkyl indium compound and phosphide. InP is used in high-power and high-frequency electronics[citation needed] because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.
N Type, Indium Phosphide Wafer, 6”, Prime Grade
| 6"InP Wafer Specification | ||||
| Item | Specifications | |||
| Conduction Type | N-type | N-type | ||
| Dopant | Undoped | Sulphur | ||
| Wafer Diameter | 6" | |||
| Wafer Orientation | 100±0.5° | |||
| Wafer Thickness | ||||
| Primary Flat Length | ||||
| Secondary Flat Length | ||||
| Carrier Concentration | ≤3x1016cm-3 | (0.8-6)x1018cm-3 | (0.6-6)x1018cm-3 | N/A |
| Mobility | (3.5-4)x103cm2/V.s | (1.5-3.5)x103cm2/V.s | 50-70cm2/V.s | ＞1000cm2/V.s |
| Resistivity | N/A | N/A | N/A | ＞0.5x107Ω.cm |
| EPD | <1000cm-2 | <1x103cm-2 | <1x103cm-2 | <5x103cm-2 |
| TTV | ||||
| BOW | ||||
| WARP | ||||
| Laser Marking | upon request | |||
| Suface Finish | P/E, P/P | |||
| Epi Ready | yes | |||
| Package | Single wafer container or cassette | |||
InP wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.
| Pure n-type material (no ~ 10-14cm-3) | |
| The longest lifetime of holes | τp ~ 3·10-6 s |
| Diffusion length Lp = (Dp·τp)1/2 | Lp ~ 40 µm. |
| Pure p-type material(po ~ 1015cm-3) | |
| (a)Low injection level | |
| The longest lifetime of electrons | τn ~ 2·10-9 s |
| Diffusion length Ln = (Dn·τn)1/2 | Ln ~ 8 µm |
| (b) High injection level (filled traps) | |
| The longest lifetime of electrons | τ ~ 10-8 s |
| Diffusion length Ln | Ln ~ 25 µm |
| Surface recombination velocity versus the heat of reaction per atom of each metal phosphide ΔHR (Rosenwaks et al. [1990]). |
If the surface Fermi level EFS is pinned close to midgap (EFS~Eg/2) the surface recombination velocity increases from ~5·10-3cm/s for doping level no~3·1015 cm-3 to ~106 cm/s for doping level no ~ 3·1018cm-3 (Bothra et al. [1991]).
| Radiative recombination coefficient (300 K) | 1.2·10-10 cm3/s |
| Auger coefficient (300 K) | ~9·10-31 cm6/s |
Widely discussed in the LiDAR arena is the wavelength of the signal. While some players have opted for 830-to-940-nm wavelengths to take advantage of available optical components, companies (including Blackmore, Neptec, Aeye, and Luminar) are increasingly turning to longer wavelengths in the also-well-served 1550-nm wavelength band, as those wavelengths allow laser powers roughly 100 times higher to be employed without compromising public safety. Lasers with emission wavelengths longer than ≈ 1.4 μm are often called “eye-safe” because light in that wavelength range is strongly absorbed in the eye's cornea, lens and vitreous body and therefore cannot damage the sensitive retina).
• LiDAR-based sensor technology can provide a high level of object identification and classification with three-dimensional (3D) imaging techniques.
• The automotive industry will adopt a chip-based, low cost solid state LiDAR sensor technology instead of large, expensive, mechanical LiDAR systems in the future.
• For the most advanced chip-based LiDAR systems, InP will play an important role and will enable autonomous driving. (Report: Blistering Growth for Automotive Lidar, Stewart Wills). The longer eye safe wavelength is also more appropriate dealing with real world conditions like dust, fog and rain.
Are You Looking for an InP substrate?
PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InP wafers, send us enquiry today to learn more about how we can work with you to get you the InP wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!
Company Details
Business Type:
Manufacturer,Exporter,Seller
Year Established:
1990
Total Annual:
10 Million-50 Million
Employee Number:
50~100
Ecer Certification：
Active Member
Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai... Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two mai...
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