XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
Products
Manufacturer of a wide range of products which include Freestanding GaN Substrate N Type or Semi - Insulating For Rf , Power , Led And Ld,Indium Antimonide Waferas Epi - Ready Or Blank , n Type , p Type Or Semi,N Type , LEC InSb(...
MOQ: 1-10,000pcs
Price: By Case
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
MOQ: 1-10,000pcs
Price: By Case
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
MOQ: 1-10,000pcs
Price:
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| product name | N Type InSb Wafer |
| Wafer Diamter | 2” |
| Conduction Type | N Type |
| Grade | Prime Grade |
| Wafer Thickness | 50.5±0.5mm |
| keyword | InSb Indium Antimonide Wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
MOQ: 1-10,000pcs
Price: By Case
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Item | PAM-FS-GAN-50-U |
| product name | GaN Wafer |
| Conduction Type | N-type,Semi-Insulating |
| Dimension | 50.8 ±1 mm |
| Thickness | 350 ±25 μm 430±25μm |
| other name | Gallium Nitride substrate |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
MOQ: 1-10,000pcs
Price: By Case
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Item | PAM-FS-GAN-50-SI |
| product name | SI-GaN GaN Substrates |
| Conduction Type | Semi-Insulating |
| Dimension | 50.8 ±1 mm |
| Thickness | 350 ±25 μm 430±25μm |
| other name | Gallium Nitride substrate |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
MOQ: 1-10,000pcs
Price: By Case
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Item | PAM-FS-GAN-50-N |
| product name | Gallium Nitride substrate Wafer |
| Conduction Type | N-type |
| Dimension | 50.8 ±1 mm |
| Thickness | 350 ±25 μm 430±25μm |
| other name | GaN Wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
MOQ: 1-10,000pcs
Price: By Case
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Item | PAM-FS-GAN-50-U |
| product name | Freestanding GaN Substrate |
| Conduction Type | N-type |
| Dimension | 10 x 10.5 mm2 |
| Thickness | 350 ±25 µm 430±25 µm |
| other name | GaN Wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
MOQ: 1-10,000pcs
Price: By Case
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Item | PAM-FS-GAN-50-SI |
| product name | SI-GaN Freestanding GaN Substrate |
| Conduction Type | Semi-Insulating |
| Dimension | 10 x 10.5 mm2 |
| Thickness | 350 ±25 μm 430±25μm |
| other name | GaN Wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
MOQ: 1-10,000pcs
Price: By Case
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Item | PAM-FS-GAN-50-N |
| product name | N-GaN Freestanding GaN Substrate |
| Conduction Type | N type |
| Dimension | 10 x 10.5 mm2 |
| Thickness | 350 ±25 μm 430±25μm |
| other name | GaN Wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
MOQ: 1-10,000pcs
Price: By Case
| Payment Terms | T/T |
| Supply Ability | 10,000 wafers/month |
| Delivery Time | 5-50 working days |
| Packaging Details | Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere |
| Item | PAM-FS-GAN A-U |
| product name | U-GaN Freestanding GaN Substrate |
| Conduction Type | N type |
| Dimension | 5 x 10 mm2 |
| Thickness | 350 ±25 μm 430±25μm |
| other name | GaN Wafer |
| Brand Name | PAM-XIAMEN |
| Place of Origin | China |
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