XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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Xiamen Powerway Advanced Material Co.,Limited(PAM-XIAMEN) is a high-tech enterprise for compound semiconductor material integrating semiconductor crystal growth, process development and epitaxy, specializing in the research and production of compound semiconductor wafers, there are two main field: SiC&GaN material(SiC wafer and epitaxy, GaN wafer and epi wafer) and III-V material (III-V substrate and epi service: InP wafer, GaSb wafer, GaAs wafer, InAs wafer and InSb wafer). Our wafers are widely used in LED semiconductor lighting,wireless communication, solar power, infrared device, laser, detectors and semiconductor power devices, including power devices, high temperature devices and photoelectric devices, therein, GaN wafer including GaN on Si,GaN on SiC and GaN on Sapphire are for Mini / micro LED, power electronics and microwave RF.
As a leading professional company, we are committed to constantly improving the quality of existing products. PAM-XIAMEN has a strong technical R & D team, composed of graduate students, doctors, masters, and has a strong R & D strength. The technical backbone of the company has been engaged in material preparation and related equipment design and development for almost 30years, and has in-depth research on the physical, chemical and electrical properties of materials, material preparation process. The accumulation of many years of theoretical deposition and practical experience of scientific and technological personnel makes the company have unique insights and unique advantages in the development of relevant materials and equipment, while ensuring that the product performance and equipment design scheme of the company meet the actual technical and technological needs of users.
| Company Name: | XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
| Business Type: | Manufacturer,Exporter,Seller |
| Brands: | POWERWAY |
| Employee Number: | 50~100 |
| Year Established: | 1990 |
| Total Sales Annual: | 10 Million-50 Million |
| Company Location: | #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China |
| Factory Location: | 26-32#, Liamei Rd. Lianhua Industrial Area, Tong an, Xiamen 361100, China |
| Company slogan: | XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
| OEM Overview: | PAM-XIAMEN accept OEM or ODM order under NDA agreement, normally for epi serice, custom design is much often, as researchers and end users prefer to solve a fixed problem and they need to adjust design to adopt these fixed device. |
| Production Line: | In 2008,The 2 inch silicon carbide wafer production line has successfully completed the technical debugging, now it realize the R & D and manufacturing of 6 inch SiC wafers for SBD, pin, MOSFET and other devices.
PAM-XIAMEN has internationally advanced MOCVD epitaxial furnace and epitaxial characterization equipment, 6-inch compound semiconductor chip production line, wafer in chip detection system, reliability testing system and application development system.: gallium nitride (GAN) semiconductor substrate materials, GaN / AI2O3 composite substrate, GaN single crystal substrate and hydride vapor phase epitaxy equipment (HVPE), etc. the monthly production capacity of 150 mm GaN on Si epitaxial wafers reaches 800wafers, and 4-8 inch GaN on SiC/sapphire epitaxial wafers have been successfully produced. The epitaxial wafer maintains the high crystal quality, high uniformity and high reliability of epitaxial materials, which can fully meet the application requirements of high-voltage power electronic devices in the industry.
PAM-XIAMEN has been on mass production of 6-inch 650 V silicon-based GaN epitaxial wafers for power electronics, which are mainly used in power management, solar inverter, electric vehicle and industrial motor drive and other fields. In the field of microwave and radio frequency, the company has carried out the development of silicon-based gallium nitride epitaxial materials, the R & D and industrial preparation of radio-frequency wafers have also been launched.
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| R&D: | R&D team, who is focusing on research and development and applied research (compared with basic research). Different from technology department, who is to solve difficult problems in production, R & D department is to research and develop new wafers, furthermore, the task of R&D to develop larger ingots, bigger wafer size but smaller defects and BOW etc. |
| Our Team: | Production team, who are responsible for controlling the whole production line from growth of ingot to packing. Technology team, who are from production dept, always offer technology support from enquiry to after sales. Sales&marketing team, who are responsible for marketing and sell products, there are sales engineers members at front end, administration members to deal with documents and shipments, website supporters. R&D team, who is focusing on research and development and applied research (compared with basic research). Purchasing team, who are responsible for buying machine, equipment and material Accounting team, who belong to head office. |
| History: | 2009, PAM-XIAMEN develop GaN technology, integrate GaN crystal substrate, epitaxy and RF& Power& LED device. It has become an integration of the R & D, design, production and sales of semiconductor materials, epitaxy, devices and modules, and connecting the whole industry chain of the third generation of semiconductors including GaN material and SiC material, incubating VCSEL, power electronic devices, compound semiconductor RF devices, lamp packaging modules Laser packaging module and other international cutting-edge technologies.
2007, PAM-XIAMEN offer epi service based on III-V substrate (including GaAs substrate, GaSb substrate, InSb substrate,InAs substrate and InP substrate,GaN substrate, AlN substrate), material covers GaInSb,InAs,AlSb,GaInNasSb,InGaAs,AlGaAs,InGaAsP,AlInGaAs,GaAlAs,InGaAlP,AlGaInP,InGaP, InGaN, AlGaN, application includes Power &RF, Photonics, LED, solar cell and Electronics.
2004, PAM-XIAMEN offers semiconductor SiC wafers with 6H SiC and 4H SiC wafer in different quality grades for researcher and industry manufacturers. We has developed whole production line with SiC crystal growth technology and SiC wafer processing technology,size from 2” to 6”. We provide custom thin film (silicon carbide)SiC epitaxy on 6H or 4H substrates for the development of silicon carbide devices. SiC epi wafer is mainly used for Schottky diodes, metal-oxide semiconductor field-effect transistors, junction field effect. From 2001, we develop and produce Germanium material including Germanium wafer which is for micro-electronics, optical application and solar cell.
From 1990, we devote to research and produce CZ silicon wafer and ingot, after a decade, we develop FZ silicon wafer with >1000 ohm.cm. and now we can offer wafer size from 2” to 12” with prime grade and test grade. |
| Service: | PAM-XIAMEN offer wafer technology consultant service with our 29+ experience in semiconductor material, we know how to connect knowledge from substrate, epitaxy to device, and we know how to choose or grow the right and qualified substrate for you when you use it for expitaxy or other application, we also know how to adjust wafer structure for different device.
PAM-XIAMEN offer qualified semiconductor wafer and wafer technology consultant service with our 29+ experience in semiconductor material from front end to back end, we know how to connect knowledge from substrate, epitaxy to device, and we know how to choose or grow the right and qualified substrate for you when you use it for expitaxy or other application, we also know how to adjust wafer structure for different device and grow the right structures for you. |
| Market name: | North America,South America,Western Europe,Eastern Europe,Eastern Asia,Southeast Asia,Middle East,Africa,Oceania,Worldwide |
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