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2Inch Sic Silicon Carbide Substrate 3C-N Type 50.8mm Diameter Production Grade

China 2Inch Sic Silicon Carbide Substrate 3C-N Type 50.8mm Diameter Production Grade

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2Inch Sic Silicon Carbide Substrate 3C-N Type 50.8mm Diameter Production Grade

MOQ： 10pc
Price： By case
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Payment Terms	T/T
Supply Ability	1000pc/month
Delivery Time	in 30days
Packaging Details	customzied plastic box
Size	2Inch
Dielectric Constant	9.7
Surface Hardness	HV0.3>2500
Density	3.21 G/cm3
Thermal Expansion Coefficient	4.5 X 10-6/K
Tensile Strength	>400MPa
Breakdown Voltage	5.5 MV/cm
Applications	Power Electronics, Sensor
Brand Name	ZMSH
Model Number	3C-N SiC
Certification	rohs
Place of Origin	CHINA

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Product Details
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Product Specification


Payment Terms	T/T	Supply Ability	1000pc/month
Delivery Time	in 30days	Packaging Details	customzied plastic box
Size	2Inch	Dielectric Constant	9.7
Surface Hardness	HV0.3>2500	Density	3.21 G/cm3
Thermal Expansion Coefficient	4.5 X 10-6/K	Tensile Strength	>400MPa
Breakdown Voltage	5.5 MV/cm	Applications	Power Electronics, Sensor
Brand Name	ZMSH	Model Number	3C-N SiC
Certification	rohs	Place of Origin	CHINA
High Light	50.8mm Sic Silicon Carbide Substrate ，Research Grade Sic Silicon Carbide Substrate

Product Description:

2Inch Sic Silicon Carbide Substrate 3C-N Type 50.8mm Diameter Production Grade Research Grade Dummy Grade

3C-SiC (Cubic Silicon Carbide) is a wide bandgap semiconductor material with good electrical and thermal properties, especially suitable for high-frequency, high-power and electronic device applications. N-type doping is usually achieved by introducing elements such as nitrogen (N) and phosphorus (P), which makes the material electronegative and suitable for a variety of electronic device designs. The bandgap is approximately 3.0 eV, making it suitable for high temperature and high voltage applications. N-type doping still maintains high electron mobility, which enhances the performance of the device. Excellent thermal conductivity helps to improve the heat dissipation ability of power devices. It has good mechanical strength and is suitable for use in harsh environments. It has good resistance to a wide range of chemicals and is suitable for industrial applications. In power electronics, it is used in high-efficiency power converters and drives, suitable for electric vehicles and renewable energy systems.

Features:

· Wide bandgap: Bandgap of approximately 3.0 eV for high temperature and high voltage applications.

· High Electron Mobility: N-type doping provides good electron mobility and enhances the overall performance of the device.

· Excellent thermal conductivity: It has excellent thermal conductivity and effectively improves heat dissipation performance, suitable for high-power applications.

· Good mechanical strength: It has high toughness and compressive strength, and is suitable for use in harsh environments.

· Chemical resistance: Good resistance to a wide range of chemicals, enhancing the stability of the material.

· Adjustable electrical characteristics: By adjusting the doping concentration, different electrical properties can be achieved to meet the needs of a variety of applications.

Technical Parameters:

Applications:

1. Power electronics: for high-efficiency power converters, inverters and drives, widely used in electric vehicles and renewable energy systems.

2. RF & Microwave Equipment: RF amplifiers, microwave equipment, especially suitable for communication and radar systems.

3. Optoelectronics: It can be used as a building block for LEDs and light detectors, especially in blue and ultraviolet applications.

4. Sensors: Applied to a wide range of sensors in high-temperature and high-power environments, providing reliable performance.

5. Wireless Charging and Battery Management: Used in wireless charging systems and battery management devices to improve efficiency and performance.

6. Industrial electrical equipment: Used in industrial automation and control systems to improve energy efficiency and system stability.

Customization:

Our SiC substrate is available in the 3C-N type and is RoHS certified. The minimum order quantity is 10pc and the price is by case. The packaging details are customized plastic boxes. The delivery time is within 30 days and we accept T/T payment terms. Our supply ability is 1000pc/month. The SiC substrate size is 2 inch. Place of origin is China.

Our services:

1. Factory direct manufacture and sell.

2. Fast, accurate quotes.

3. Reply to you within 24 working hours.

4. ODM: Customized design is avaliable.

5. Speed and precious delivery.

FAQ:
Q: What's the way of shipping and cost?
A:(1) We accept DHL, Fedex, EMS etc.
(2) If you have your own express account, it's great.If not,we could help you ship them.
Freight is in accordance with the actual settlement.

Q: Can I customize the products based on my need?
A: Yes, we can customize the material, specifications and shape, size based on your needs.

Company Details

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Year Established:

2013 
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Total Annual:

1000000-1500000
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SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

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