Silicon Carbide Wafer 6H P-Type Standard Production Grade Dia:145.5 Mm~150.0 Mm

Product Specification

Silicon Carbide Wafer 6H P-Type Standard Production Grade Dia:145.5 mm~150.0 mm thickness 350 μm ± 25 μm

6H P-Type Silicon Carbide wafer‘s abstract

This paper presents the development and characteristics of a 6H silicon carbide (SiC) wafer, which is P-type and manufactured to standard production grade. The wafer exhibits a diameter range between 145.5 mm and 150.0 mm, with a controlled thickness of 350 μm ± 25 μm. Due to its high thermal conductivity, wide bandgap, and excellent resistance to high voltages and temperatures, 6H SiC wafers are highly suitable for applications in power electronics, high-frequency devices, and harsh environments. This study focuses on the manufacturing process, material properties, and performance benchmarks, providing insight into its potential for commercial semiconductor applications.

6H P-Type Silicon Carbide wafer‘s properties

The 6H P-Type Standard Production Grade Silicon Carbide (SiC) wafer has the following properties:

• Crystal Structure: 6H SiC has a hexagonal crystal structure, offering excellent electronic properties, particularly suitable for high-frequency and high-voltage applications.
• Type: P-type (doped with elements like aluminum or boron), providing high electrical conductivity, ideal for power devices and high-speed switching applications.
• Diameter: The wafer diameter ranges from 145.5 mm to 150.0 mm, suitable for common power device packaging and handling requirements.
• Thickness: The wafer thickness is controlled at 350 μm ± 25 μm, ensuring sufficient mechanical strength during production while meeting the requirements for thin wafers in high-performance power device manufacturing.
• Thermal Conductivity: SiC materials possess high thermal conductivity, allowing efficient heat dissipation, making them ideal for high-temperature applications.
• Wide Bandgap: 6H SiC has a wide bandgap (~3.0 eV), enabling it to handle high voltages and operate at elevated temperatures, suitable for high-voltage power electronics and high-frequency electronic devices.
• High-Temperature Resistance: Silicon carbide wafers exhibit excellent physical and chemical stability in high-temperature environments, making them well-suited for electronic devices in extreme conditions.
• Radiation Resistance: SiC materials are highly resistant to radiation, making them suitable for aerospace and military applications.

These properties make the 6H P-Type SiC wafer an ideal material for high-power, high-frequency, and high-temperature electronic devices, widely used in power electronics, semiconductor devices, radar, and communication systems.

6H P-Type Silicon Carbide wafer‘s data chart

6 inch diameter Silicon Carbide (SiC) Substrate Specification

Orientation of SiC substrate

6H P-Type Silicon Carbide wafer‘s photo

6H P-Type Silicon Carbide wafer‘s application

The 6H P-Type Silicon Carbide (SiC) wafer has several important applications due to its unique material properties, making it suitable for high-performance electronics and extreme conditions. Key applications include:

1. Power Electronics: SiC wafers are widely used in power electronic devices such as MOSFETs, diodes, and thyristors. These devices are crucial for high-voltage, high-efficiency applications such as inverters, converters, and motor drives, especially in renewable energy systems, electric vehicles (EVs), and industrial equipment.

2. High-Temperature Electronics: Due to the high thermal stability of 6H SiC, it is ideal for devices that operate in extreme temperatures, such as sensors, power supplies, and control systems for aerospace, automotive, and industrial applications.

3. High-Frequency Devices: SiC's wide bandgap makes it suitable for RF (radio frequency) and microwave applications. It's used in radar systems, satellite communication, and wireless communication infrastructure for high-frequency, high-power amplifiers and switches.

4. Electric Vehicles (EVs): SiC wafers are used in power converters, inverters, and charging systems in electric vehicles, contributing to improved efficiency, faster charging, and extended driving range due to lower energy losses compared to traditional silicon devices.

5. Aerospace and Defense: SiC’s resistance to radiation and high temperatures makes it an excellent material for applications in space exploration, satellite systems, and military electronics. It is used in high-power amplifiers, transmitters, and sensors for extreme environments.

6. Renewable Energy Systems: SiC-based devices are essential in renewable energy applications, such as solar power inverters and wind energy systems, due to their high efficiency and ability to handle high voltages and temperatures, reducing energy losses and improving overall system performance.

7. High-Power Switching Devices: SiC wafers are used to manufacture high-power semiconductor switches that are used in industrial power grids, where efficiency and the ability to operate under high current and voltage conditions are crucial.

8. LEDs and Optoelectronics: SiC is used as a substrate for LED manufacturing, especially for high-brightness and high-power LEDs, as well as optoelectronic devices used in sensors and optical communication systems.

These applications benefit from the 6H P-Type SiC wafer’s ability to handle high voltages, operate in extreme temperatures, and provide excellent thermal conductivity and high-frequency performance, making it a critical material for advanced electronics.

Q&A 

Q:What is the difference between 4H and 6H silicon carbide?

A:The primary difference between 4H and 6H Silicon Carbide (SiC) lies in their crystal structures, which significantly impact their electronic and physical properties.

1. Crystal Structure:
   4H and 6H refer to different polytypes of SiC, characterized by variations in their stacking sequences. The "H" denotes the hexagonal crystal structure, and the number (4 or 6) indicates the number of Si-C bilayers in a unit cell.

   • 4H-SiC has four bilayers in its stacking sequence.
   • 6H-SiC has six bilayers in its stacking sequence.

2. Electron Mobility:
   One of the most significant differences is in their electron mobility, which affects their efficiency in electronic devices.

   • 4H-SiC offers higher electron mobility (around 900 cm²/Vs), making it more suitable for high-power and high-frequency devices.
   • 6H-SiC has lower electron mobility (around 400 cm²/Vs), which limits its efficiency in some applications.

3. Bandgap:
   Both 4H and 6H SiC have wide bandgaps, but 4H-SiC has a slightly larger bandgap (3.26 eV) compared to 6H-SiC (3.0 eV). This makes 4H-SiC more suitable for high-voltage and high-temperature applications.

4. Commercial Use:
   Due to its superior electron mobility and larger bandgap, 4H-SiC is the preferred polytype for power devices, especially in high-voltage and high-efficiency applications such as electric vehicles, solar inverters, and industrial electronics.
   6H-SiC, while still used, is generally less favored for power electronics but may be found in lower-performance applications or where the difference in mobility is not as critical.

In summary, 4H-SiC is generally considered better for high-performance power electronics due to its superior electron mobility and larger bandgap, while 6H-SiC has more limited use in comparison.