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SHANGHAI FAMOUS TRADE CO.,LTD

  • China,Shanghai ,Shanghai
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China N-GaAs Substrate VCSEL Epiwafer 6 Inch Gallium Arsenide Wafer 2 Inch <100> <110>
China N-GaAs Substrate VCSEL Epiwafer 6 Inch Gallium Arsenide Wafer 2 Inch <100> <110>

  1. China N-GaAs Substrate VCSEL Epiwafer 6 Inch Gallium Arsenide Wafer 2 Inch <100> <110>
  2. China N-GaAs Substrate VCSEL Epiwafer 6 Inch Gallium Arsenide Wafer 2 Inch <100> <110>
  3. China N-GaAs Substrate VCSEL Epiwafer 6 Inch Gallium Arsenide Wafer 2 Inch <100> <110>

N-GaAs Substrate VCSEL Epiwafer 6 Inch Gallium Arsenide Wafer 2 Inch <100> <110>

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Payment Terms T/T
Delivery Time 2-4 weeks
Material Gallium Arsenide
Size 2inch
Thickness 430um
Orientation <111> <110>
Type N type
Cavity mode Uniformity ≤ 1%
Brand Name ZMSH
Model Number N-GaAs Substrate
Place of Origin China

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  1. Product Details
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Product Specification

Payment Terms T/T Delivery Time 2-4 weeks
Material Gallium Arsenide Size 2inch
Thickness 430um Orientation <111> <110>
Type N type Cavity mode Uniformity ≤ 1%
Brand Name ZMSH Model Number N-GaAs Substrate
Place of Origin China
High Light 2 inch Gallium Arsenide WaferN-GaAs substrate VCSEL epiwafer6 inch Gallium Arsenide Wafer

2inch N-Gallium Arsenide Substrate, N-GaAs VCSEL Epitaxial Wafer, Semiconductor epitaxial wafer, 2inch N-GaAs Substrate, GaAs single crystal wafer ​2inch 3inch 4inch N-GaAs substrates, semiconductor wafer, N-Gallium Arsenide Laser Epitaxial Wafer
 


 

Features of N-GaAs Substrate
 

 
- use GaAs substrates to manufature
 
- support customized ones with design artwork
 
- direct bandgap, emits light efficiently, used in lasers.
 
- in the wavelength range of 0.7μm to 0.9μm, quantum well structures
 
- using techniques such as MOCVD or MBE, etching, metallization, and packaging to achieve the final form of the device
 


 
Description of N-GaAs Substrate
VCSEL (Vertical Cavity Surface Emitting Laser) epitaxial wafers based on N-GaAs (n-type gallium arsenide) substrates are a key optoelectronic material widely used in the fields of lasers and optical communications.
The N-GaAs substrate is composed of gallium (Ga) and arsenic (As), and uses n-type doping technology to increase the concentration of free electrons, thereby improving conductivity and electron mobility.
This material has an energy bandwidth of about 1.42 eV, which is suitable for laser emission and has excellent optoelectronic properties.
 
The structure of VCSEL usually includes multiple quantum wells and reflector layers, which are grown on the N-GaAs substrate to form an efficient laser cavity.
The quantum well layer is responsible for exciting and emitting lasers, while the reflector enhances the output efficiency of the laser.
The excellent thermal stability and electrical properties of the N-GaAs substrate ensure the high performance and stability of the VCSEL, making it perform well in high-speed data transmission.
 
 
VCSELs based on N-GaAs substrates are widely used in fields such as optical fiber communications, laser printers, and sensors.
Its high efficiency and low power consumption make it an important part of modern communication technology.
With the increasing demand for high-speed data transmission, VCSEL technology based on N-GaAs substrate is gradually becoming an important direction for the development of optoelectronics, promoting the progress and innovation of various applications.


 
Details of N-GaAs Substrate
 

 

Parameter VCSEL
rate 25G/50G
wavelength 850nm
size 4inch/6inch
Cavity mode Tolerance Within ±3%
Cavity mode Uniformity ≤1%
Doping level Tolerance Within ±30%
Doping level Uniformity ≤10%
PL Wavelength Uniformity Std.Dev better than 2nm @inner 140mm
Thickness Uniformity Better than ±3% @inner 140mm
Mole fraction x Tolerance Within ±0.03
Mole fraction x Uniformity ≤0.03

 

More samples of N-GaAs Substrate

*If you have the customized requirements, please feel free to contact us.


 

About us
About us
Our enterprise, ZMSH, specialises in the research, production, processing, and sales of Semiconductor substrates and optical crystal materials.
We have an experienced engineering team, management expertise, precision processing equipment, and testing instruments, providing us with extremely strong capabilities in processing non-standard products.
We can research, develop, and design various new products according to customer needs.
The company will adhere to the principle of "customer-centred, quality-based" and strive to become a top-tier high-tech enterprise in the field of optoelectronic materials.
 

 
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FAQ
1. Q: What about the cost N-GaAs substrates compared with other substrates ?
A: N-GaAs substrates tend to be more expensive than silicon substrates and some other semiconductor materials.
 
2. Q: What about the future prospect of N-GaAs substrates?
A: The future prospects of
 N-GaAs substrates are quite promising.

 

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

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Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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