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SHANGHAI FAMOUS TRADE CO.,LTD

  • China,Shanghai ,Shanghai
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China 4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade
China 4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade

  1. China 4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade
  2. China 4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade
  3. China 4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade
  4. China 4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade

4H-SEMI Silicon Carbide SiC Substrate 2 Inch Thickness 350um 500um Prime Grade

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Payment Terms T/T
Delivery Time 2-4 weeks
Material SiC Single Crystal
Dia 50.8 mm ± 0.38 mm
Grade P grade or D grade
Thickness 350 um or 500 um
Orientation On axis: <0001> +/- 0.5 deg
Resistivity ≥1E5 Ω·cm
Brand Name ZMSH
Model Number SiC Substrate
Place of Origin China

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Product Specification

Payment Terms T/T Delivery Time 2-4 weeks
Material SiC Single Crystal Dia 50.8 mm ± 0.38 mm
Grade P grade or D grade Thickness 350 um or 500 um
Orientation On axis: <0001> +/- 0.5 deg Resistivity ≥1E5 Ω·cm
Brand Name ZMSH Model Number SiC Substrate
Place of Origin China
High Light 500um SiC SubstrateP grade SiC Substrate2 inch SiC Substrate

SiC wafer, Silicon Carbide Wafer, SiC Substrate, Silicon Carbide Substrate, P Grade, D Grade, 2inch SiC, 4inch SiC, 6inch SiC, 8inch SiC, 12inch SiC, 4H-N, 4H-SEMI, 6H-N, HPSI type


About 4H-SEMI SiC

 

  • use SIC Monocrystal to make

 

  • support customized ones with design artwork

 

  • high-quality, suitable for high-performance applications

 

  • high hardness, about 9.2 Mohs

 

  • widely used in high-tech areas, like power electronics, automotive electronics and RF devices


Description of 4H-SEMI SiC

 

Silicon Carbide (SiC) is a versatile semiconductor renowned for its performance in high-power and high-frequency applications.

Its wide bandgap enables efficient operation at high voltages and temperatures, making it suitable for power electronics, RF devices, and harsh environments.

 

SiC is integral to industries such as automotive and energy due to its reliability and efficiency.

Advanced manufacturing methods, like Chemical Vapor Deposition (CVD) and Physical Vapor Transport (PVT), ensure high-quality, durable components.

 

 

SiC's unique properties also make it ideal for short-wavelength optoelectronics, high-temperature environments, radiation resistance, and demanding electronic systems.

ZMSH offers a range of SiC wafers, including 6H and 4H types, no matter N type, SEMI type or HPSI type, ensuring high quality, stable supply, and cost-effectiveness through large-scale production processes.


 

Features of 4H-SEMI SiC

 

4-inch Diameter 4H Semi-insulating Silicon Carbide Substrate Specification
SUBSTRATE PROPERTY Production Grade Dummy Grade
Diameter 50.8.0 mm +0.0/-0.38 mm
Surface Orientation on-axis: {0001} ± 0.2°
Primary Flat Orientation <11-20> ± 5.0˚
Secondary Flat Orientation 90.0˚ CW from Primary ± 5.0˚, silicon face up
Primary Flat Length 32.5 mm ± 2.0 mm
Secondary Flat Length 18.0 mm ± 2.0 mm
Wafer Edge Chamfer
Micropipe Density ≤5 micropipes/cm2 ≤50 micropipes/cm2
Polytype Areas by High-Intensity Light None permitted ≤10% area
Resistivity 0.015~0.028Ω·cm (area 75%)
0.015~0.028Ω·cm
Thickness 350.0 μm ± 25.0 μm or 500.0 μm ± 25.0 μm
TTV ≤10 μm ≤15 μm
BOW (absolute value) ≤25 μm ≤30 μm
Warp ≤45 μm
Surface Finish Double Side Polish, Si Face CMP (chemical polishing)
Surface Roughness CMP Si Face Ra≤0.5 nm N/A
Cracks by high-intensity light None permitted
Edge Chips/Indents by Diffuse Lighting None permitted Qty.2 <1.0 mm width and depth
Total Usable Area ≥90% N/A
Note: Customerized specifications other than the above parameters are acceptable.

 

 

More samples of 4H-SEMI SiC

*Please feel free to contact us if you have customized demands.

 

 

Similar product recommendations

1.4Inch 4H-N Silicon Carbide SiC Substrate Dia 100mm N type P grade D grade Thickness 350um Customized

2.4H-N Silicon Carbide SiC Substrate 8 inch Thickness 350um 500um P grade D grade SiC wafer

 

FAQ

1. QHow does 4H-SiC Semi ensure the quality of its wafers?

    A: 4H-SiC Semi employs advanced manufacturing techniques, including Chemical Vapor Deposition (CVD) and Physical Vapor Transport (PVT), and follows stringent quality control processes to ensure high-quality wafers.

 

2. Q: What's the main difference between 4H-N SiC and 4H-SEMI SiC

    A: The primary difference between 4H-N SiC and 4H-SEMI SiC is that 4H-N SiC (Nitrogen-doped) is n-type semiconductor silicon carbide, whereas 4H-Semi SiC is semi-insulating silicon carbide, which has been processed to have very high resistivity.

Company Details

Bronze Gleitlager

,

Bronze Sleeve Bushings

 and 

Graphite Plugged Bushings

 from Quality China Factory
  • Business Type:

    Manufacturer,Agent,Importer,Exporter,Trading Company

  • Year Established:

    2013

  • Total Annual:

    1000000-1500000

  • Ecer Certification:

    Verified Supplier

    SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...     SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014.    We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...

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Get in touch with us

  • Reach Us
  • SHANGHAI FAMOUS TRADE CO.,LTD
  • Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799
  • https://www.galliumnitridewafer.com/

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