SHANGHAI FAMOUS TRADE CO.,LTD
| Payment Terms | T/T |
| Delivery Time | 5-10months |
| Bonding Methods: | Room Temperature Bonding |
| Compatible Wafer Sizes: | ≤12 Inch, Compatible With Irregular Shaped Samples |
| Compatible Materials: | Sapphire, InP, SiC, GaAs, GaN, Diamond, Glass, Etc |
| Max Pressure Of Press System: | 100 KN |
| Alignment Method & Precision: | Edge alignment accuracy: ≤±50 μm; Mark alignment accuracy: ≤±2 μm |
| Bonding Strength: | ≥2.0 J/m² @ room temperature (for Si-Si direct bonding) |
| Brand Name | ZMSH |
| Model Number | Wafer Bonding Equipment |
| Certification | rohs |
| Place of Origin | CHINA |
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Product Specification
| Payment Terms | T/T | Delivery Time | 5-10months |
| Bonding Methods: | Room Temperature Bonding | Compatible Wafer Sizes: | ≤12 Inch, Compatible With Irregular Shaped Samples |
| Compatible Materials: | Sapphire, InP, SiC, GaAs, GaN, Diamond, Glass, Etc | Max Pressure Of Press System: | 100 KN |
| Alignment Method & Precision: | Edge alignment accuracy: ≤±50 μm; Mark alignment accuracy: ≤±2 μm | Bonding Strength: | ≥2.0 J/m² @ room temperature (for Si-Si direct bonding) |
| Brand Name | ZMSH | Model Number | Wafer Bonding Equipment |
| Certification | rohs | Place of Origin | CHINA |
| High Light | Room Temperature Wafer Bonding Equipment ，Hydrophilic Wafer Bonding Equipment | ||
Wafer Bonding Equipment Room Temperature Bondin Hydrophilic Bonding Si-SiC Si-Si Bonding 2 -12 inch
Wafer Bonding System Overview
This system is a high-end bonding equipment specifically designed for silicon carbide (SiC) power device manufacturing, supporting 2 to 12-inch wafer specifications. The system incorporates advanced room-temperature direct bonding and surface-activated bonding technologies, with special optimization for SiC-SiC and SiC-Si heterogeneous bonding processes. Featuring an integrated high-precision optical alignment system (≤±2 μm) and closed-loop temperature/pressure control, it ensures the high bonding strength (≥2 J/m²) and superior interface uniformity required for power semiconductor device fabrication.
Wafer Bonding System Technical Specifications
Core Functional Parameters:
| Bonding Processes: | Supports direct bonding and plasma-activated bonding |
| Wafer Compatibility: | Full-range 2"-12" wafer handling |
| Material Combinations: | Si-SiC/SiC-SiC heterostructure bonding |
| Alignment System: | Ultra-high precision optical alignment (≤±0.5 μm) |
| Pressure Control: | Precision adjustable 0-10 MPa |
| Temperature Range: | RT-500°C (optional preheat/annealing module) |
| Vacuum Level: | Ultra-high vacuum environment (≤5×10⁻⁶ Torr) |
Intelligent Control System:
· Industrial-grade touch HMI
· ≥50 stored process recipes
· Real-time pressure-temperature closed-loop feedback
Safety Protection System:
· Triple interlock protection (pressure/temperature/vacuum)
· Emergency braking system
· Class 100 cleanroom compatibility
Extended Functions:
· Optional robotic wafer handling
· SECS/GEM communication protocol support
· Integrated inline inspection module
This system is specifically designed for R&D and mass production of third-generation semiconductors. Its modular architecture enables high-reliability bonding for SiC-based power devices. The innovative plasma pretreatment technology significantly enhances interfacial bonding strength (≥5 J/m²), while the ultra-high vacuum environment ensures contaminant-free bonding interfaces. The intelligent temperature-pressure control system, combined with submicron alignment accuracy, provides wafer-level bonding solutions for HEMT, SBD and other devices.
Photo
Compatible Materials
Applications
· MEMS Device Packaging: Suitable for hermetic sealing of microelectromechanical systems (MEMS) such as accelerometers and gyroscopes.
· CIS Image Sensors: Enables low-temperature bonding between CMOS wafers and optical glass substrates.
· 3D IC Integration: Supports room-temperature stacking bonding for through-silicon via (TSV) wafers.
· Compound Semiconductor Devices: Facilitates epitaxial layer transfer for GaN/SiC power devices.
· Biochip Fabrication: Provides low-temperature packaging solutions for microfluidic chips.
Machining effect——Bonding of LiNbO 3 wafer and SiC wafer
( (a) Photograph of LiNbO3/SiC wafers bonded at room temperature. (b) Photograph of diced 1 × 1 mm chips. )
( (a) Cross-sectional TEM image of the LiNbO₃/SiC bonding interface (b) Magnified view of (a) )
Q&A
1. Q: What are the advantages of room-temperature wafer bonding compared to thermal bonding?
A: Room-temperature bonding prevents thermal stress and material degradation, enabling direct bonding of dissimilar materials (e.g., SiC-LiNbO₃) without high-temperature limitations.
2. Q: Which materials can be bonded using room-temperature wafer bonding technology?
A: It supports bonding of semiconductors (Si, SiC, GaN), oxides (LiNbO₃, SiO₂), and metals (Cu, Au), ideal for MEMS, 3D ICs, and optoelectronic integration.
Tag: #Wafer Bonding Equipment, #SIC, #2/4/6/8/10/12 inch Bonding, #Room Temperature Bonding System, # Si-SiC , # Si-Si, #LiNbO 3 -SiC
Company Details
Business Type:
Manufacturer,Agent,Importer,Exporter,Trading Company
Year Established:
2013
Total Annual:
1000000-1500000
Ecer Certification：
Verified Supplier
SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi... SHANGHAI FAMOUS TRADE CO.,LTD. locates in the city of Shanghai, Which is the best city of China, and our factory is founded in Wuxi city in 2014. We specialize in processing a varity of materials into wafers, substrates and custiomized optical glass parts.components wi...
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